Fabrication of quantum dot lasers

量子点激光器的制造

• 批准号: 10355004
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 21.57万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10355004/
• 关键词: Quantum dots; MOCVD; MBE; Semicondcutor lasers; Self-assembling growth; GaN; Quantum effects; InAs; 半導体; ナノ構造

This project is organized to establish device technologies aiming at bringing the quantum dot lasers into commercial market in thenear future.We succeeded in optimizing self-assembled InAs quantum dots at the wavelength range from 1.3 -1.5 mm which is very important for optical communication applications. Finally 1.52 mm wavelength light emission was achieved by embedding InAs quantum dots not by GaAs but by InGaAs to suppress strain effects. In addition, quantum dot laser structures involving photonic crystals by developing selective era growth technique.We have shown theoretically improvement ratio by introducing quantum dots in GaN-bases systems is much bigger than that in GaAs systems. In addition we established growth condition for blue light emitting GaN-based quantum dot for laser applications. Finally we succeeded in operating InGaN quantum dot lasers at room temperature by optical pumping method. We also show GaN quantum dots on A1N for UV laser applications.In summary, we have succeeded in fabricating quantum dot lasers and establishing material growth technology for future photonic network IT technologies.

该项目旨在建立器件技术，旨在在不久的将来将量子点激光器推向商业市场。我们成功地在1.3 -1.5 mm波长范围内优化了自组装InAs量子点，这对于光通信应用非常重要。最后，通过嵌入 InAs 量子点而不是 GaAs 而是通过 InGaAs 嵌入来抑制应变效应，实现了 1.52 mm 波长的发光。此外，通过开发选择性时代生长技术，涉及光子晶体的量子点激光器结构。我们在理论上表明，在GaN基系统中引入量子点的改进率比在GaAs系统中大得多。此外，我们还建立了用于激光应用的蓝光发射 GaN 基量子点的生长条件。最终我们通过光泵浦方法成功地在室温下运行了InGaN量子点激光器。我们还展示了用于紫外激光应用的 A1N 上的 GaN 量子点。总之，我们已经成功制造了量子点激光器，并为未来的光子网络 IT 技术建立了材料生长技术。

项目成果

T.Someya, Y.Arakawa, R.Werner, A.Forchel: "Growth and structural characterization of InGaN vertical cavity surface emitting lasers operating at room temperature"Physica Status Solidi 176. 63-66 (1999)

T.Someya、Y.Arakawa、R.Werner、A.Forchel：“室温下运行的 InGaN 垂直腔表面发射激光器的生长和结构表征”Physica Status Solidi 176. 63-66 (1999)

T.Saito, Y.Arakawa: "Atomic structure and phase stability of InxGal-xN random alloys calculated using a valence-force-field method"Physical Review B. Vol.60. 1701 (1999)

T.Saito、Y.Arakawa：“使用价力场方法计算的 InxGal-xN 随机合金的原子结构和相稳定性”《物理评论 B》第 60 卷。

K.Suzuki, Y.Arakawa: "Growth of Stacked GaSb/GaAs Self-assembled Qunatum Dots by Molecular Beam Epitaxy"Journal of Crystal Growth. VOl 201/202. 1205-1208 (1999)

K.Suzuki、Y.Arakawa：“通过分子束外延生长堆叠式 GaSb/GaAs 自组装量子点”晶体生长杂志。

K.Suzuki, R.A.Hogg, Y.Arakawa: "Stractual and Optical Properties of Type II Self-assembled GaSb/GaAs Quantum Dots Grown by Molecular Beam Epitaxy"Journal of Applied Physics. vol.85. 8349-8352 (1999)

K.Suzuki、R.A.Hogg、Y.Arakawa：“分子束外延生长的 II 型自组装 GaSb/GaAs 量子点的结构和光学特性”应用物理学杂志。

Xin-Qi Li, Y.Arakawa: "Optical linewidths in an individual quantum dot"Phys. Rev. B. {\bf 6O}, 1915 (1999). (1999)

Xin-Qi Li，Y.Arakawa：“单个量子点中的光学线宽”Phys。