Development of Semiconductor Lasers with Microcavity and Quantum Wires

微腔和量子线半导体激光器的开发

• 批准号: 06555100
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 8.45万
• 依托单位: UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555100/
• 关键词: Quantum Nanostructures; MOCVD; Quantum Wires; Quantum Box; Microcavity; Lasers; Compound Semiconductors; Optical Devices; 歪構造; 半導体レーザ; 量子ドット; ステップエッジ

For the ultra-high speed optical network system with ultra-high channel capacity in the 21th century, it is indispensable to develop light sources which are suitable for high integration with both the time-axis and the spatial axis. Therefore, new type of semiconductor lasers of the next generation strongly requested to be established.In this study a strained InGaAs quantum wire laser with a vertical microcavity structures was fabricated for the first time. Quantum wires and dots are important for highly efficient semiconductor lasers. In this laser structure, quantum wires with a lateral width of about 10nm were grown by a selective metal organic chemical vapor deposition (MOCVD) technique. The length of the microcavity was 41 (1=883nm), with AlAs/AlGaAs distributed Bragg reflectors. The microcavity effect was demonstrated by the measurement of photoluminescence with and without the cavity. Lasing oscillation was observed at 77K by optical pumping.In this research program, we also investigated the microcavity quantum dot lasers. For this purpose, we first investigated fabrication technology for the InGaAs/GaAs quantum dots using the self-assembling growth technique. The size of the quantum dots is around 15nm. We succeeded in fabricating a vertical cavity quantum dot laser structures.These results are quite useful for establishing semiconductor laser technology for the 21th century.

对于21世纪具有超高通道容量的超高速光网络系统来说，开发适合时间轴和空间轴高度集成的光源是必不可少的。因此，迫切需要建立下一代新型半导体激光器。本研究首次制备了具有垂直微腔结构的应变InGaAs量子线激光器。量子线和量子点对于高效半导体激光器非常重要。在该激光器结构中，通过选择性金属有机化学气相沉积（MOCVD）技术生长横向宽度约为10nm的量子线。微腔长度为41（1=883nm），具有AlAs/AlGaAs分布布拉格反射器。通过测量有空腔和无空腔的光致发光来证明微腔效应。通过光泵浦观察到77K的激光振荡。在本研究项目中，我们还研究了微腔量子点激光器。为此，我们首先研究了使用自组装生长技术的 InGaAs/GaAs 量子点的制造技术。量子点的尺寸约为15nm。我们成功地制造了垂直腔量子点激光器结构。这些成果对于建立21世纪的半导体激光器技术非常有用。

项目成果

Y. Nagamine, T. Tanaka, T. Kono, S.Tsukamoto, M. Nishioka, Y. Arakawa, K. Uchida: "Observation of enhanced lateral confinement of excitions in GaAs auantum wires various sizes (7-30nm)by magnetopotluminescerce" Appl. Phys. Lett.66(19). 2502-2504 (1995)

Y. Nagamine、T. Tanaka、T. Kono、S.Tsukamoto、M. Nishioka、Y. Arakawa、K. Uchida：“通过磁电致发光观察不同尺寸（7-30nm）的砷化镓金线中激发的增强横向限制”

Y. Nagamine, T. Tanaka, T. Kono, S. Tsukamoto, M. Nishioka, Y. Arakawa, K. Uchida: "Observation of enhanced lateral confinement of excitions in GaAs quantum wires various sizes(7-30nm)by magnetophotluminescerce" Appl. Phys. Lett. 66(19). 2502-2504 (1995)

Y. Nagamine、T. Tanaka、T. Kono、S. Tsukamoto、M. Nishioka、Y. Arakawa、K. Uchida：“通过磁光发光观察不同尺寸（7-30nm）GaAs量子线中激发的增强横向限制”

Y.Nagamine, H.Watabe, M.Nishioka, and Y.Arakawa: ""Observation of a single photoluminescence peak from a single quantum dot"" Appl.Phys.Lett.67 (22). 3257-3259 (1995)

Y.Nagamine、H.Watabe、M.Nishioka 和 Y.Arakawa：“观察单个量子点的单个光致发光峰”Appl.Phys.Lett.67 (22)。

Y.Arakawa et al: ""Plenum Pubishing Corporation"" Confined Electrons and Photons New Physics and Applications. 907 (1995)

Y.Arakawa 等人：““Plenum Pubishing Corporation””《受限电子和光子新物理与应用》。

Y.Nagamine, H.Watabe, F.Sogawa, and Y.Arakawa: ""One-dimentional exciton diffusion in GaAs quantum wires"" Appl.Phys.Lett.67 (11). 1535-1537 (1995)

Y.Nagamine、H.Watabe、F.Sogawa 和 Y.Arakawa：“GaAs 量子线中的一维激子扩散”Appl.Phys.Lett.67 (11)。