Basic Research on Semiconductor Lasers with Vertical Microcavity

垂直微腔半导体激光器基础研究

基本信息

批准号：
05452194
负责人：
ARAKAWA Yasuhiko
金额：
$ 4.35万
依托单位：
Institute of Industrial Science, University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452194/
关键词：
quantum wires quantum dots strained srructures MOCVD semiconductor lasers microcavities step-edges ステップエッジ

项目摘要

Various technological approaches have been performed to fabricate quantum dot structures which are potentially useful for optoelectronic device application and basic physics [1]. One of main goals is to manipulate both electrons and photons in nanostructures and microcavities. Towards this goal, it is important to develop nanofabrication and nano-scale optical characterization techniques. In this project, we investigate strained quantum wires and quantum dots for the semiconductor lasers of the next generation.First, we demonstrated spontaneous alignment of InGaAs quantum dots using multi-atomic step structures formed in MOCVD growth [6]. In this technique, first, GaAs epilayr with multi-atomic steps along straight lines was grown on vicinal GaAs substrate under appropriate growth conditions. Then the InGaAs quantum dots were grown selectively on the multi-atomic step edges using strain effects. This growth technique results in spontaneously aligned InGaAs quantum dots without any pre-processing technique prior to the growth.Second, we recently succeeded in fabricating quantum wire laser with vertical microcavity. The quantum wire laser inside the microcavity was fabricated using the selective growth technique. In the microcavity, triangular-shaped In0.3Ga0.7As strained quantum wires are grown between (111)A facets of [011]-oriented GaAs triangular prisms selectively grown on a SiO2 masked DBR mirror region. The quantum wires are comparatively strained owing to the difference of the lattice constants of GaAs and In0.3Ga0.7As. The cavity effect is confirmed by measuring photoluminescence with and without the microcavity. A much sharper photoluminescence spectral line was observed from the quantum wires with the microcavity compared to the sample without the cavity. The lasing oscillation of this sample was demonstrated at 77K,using optical pumping method.

人们已经采用了各种技术方法来制造量子点结构，这些结构对于光电器件应用和基础物理具有潜在的用途[1]。主要目标之一是操纵纳米结构和微腔中的电子和光子。为了实现这一目标，开发纳米加工和纳米级光学表征技术非常重要。在这个项目中，我们研究了下一代半导体激光器的应变量子线和量子点。首先，我们利用 MOCVD 生长中形成的多原子阶梯结构演示了 InGaAs 量子点的自发排列[6]。在该技术中，首先，在适当的生长条件下，在邻近的 GaAs 衬底上生长具有沿直线的多原子台阶的 GaAs 外延层。然后利用应变效应在多原子阶梯边缘上选择性地生长 InGaAs 量子点。这种生长技术可以产生自发排列的 InGaAs 量子点，在生长之前无需任何预处理技术。其次，我们最近成功地制造了具有垂直微腔的量子线激光器。微腔内的量子线激光器是采用选择性生长技术制造的。在微腔中，三角形的In0.3Ga0.7As应变量子线生长在[011]取向的GaAs三棱柱的(111)A面之间，选择性地生长在SiO2掩模的DBR镜区域上。由于GaAs和In0.3Ga0.7As的晶格常数不同，量子线相对应变。通过测量有和没有微腔的光致发光来证实腔效应。与没有腔的样品相比，从具有微腔的量子线观察到更清晰的光致发光谱线。利用光泵浦方法演示了该样品在77K下的激光振荡。