Basic Research on Semiconductor Lasers with Vertical Microcavity

垂直微腔半导体激光器基础研究

基本信息

批准号：
05452194
负责人：
ARAKAWA Yasuhiko
金额：
$ 4.35万
依托单位：
Institute of Industrial Science, University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452194/
关键词：
quantum wires quantum dots strained srructures MOCVD semiconductor lasers microcavities step-edges ステップエッジ

项目摘要

Various technological approaches have been performed to fabricate quantum dot structures which are potentially useful for optoelectronic device application and basic physics [1]. One of main goals is to manipulate both electrons and photons in nanostructures and microcavities. Towards this goal, it is important to develop nanofabrication and nano-scale optical characterization techniques. In this project, we investigate strained quantum wires and quantum dots for the semiconductor lasers of the next generation.First, we demonstrated spontaneous alignment of InGaAs quantum dots using multi-atomic step structures formed in MOCVD growth [6]. In this technique, first, GaAs epilayr with multi-atomic steps along straight lines was grown on vicinal GaAs substrate under appropriate growth conditions. Then the InGaAs quantum dots were grown selectively on the multi-atomic step edges using strain effects. This growth technique results in spontaneously aligned InGaAs quantum dots without any pre-processing technique prior to the growth.Second, we recently succeeded in fabricating quantum wire laser with vertical microcavity. The quantum wire laser inside the microcavity was fabricated using the selective growth technique. In the microcavity, triangular-shaped In0.3Ga0.7As strained quantum wires are grown between (111)A facets of [011]-oriented GaAs triangular prisms selectively grown on a SiO2 masked DBR mirror region. The quantum wires are comparatively strained owing to the difference of the lattice constants of GaAs and In0.3Ga0.7As. The cavity effect is confirmed by measuring photoluminescence with and without the microcavity. A much sharper photoluminescence spectral line was observed from the quantum wires with the microcavity compared to the sample without the cavity. The lasing oscillation of this sample was demonstrated at 77K,using optical pumping method.

已经采用了各种技术方法来制造量子点结构，这些量子点结构可能对光电设备应用和基本物理学有用[1]。主要目标之一是操纵纳米结构和微腔中的电子和光子。为了实现这一目标，重要的是开发纳米化和纳米级的光学特征技术。在这个项目中，我们研究了下一代的半导体激光器的紧张量子线和量子点。首先，我们使用MOCVD生长中形成的多原子步骤结构证明了INGAAS量子点的自发比对[6]。在这项技术中，首先，在适当的生长条件下，在阴道GAAS底物上生长了具有多原子步骤的GAAS Epilayr。然后使用应变效应选择性地在多原子阶梯边缘上选择性生长Ingaas量子点。这种增长技术导致自发地对齐的Ingaas量子点，而没有任何预处理技术。使用选择性生长技术制造了微腔内的量子线激光器。在微腔中，三角形IN0.3GA0.7AS应变的量子线在（111）[011]面向的GAAS GAAS三角形棱镜的一个方面选择性地在SIO2遮罩的DBR镜面区域中选择性生长。由于GAAS和IN0.3GA0.7AS的晶格常数差，量子线相对紧张。通过有或没有微腔的测量光致发光来确认腔效果。与没有空腔的样品相比，从具有微腔的量子线观察到了一条尖锐的光致发光光谱线。该样品的激光振荡使用光学抽水法以77K的形式证明。