MRI: Development of A New High Temperature Source Metalorganic Chemical Vapor Deposition System (HTS-MOCVD) for Next Generation IIIA/B-Nitrides

MRI：开发用于下一代 IIIA/B 氮化物的新型高温源金属有机化学气相沉积系统 (HTS-MOCVD)

• 批准号: 2216107
• 负责人: Asif Khan
• 金额: $ 36.42万
• 依托单位: University of South Carolina at Columbia
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-09-01 至 2024-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2216107&HistoricalAwards=false
• 关键词: MRI; Development; New; Temperature; Source

Abstract Title: Novel High Temperature Research Instrument to fabricate next generation semiconductors for Power Electronics for electric vehicles and future electric grid.Group III-Nitrides are semiconductors beyond silicon that enable unique electronic and optical devices for power chargers for laptops, cell phones and other consumer electronics, and the electronics for hybrid and electric vehicles (HEV’s). These semiconductors are also used to manufacture the green, blue, and white light emitting diodes (LED’s) for high efficiency lighting and displays for which the 2014 Nobel Prize in physics was awarded. The III-Nitride semiconductors are also at the core of ultraviolet LEDs for disinfection and air-water purification. These unique and important semiconductors materials are produced using a high temperature growth process called Metalorganic Chemical Vapor Deposition (MOCVD) that is carried out in a unique high temperature equipment to allow high quality crystalline materials with a very high purity. It has been proposed that the incorporation of transition metals, such as Titanium and Scandium can enhance the performance of these semiconductor materials for power electronics by increasing the piezoelectrically produced electrical charge by ~2-10 times. This higher charge can will enable higher current levels in HEV’s. The challenge here is to produce high quality materials, which in turn require even higher temperature growth and chemical processes, for which there are currently no commercial tools available. In this proposal, we will develop both the hardware tools, and the chemical processes, and measurement techniques required to demonstrate the potential for this new high temperature, high current, high voltage technology. This Track-I NSF MRI proposal aims to develop a New High Temperature Source-Metalorganic Chemical Vapor Deposition System (HTS-MOCVD) for depositing the emerging IIIB-Transition- Metal Nitrides (such as ScN), and conventional IIIA-Nitrides (GaN-AlN-InN) in a single growth reactor. The III-B nitrides have very high piezo-pyroelectric coefficients making them ideal for high performance sensors. Moreover, their heterojunctions with III-A nitrides can potentially yield power electronic and UVB-C optoelectronic devices with performance level well above those of current devices. Our system design will have several innovative features such as a new high temperature source design, and a new precursor injector design. This new injector design will in essence allow source injection like in conventional MOCVD reactors very close to the growth susceptor. This nclose injection mode, and the high temperature source, will enable increased precursor injection efficiency and thus growth rates for ScN compatible with those of AlxGa1-xN. The close to susceptor/substrate injection will also lead to a significant reduction in the adduct formation thereby simultaneously improving the growth quality with a growth rate much higher than conventional MOCVD systems. Thus, our unique system design will allow the growth of thicker buffer regions and the active regions (typically much thinner) of the device structures simultaneously in the same system. It will also be ideal for depositing AlxGa1-xN/AlySc1-yN heterojunctions and quantum wells to explore their properties. MOCVD systems with our high temperature source and the dual injector design are commercially not available.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

摘要标题：为电动汽车和未来电网制造下一代半导体的新型高温研究工具。集团III-硝酸盐是硅外的半导体，可为笔记本电脑，手机和其他消费电气和电动电子设备以及用于杂交电动机和电动汽车的电源和电动汽车以及电动汽车（Hevicles and and and and and and and and and and and and and and and and and）提供独特的电子和光学设备。这些半导体还用于制造绿色，蓝色和白光发射二极管（LED），以进行高效照明和2014年诺贝尔物理学奖。 III二硝酸盐半导体也是消毒和空气纯化的紫外线LED的核心。这些独特而重要的半导体材料是使用称为金属有机化学蒸气沉积（MOCVD）的高温生长过程生产的，该过程在独特的高温设备中进行，以允许具有很高纯度的高质量结晶材料。已经提出，过渡金属的遗传（例如钛和扫描岩）可以通过增加压电性产生的电荷的2-10倍来增强这些半导体材料的功率电子产品的性能。这项较高的费用可以使HEV的电流水平更高。这里的挑战是生产高质量的材料，这反过来需要更高的温度增长和化学过程，目前尚无商业工具。在此提案中，我们将开发硬件工具，化学过程以及所需的测量技术，以证明这种新的高温，高电流高压技术的潜力。该轨道INSF MRI提案旨在开发一种新的高温源 - 金属有机化学蒸气沉积系统（HTS-MOCVD），用于沉积新兴的IIIB-透射金属硝酸盐（例如SCN），以及传统的IIIA氮化物（GAN-ALN-INN）（GAN-ALN-INN）。 III-B硝酸盐具有很高的压电 - 型 - 斜方线系数，使其非常适合高性能传感器。此外，它们与III-A氮化物的异质结可能会产生功率电子和UVB-C光电设备，其性能水平远高于当前设备。我们的系统设计将具有一些创新的功能，例如新的高温源设计，以及新的前体喷射器设计。这种新的喷油器设计本质上将允许像传统的MOCVD反应器一样非常接近生长感受器。这种接近注射模式以及高温源将使前体注入效率提高，从而使SCN与Alxga1-XN兼容。接近感受器/底物注入也将导致加合物形成的大幅度减少，从而仅通过比传统MOCVD系统高得多的增长率提高增长质量。这是我们独特的系统设计将使较厚的缓冲区区域以及在同一系统中轻松的设备结构的活动区域（通常更薄）的生长。它也是沉积Alxga1-XN/Alysc1-yn异质孔和量子井的理想选择。在商业上没有具有高温和双向喷油器设计的MOCVD系统。该奖项反映了NSF的法定任务，并通过使用基金会的知识分子优点和更广泛的影响审查标准来评估被认为是宝贵的支持。