CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power Computing

职业：用于超低功耗计算的反铁电负电容晶体管

• 批准号: 2047880
• 负责人: Asif Khan
• 金额: $ 50万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-03-15 至 2026-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2047880&HistoricalAwards=false
• 关键词: CAREER; Antiferroelectric; Negative; Capacitance; Transistors

Proposal Number: 2047880Principal Investigator: Asif I KhanTitle: CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power ComputingInstitution: Georgia Institute of TechnologyNontechnical Abstract:The society is experiencing an unprecedented growth of its digital footprint—be it in the form of uploading a photo on Facebook or live-streaming a teaching module to a massive global audience in YouTube or commandeering a revolution via Twitter. This convenience of modern computing, however, comes with a steep cost in terms of energy use and environmental impact: today, the global information infrastructure, i.e., data centers, emit as much greenhouse gases as that of the state of Nevada or a country such as Netherlands or Malaysia and constitute around 1% of world-wide electricity demand. According to scientific estimates, this fraction may balloon up to 20% in the next 15-20 years. At the core of this predicament lies the fact that our cutting-edge digital hardware has long been overdue for a prime upgrade in terms of their energy efficiencies—at the level of its most fundamental, building blocks: the transistors. The proposed research aims to explore an energy-efficient transistor concept - negative capacitance field-effect transistor, which will be made using a new class of nanometer-scale materials, called the antiferroelectric oxides.Technical AbstractThe project aims at addressing the generational, global challenge of energy efficiency of information processing electronics by exploring an energy-efficient transistor concept, namely the negative capacitance field-effect transistor (NCFET). The main claim of innovation is the use of a new class of nanometer-scale materials, called the antiferroelectric oxides, to enable this transistor technology. The underlying hypothesis is that owing to a unique physical phenomenon in antiferroelectrics: the electric field-induced non-polar-to-polar phase transition, antiferroelectric NCFETs can lead to a reduction of the energy in transistors below the fundamental, thermodynamic limit, much more than that is allowable in their conventional counterparts: ferroelectric based NCFETs. Tightly integrated with these research activities is a 5-year plan to pilot sustainable, all-level educational curricula that is scalable to the state and the national levels for creating a steady pipeline of domestic semiconductor workforce. Proposed pre-college activities include increasing awareness and excitement for semiconductor related topics in high-school classrooms through hands-on, outreach activities and teacher training via partnership with local schools. For higher-level education, the project will undertake formal and scholarly studies to understand the efficacy of different pedagogical techniques, such as online, remote and hybrid mode of teaching, in the new socio-economic realities of the post-pandemic world for undergraduate and graduate semiconductor courses.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

提议编号：2047880原理调查员：ASIF I KHANTITLE：职业：超低功率计算的反弗弗自由负电容晶体管：乔治亚技术研究所无技术技术摘要：社会正在经历了其数字化的形式，即在Facepor上进行了一种典型的成长 - 在Facebook上进行了启动，这是一定的，它是一种替代型号，是一定的，它是一定效果，可以在Facepook上进行启动，而这是一种效果，而这是一种效果，而这是一种替代的效果，则是一定的效果。 YouTube中的全球观众或通过Twitter指挥革命。然而，现代计算的这种便利性在能源使用和环境影响方面具有钢的成本：如今，全球信息基础设施，即数据中心，发出的温室气体与内华达州或荷兰或马来西亚等国家 /地区的温室气体一样多，并且构成了全球电力需求的1％。根据科学估计，在未来15 - 20年内，这一比例可能会高达20％。这一预测的核心是这样一个事实，即我们的尖端数字硬件长期以来一直在其能源效率（在其最基本的基础构建基础：晶体管的水平上）进行高级升级。拟议的研究旨在探索一种节能的晶体管概念 - 负电容现场晶体管，该晶体管将使用新的纳米尺度材料（称为抗佛罗独立氧化物）进行制造。技术摘要旨在通过探索能源效率的全球能量质量效果效果效率效果效率效果的全球能量挑战，旨在解决信息效率的全球能量质量效果，效果效率效率效率高效，效果效率高效，效果效率效率效率效果，效果效果效率高效，效果效率效果，效果效率高效。晶体管（NCFET）。创新的主要主张是使用一种新的纳米尺度材料（称为抗氟电氧化物）来实现这种晶体管技术。潜在的假设是，由于抗纤维电性的独特物理现象：电场诱导的非极性到极性相的过渡，抗纤维自用NCFET可以导致变压器的能量降低以下，低于基本的热力学极限，比在其传统的基于ferrolectric中允许的基本限制更大。与这些研究活动紧密融合的是一项为期5年的计划，旨在为全国和国家级别的可持续性，全层次的教育课程提供稳定的稳定，以创建国内半导体员工的稳定管道。拟议的预科课程包括通过与当地学校的合作伙伴关系，通过动手实践，外展活动和教师培训来提高对半导体相关主题的兴奋和兴奋。对于高级教育，该项目将进行正式和科学的研究，以了解不同教学技术的有效性，例如在线，远程和混合教学模式，在大流行后世界的新社会经济现实中，本质上和研究生的半导体课程都取决于NSF的智力，并反映了NSF的规定，该奖项是由NSF的构建范围的，该奖项反映了NSF的规定。审查标准。

项目成果

A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage

• DOI: 10.1109/led.2022.3231123
• 发表时间: 2023-02
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: D. Das;Prasanna Venkatesan Ravindran;Chinsung Park;Nujhat Tasneem;Zheng Wang;Hang Chen;W. Chern