Aluminum Gallium Nitride Heterostructures for High Temperature Transistor and Sensor Applications

用于高温晶体管和传感器应用的氮化铝镓异质结构

• 批准号: 9160469
• 负责人: Asif Khan
• 金额: $ 4.99万
• 依托单位: APA Optics Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-01-01 至 1992-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9160469&HistoricalAwards=false
• 关键词: Aluminum; Gallium; Nitride; Heterostructures; Temperature

The proposed program is aimed at developing aluminum gallium nitride heterostructure devices for high temperature sensor and electronics applications. We will focus on the high electron mobility transistor (or HEMT) for use as a high temperature microwave device or as a sensitive ultraviolet detector. Gallium nitride has a large bandgap of 3.2 eV which gives it a greater breakdown voltage and a higher saturated electron velocity than gallium arsenide. In addition, it is stable in air to around 800oC which makes it ideal for high temperature HEMT device use. HEMT devices are excellent for both power and low noise amplification since they posses a high carrier concentration and enhanced carrier mobility. Their power and noise performance increases with the potential barrier at the heterostructure interface. A Phase I program is proposed to produce high n-doped good optical quality films using a unique atomic layer epitaxy approach. All the present day growth and doping procedures cannot produce low resistivity epilayers. A successful Phase I program combined with our demonstration of high quality films and enhanced electron mobilities in heterojunctions with aluminum concentrations less than 20% will form a strong basis for a Phase II HEMT fabrication effort.

拟议的程序旨在开发用于高温传感器和电子应用的氮化铝镀铝壳。 我们将专注于高电子晶体管（或HEMT）作为高温微波设备或敏感的紫外线检测器。 氮化壳的带隙为3.2 eV，这使其比木乙耐芯壳具有更大的击穿电压和更高的饱和电子速度。 此外，它在空气中稳定至800oC左右，这是高温HEMT设备使用的理想选择。 HEMT设备非常适合功率和低噪声扩增，因为它们具有高载体浓度和增强的载流子迁移率。 它们的功率和噪声性能随着异质结构接口处的潜在障碍而增加。 提出了I期计划，以使用独特的原子层外延方法生产高N掺杂的良好光学质量膜。 当今的所有增长和掺杂程序都无法产生低电阻率表层。 成功的I期计划结合了我们对高质量膜的演示和铝浓度少于20％的异质结构中的电子迁移率的增强，将为II期HEMT制造工作构成强大的基础。