高品质硅基立式InAs/GaSb异质结纳米线阵列MOCVD自催化生长研究

This project is aimed at the national major demand of "integrated chip with independent intellectual property rights", and explores the nanomaterials preparation technology based on new principles and new structure nano-devices.The technology of very large scale microelectronic integrated circuit has been developed according to Moore's law..This project intends to avoid for more work but will lead to late device fatally flawed Au catalyst preparation of nanometer line technology, hoping to instead, in-depth research work on the international relatively autocatalytic nanowires growth mechanism theory, combining to large-scale vertical nanowire array integrated graphics device substrate technology, relying on MOCVD technology platform, using the catalytic growth technology, in low-cost silicon graphics substrate was perpendicular to the substrate, uniform morphology, crystal product is good and no Au deep-level recombination center InAs/GaSb heterostructure nanowires array.It is very important to fully master the preparation process, structure and physical properties of nanowires for the preparation of high-performance devices and chips that meet the application requirements.Truly for the late nanowire devices can be defect-free, array, scale, high-speed application in nanowire chips lay a good foundation for material preparation technology, greatly improve our ability to master the core technology and cutting-edge technology in this field.

本项目面向的国家重大需求“拥有自主知识产权的集成芯片”，探索基于新原理、新结构纳米器件的纳米材料制备技术。超大规模微电子集成电路技术已小到几纳米，发展突破性技术迫在眉睫。.本项目拟避开已有较多研究工作但会导致后期器件存在致命缺陷的Au催化制备纳米线技术，希望能独辟蹊径，深入研究国际上开展工作相对较少的自催化纳米线生长机制理论，结合有利于大规模立式纳米线器件阵列集成的图形衬底技术，依托MOCVD技术平台，采用自催化生长技术，在低成本的硅图形衬底上制备出垂直于衬底、形貌均匀、晶体品相良好、无Au等深能级复合中心的InAs/GaSb异质结纳米线阵列。充分掌握纳米线的制备工艺、结构及物理性质，这对制备出符合应用需求的高性能器件、芯片至关重要。真正为后期纳米线器件能无缺陷化、阵列化、规模化、高速化应用于纳米线芯片打好材料制备技术基础，大幅度提高我国掌握该领域核心技术和前沿技术的能力。

本项目针对在硅基衬底大晶格失配下如何实现定位、可控生长高品质InAs\GaSb异质结纳米线阵列这一关键科学问题，发展了新的材料生长技术，提出了一种高温退火与衬底表面形成的薄氧化层相结合的衬底处理方法，可实现高品质、高可重现性的硅基立式纳米线批量制备。阐明了相关重要的生长机理和机制，提出了与实验结果良好吻合的生长模型，验证了图形衬底上生长InAs/GaSb异质结纳米线的自催化VLS生长机制。做出了有国际影响力的创新工作，实现Si/SiO2图形衬底上高品质InAs/GaSb异质结纳米线阵列制备技术。制备得到了高品质、形貌、尺寸和结构可控、垂直于衬底的InAs\GaSb异质结纳米线阵列，为基于新型半导体纳米线的超高速、高性能量子电子器件、光电子器件的制备和研究提供了材料支撑，推进了半导体纳米线材料和器件相关核心技术的国产自主研发。

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