Quantum Semiconductor Electronics

量子半导体电子

• 批准号: 07044120
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 8.26万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07044120/
• 关键词: Mesoscopic; Quantum Nano-Structures; Quantum Dot; Super lattice; Resonant Tunneling; Single electron; One-Dimensional Structures; Semiconductor

(1) Nano-scale semiconductor structures are fabricated using selective crystal growth or electron beam lithography technique. The archived size is about 10 nm. Moreover, Semiconductor nano-crystals of InAs or Si whose size is less than 10 nm are successfully formed using self-organization mechanism in the initial stage of crystal growth.(2) It is found for the first time that the coherence length of the edge states which is formed at the edges of the device under very strong magnetic field is much longer than normal states. The mechanisms for the break down of the quantized Hall effect in the large current region are also clarified. It is found that the resistance of the two-dimensional electron gas in the quantized Hall regime is very sensitive to far-infrared irradiation. This effect is possibly applied to the far-infrared detectors.(3) New memory structures with InAs nano-crystals near the channel is developed. MOS memory with Si nano-crystals is also fabricated and room temperature operation of memory effects is demonstrated. Point contact MOSFETs acting as single electron transistors are successfully fabricated and single electron tunneling is observed at room temperature. Quantum effects in such small devices are also intensively investigated.

(1)采用选择性晶体生长或电子束光刻技术制造纳米级半导体结构。存档尺寸约为10 nm。此外，在晶体生长的初始阶段利用自组织机制成功形成了尺寸小于10 nm的InAs或Si半导体纳米晶体。(2)首次发现边缘的相干长度在强磁场下在器件边缘形成的状态比正常状态长得多。还阐明了大电流区域量子化霍尔效应的击穿机制。研究发现，量子化霍尔区的二维电子气的电阻对远红外辐射非常敏感。这种效应可能应用于远红外探测器。(3)开发了通道附近具有InAs纳米晶体的新型存储结构。还制作了带有硅纳米晶体的MOS存储器，并演示了室温操作的存储器效应。成功制造了充当单电子晶体管的点接触 MOSFET，并在室温下观察到了单电子隧道效应。此类小型设备中的量子效应也得到了深入研究。

项目成果

S.Tsujino, C.Metzner: "Saturation of Intersubband Absorption by Real-Space Transfer in Modulation Doped single GaAs-AlAs Quantum Well" Physica Status Solidi (b). 204. 162 (1997)

S.Tsujino、C.Metzner：“调制掺杂单 GaAs-AlAs 量子阱中实空间传输引起的子带间吸收饱和”Physica Status Solidi (b)。

M.Rufenacht: "Oscillatory Behavior of Relaxation of Hot Electrons in a Biased Charge Transfer Double Quantum Well" Physica Status Solidi (b). 204. 151 (1997)

M.Rufenacht：“偏置电荷转移双量子阱中热电子弛豫的振荡行为”物理状态固体 (b)。

S.Ozaki: "Obsevation of resonant opticcal-phonon assisted tunneling in asymmetric double guantum wells" Journal of Applied Physics. 83,2. 962-965 (1998)

S.Ozaki：“非对称双量子阱中共振光学声子辅助隧道效应的观察”应用物理学杂志。

T.Hiramoto: "Room Temperrature Coulomb Blockade and Low Temperrature Hopping Trasport in a Multi-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor" Japanese Journal of Applied Physics. 36. 4139-4142 (1997)

T.Hiramoto：“多点通道金属氧化物半导体场效应晶体管中的室温库仑封锁和低温跳跃传输”日本应用物理学杂志。

T.Arakawa,Y.Kato,F.Sogawa and Y.Arakawa: "Photoluminescence Studies fo GaAs Quantum Wires with Quantum Confined Stark Effect" Appl.Phys.Lett.7. 355 (1997)

T.Arakawa、Y.Kato、F.Sogawa 和 Y.Arakawa：“具有量子限制斯塔克效应的 GaAs 量子线的光致发光研究”Appl.Phys.Lett.7。