Development of semiconductor integrated devices for coherent THz electromagnetic field generation

相干太赫兹电磁场产生半导体集成器件的开发

• 批准号: 08555081
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 11.14万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555081/
• 关键词: quantum well; microcavity; THz electromagnetic wave; femto-second spectroscopy; 量子ナノ構造; MOCVD; 量子細線; 量子箱; レーザ; 化合物半導体; 光デバイス

Increasing demand for info-corn technology requires development of new frequency region of electromagnetic wave. Paricularly. the frequency range of THz has not been well devloped for practical applications.In this research, we intended to develop semiconductor integrated devices for generating coherent THz electromagnetic field as a fundamental technologies for constructing T-bit information network systems in the 2L^<st> century. We aim at contributing to practical application of THz and femtosecond technologies.First, we developed a new THz detection devices by using low temperatiure GaAs growth and integration of photoconductive dipole antenna for irradiation and detection of THz electromagnetic field. As a result. sensitivity is improved by a factor of 25 compared to conventional type of detector. Next, we designed and developed microcavity quantum well structures for new type of coherent THz electromagnetic wave generator. This utilizes cavity polariton effect in semiconductors which was discovered by ourselves in 1992. By measuring reflectivity response of the device which was photo-pumped, we succeed in observing THz modulated optical signal form the device. This results partly establish fundamentals of a new type THz electromagnetic wave generator, which is important for information and communication technologies in the 21st century including microwave photonics.

对信息玉米技术日益增长的需求需要开发新的电磁波频率区域。特别是。太赫兹的频率范围尚未针对实际应用得到很好的开发。在本研究中，我们打算开发产生相干太赫兹电磁场的半导体集成器件，作为在2L^<st>中构建T位信息网络系统的基础技术世纪。我们的目标是为太赫兹和飞秒技术的实际应用做出贡献。首先，我们利用低温砷化镓生长和集成光电导偶极子天线，开发了一种新型太赫兹探测装置，用于太赫兹电磁场的照射和探测。因此。与传统类型的检测器相比，灵敏度提高了 25 倍。接下来，我们设计并开发了新型相干太赫兹电磁波发生器的微腔量子阱结构。这利用了我们自己在1992年发现的半导体中的空腔极化子效应。通过测量光泵器件的反射率响应，我们成功地观察到了器件中的太赫兹调制光信号。该结果部分奠定了新型太赫兹电磁波发生器的基础，这对于包括微波光子学在内的21世纪信息和通信技术非常重要。

项目成果

T.Ando, Y.Arakawa, et.al.: "Mesoscopic Physics and Electronics" Springer, 271 (1997)

T.Ando、Y.Arakawa 等人：“介观物理与电子学”Springer，271 (1997)

A.Shimizu and M.Yamanishi: "Photon-energy dissipation caused by an external electric circuit in “virtual" Photo-excitation processes" Phys.Rev.Lett.72. 3343-3346 (1994)

A.Shimizu 和 M.Yamanishi：““虚拟”光激发过程中外部电路引起的光子能量耗散”Phys.Rev.Lett.72 (1994)。

橘浩一、染谷隆夫、荒川泰彦: "GaN上へのInGaN量子ドットの自然形成" 電子情報通信学会論文誌. Vol.J81-C-I No.8. 474-475 (1998)

Koichi Tachibana、Takao Someya、Yasuhiko Arakawa：“GaN 上 InGaN 量子点的自发形成”，电子、信息和通信工程师学会卷 J81-C-I 第 8 期（1998 年）。

S.Ishida and Y.Arakawa: "Selective Self-assembling GaAs Quantum Dots Grown in Two-dimentional V-grooves by Selective Metal Organic Chemical Vapor Deposition" Appl.Phys.Lett.Vol.72. 800 (1998)

S.Ishida 和 Y.Arakawa：“通过选择性金属有机化学气相沉积在二维 V 形槽中生长的选择性自组装 GaAs 量子点”Appl.Phys.Lett.Vol.72。

T.Saito,J.N.Schulman, ^* and Y.Arakawa: "Strain-energy Distribution and elctronic structure of InAs Pyramidal Quantum Dots with Uncovered Surfaces:Tight-binding Analysis" Phys.Rev.B.Vol.57. 13016-13019 (1998)

T.Saito、J.N.Schulman、^* 和 Y.Arakawa：“具有未覆盖表面的 InAs 金字塔量子点的应变能量分布和电子结构：紧束缚分析”Phys.Rev.B.Vol.57。