Fundamental Research on Quantum Microcavity Lasers

量子微腔激光器基础研究

• 批准号: 03452178
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 4.03万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452178/
• 关键词: Microcavity; Semiconductor Lasers; Quantum Wire; Quantum Dots; Photon; Selective Growth; MOCVD; Quantum Effect; 垂直共振器; 量子井戸レ-ザ; 量子箱; フォトルミネッセンス; 半導体レ-ザ

It is now very important to control completely both electrons and photons for future light emitters to establish systems.In this research project,we have been investigating quantum microcavity lasers in which moth electron and photons are completely controlled by using quantum wires / dots and optical microcavities.First,we investigated fabrication of the quantum wires and dots by MOCVD (Metal Organic Chemical Vapor Deposition). We have obtained GaAs quantum wires with the lateral width of less than 10nm with high quantum efficiency. The photoluminescence and magneto-photoluminescence clearly indicate the existence of the quantum wire effect. The measurement of photoluminescence decay time demonstrates correlation between exciton lifetime and the size of the quantum wire. Strained InGaAs quantum wires are also successfully fabricated. In addition,we fabricated GaAs dot structures using the similar MOCVD method. The smallest structure so far achieved is the quantum dot with the lateral dimension or 25nm. Photoluminescence is obtained from the microstructure.Secondly,microcavity effects are investigated so that the interaction between the exciton and the microcavity mode can be controlled. The measurement of reflectivity spectra demonstrates strong mode coupling between the two mode. This strong mode coupling is corresponding to vacuum-Rabi oscillation.In conclusion,we have studied fundamental issues for future quantum microcavity lasers including fabrication of the quantum wires/dot and interaction between confined excitons and confined photons. The results demonstrated here are useful for further investigation of ultimate light emitters.

现在，完全控制电子和光子对于未来光发射器建立系统非常重要。在这个研究项目中，我们一直在研究量子微腔激光器，其中通过使用量子线/点和光学微腔来完全控制飞蛾电子和光子首先，我们研究了通过MOCVD（金属有机化学气相沉积）制造量子线和量子点。我们获得了横向宽度小于10nm的GaAs量子线，具有较高的量子效率。光致发光和磁光致发光清楚地表明量子线效应的存在。光致发光衰减时间的测量证明了激子寿命与量子线尺寸之间的相关性。应变InGaAs量子线也已成功制造。此外，我们使用类似的MOCVD方法制造了GaAs点结构。迄今为止实现的最小结构是横向尺寸为25nm的量子点。从微观结构中获得光致发光。其次，研究微腔效应，从而可以控制激子与微腔模式之间的相互作用。反射率光谱的测量表明两种模式之间存在强模式耦合。这种强模式耦合对应于真空-拉比振荡。 总之，我们研究了未来量子微腔激光器的基本问题，包括量子线/点的制造以及受限激子和受限光子之间的相互作用。这里展示的结果对于进一步研究最终光发射器很有用。

项目成果

C.Weisbuch,M.Nishioka,A.Ishikawa,Y.Arakawa:"“Observation of the Coupled ExcitonーPhoton Mode Splitting in a Semiconductor Quantum Microcavity"" Physical Review Letters. 69. 3314-3317 (1992)

C. Weisbuch、M. Nishioka、A. Ishikawa、Y. Arakawa：“半导体量子微腔中耦合激子－光子模式分裂的观察”《物理评论快报》69. 3314-3317 (1992)。

M.Willatzen,T.Takahashi,Y.Arakawa:"“Nonlinear Gain Effects Due to Carrier Heating and Spectral Holeburning in Strained Layer Lasers"" IEEE Photonics Tech.Letters. 4. 682-685 (1992)

M. Willatzen、T. Takahashi、Y. Arakawa：““应变层激光器中因载体加热和光谱烧孔而产生的非线性增益效应””IEEE 光子技术通讯。4. 682-685 (1992)

Y.Arakawa,Y.Nagamune,M.Nishioka,S.Tsukamoto: "Fabrication and Optical Properties of GaAs Quantum Wires and Dots by MOCVD Selective Growth (Invited)" Semiconductor Science and Technology. (1993)

Y.Arakawa，Y.Nagamune，M.Nishioka，S.Tsukamoto：“MOCVD选择性生长GaAs量子线和点的制造和光学性质（特邀）”半导体科学与技术。

M.Nishioka,S.Tsukamoto,Y.Nagamune,T.Tanaka,Y.Arakawa: "Fabrication of InGaAs Strained Quantum Wires Using Selective MOCVD Selective Growth on SiO2-Patterned GaAs Substrate" Journal of Crystal Growth. Vol.124. 502-506 (1992)

M.Nishioka、S.Tsukamoto、Y.Nagamune、T.Tanaka、Y.Arakawa：“利用选择性 MOCVD 在 SiO2 图案 GaAs 衬底上选择性生长制造 InGaAs 应变量子线”晶体生长杂志。

T.Yamauchi,T.Takahashi,J.N.Schulman,Y.Arakawa:"“Theoretical Analysis of Band Structures and Lasing Characteristics in Strained Quantum Wire Lasers"" to be published in IEEE J.of Quantum Electronics. (1993)

T. Yamauchi、T. Takahashi、J. N. Schulman、Y. Arakawa：““应变量子线激光器中能带结构和激光特性的理论分析””将发表在 IEEE J. of Quantum Electronics (1993) 上。