Oxide and chalcogenide MOCVD (metal-organic chemical vapour deposition)

氧化物和硫族化物 MOCVD（金属有机化学气相沉积）

基本信息

批准号：
EP/T019085/1
负责人：
Daniel Lamb
金额：
$ 336.26万
依托单位：
Swansea University
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2020
资助国家：
英国
起止时间：
2020 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FT019085%2F1
关键词：
Oxide chalcogenide MOCVD metal organic

项目摘要

The history of II-VI metal-organic chemical vapour deposition (MOCVD) goes back as far as IIII-V MOCVD but has not had the traction in applications for lasers, LEDs and high frequency devices that has been experienced by III-V semiconductors. A new generation of MOCVD equipment can more fully exploit the potential of II-VI semiconductors and explore new oxides and chalcogenides in the exiting areas of III-VIs such as Ga2O3 and 2-D semiconductors such as MoS2. There is now a compelling case for the UK to have state-of-the-art MOCVD equipment for compound semiconductors (CS) covering oxide and chalcogenide materials that are not covered by existing centres such as the National Epitaxy Facility at Sheffield, Cambridge and UCL, and Institute of CS at Cardiff. The UK has a golden opportunity to build on our strengths in CS research that will drive innovation across a range of new opto-electronic and power electronic devices. The need arises from a new generation of functional compound semiconductor materials to capture the unique properties of oxide and chalcogenide compound semiconductors (CSs), complementing III-V compounds and silicon, and opening new application areas in optoelectronics, energy and healthcare. It is proposed that we buy the Aixtron Close Couple Showerhead (CCS) reactor that has been proven to be the reactor design of choice for GaN deposition and will be the ideal equipment to deposit high quality oxide and chalcogenide compound semiconductor materials. "The UK needs this facility, which it does not have at present. Swansea is an excellent place for it." - Prof. Sir Colin Humphreys (Cambridge). "This proposed research facility will perfectly complement the installation of ~100 production MOCVD reactors leveraged by a £375M investment by IQE Plc over 2018-2022" - Dr Wyn Meredith (CSC, Cardiff). The CCS reactor will be installed in a new building for the Centre for Integrated Semiconductor Materials (CISM) (due for completion in Q1 2021) on the Swansea University Bay Campus. Over 140 m2 of specialist materials laboratory space will be allocated to the MOCVD reactor and complementary materials and characterisation equipment from Professor Irvine's laboratory. This new laboratory will be managed by Professor Irvine's team to provide high quality oxide and chalcogenide CSs to our research partners in Swansea University, other UK universities, industrial partners and to international collaborators. This will put the UK at the forefront of new science and technology using oxide and chalcogenide CSs for applications including high efficiency photovoltaic solar cells, Light harvesting quantum wire opto-electronic devices, piezoelectric energy harvesting, high breakdown voltage power electronic devices and light emitters. This new science and technology will benefit EPSRC priorities of "21st Century Products" and "Sustainable Industries" through enabling smart new products that could be rapidly prototyped through well proven manufacturing capability for MOCVD in the UK and enabling the application of more sustainable materials and reduced materials usage. This exciting opportunity is detailed in the case for support.

II-VI金属有机化学蒸气沉积（MOCVD）的历史可以追溯到IIII-V MOCVD，但在激光，LED和高频设备的应用中没有IIII-V半导体所经历的牵引力。新一代的MOCVD设备可以更全面地探索II-VI半导体的潜力，并在III-VIS的退出区域（例如GA2O3和2-D半导体）（例如MOS2）探索新的氧化物和葡萄干剂。现在，英国有一个令人信服的案例，可以为复合半导体（CS）设备最先进的MOCVD设备，该设备涵盖了氧化物和辣椒剂材料，这些设备不受现有中心（例如Sheffield，Cambridge，Cambridge and UCL）等现有中心的覆盖，以及Cardiff的CS Castitute。英国有一个千载难逢的机会来基于我们在CS研究中的优势，这将推动一系列新的光电和电力电子设备的创新。需求源于新一代的功能化合物半导体材料，以捕获氧化物和墨西哥奶油蛋白酶化合物半导体（CSS），竞争III-V化合物和硅的独特特性，并在光电，能源，能源和医疗保健方面开设了新的应用领域。建议我们购买已被证明是GAN沉积的反应堆设计的Aixtron近对淋浴（CCS）反应堆，它将是沉积高质量氧化物和硫代构基因化合物化合物半导体材料的理想设备。 “英国需要目前没有的设施。斯旺西是一个很好的地方。” - 科林·汉弗莱斯爵士（剑桥）教授。 “该提议的研究设施将完美地补充IQE PLC在2018 - 2022年投资3.75亿英镑投资的约100个生产MOCVD反应堆的安装。 CCS反应堆将安装在综合半导体材料中心（CISM）的新建筑物中（应于第二季度2021年第1季度完成）。超过140平方米的专业材料实验室空间将分配给Irvine's Laboratory教授的MOCVD反应堆以及互补的材料和表征设备。这个新的实验室将由欧文教授的团队管理，为我们在斯旺西大学，英国其他大学，工业伙伴和国际合作者的研究合作伙伴提供高质量的氧化物和葡萄干化CSS。这将使英国使用氧化物和硫代基因CSS进入新科学和技术的最前沿，包括高效率光伏太阳能电池，光收集量子电线光电机设备，压电电能量收集，高损坏电压电压电源电源和光发射器。这项新的科学技术将通过启用可以通过良好的MOCVD制造能力来迅速原型的“ 21世纪产品”和“可持续行业”的EPSRC优先事项，并促进更可持续的材料的应用和减少材料的使用。在支持案例中详细介绍了这个激动人心的机会。