Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications

交替xr掺杂技术制备高空穴密度p型氮化物半导体薄膜晶体及其应用

基本信息

批准号：
13355001
负责人：
HIRAYAMA Hideki
金额：
$ 33.78万
依托单位：
RIKEN (2003)Tokyo Institute of Technology (2001-2002)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

项目摘要

The demands for high-intensity ultraviolet (UV) laser diodes (LDs) and light-emitting diodes (LEDs) are increasing for the application of high-efficiency lighting, biochemical and medical fields or high-density optical storages. GaN and III-nitride compound semiconductors are attracting considerable attention as candidate materials for the realization of UV-LDs and LEDs. However, it is difficult to achieve high-efficiency deep UV-LEDs or LDs using nitride-based materials because of the difficulty in obtaining High-Al-content p-type AlGaN. The purpose of this work is to achieve high-hole-density for wide-bandgap p-type AlGaN using an alternating co-doping technique, and to develop high-efficiency deep UV LEDs or LDs operating in the wavelength between 250-350 nm.First, we have demonstrated high-hole-density for Si/Mg co-doped GaN epitaxial filmes fabricating using alternating gas supply method. We obtained significant increase of hole density by introducing Si-doping concentration in Mg-doped GaN. Then, we fabricated high-Al-content Mg-doped AlGaN using alternating gas supply method. We obtained hole-conductivity for extremely high Al content (46-53%) Mg-doped AlGaN by using the alternating gas supply method. We have also observed the reduction of activation energy by introducing Si/Mg co-doping into AlGaN. We fabricated 310 nm-band InAlGaN-based deep UV light-emitting diodes (LEDs) with high-Al-content (53%) p-type AlGaN grown with the alternating gas supple method. We have achieved sub-milliwatt output power under RT pulsed operation in the wavelength between 308-314 nm.

高效照明、生化和医疗领域或高密度光存储的应用对高强度紫外（UV）激光二极管（LD）和发光二极管（LED）的需求不断增加。 GaN 和 III 族氮化物化合物半导体作为实现 UV-LD 和 LED 的候选材料引起了广泛关注。然而，由于难以获得高Al含量的p型AlGaN，因此使用氮化物基材料很难实现高效的深UV-LED或LD。这项工作的目的是利用交替共掺杂技术实现宽带隙 p 型 AlGaN 的高空穴密度，并开发工作波长在 250-350 nm 之间的高效深紫外 LED 或 LD。首先，我们展示了使用交替供气方法制造的 Si/Mg 共掺杂 GaN 外延薄膜的高空穴密度。通过在Mg掺杂的GaN中引入Si掺杂浓度，我们获得了空穴密度的显着增加。然后，我们采用交替供气法制备了高Al含量的Mg掺杂AlGaN。我们通过使用交替供气方法获得了极高Al含量（46-53%）Mg掺杂AlGaN的空穴电导率。我们还观察到通过在 AlGaN 中引入 Si/Mg 共掺杂可以降低活化能。我们制造了 310 nm 波段的 InAlGaN 基深紫外发光二极管 (LED)，其具有采用交替供气法生长的高 Al 含量 (53%) p 型 AlGaN。我们在 308-314 nm 波长的 RT 脉冲操作下实现了亚毫瓦输出功率。