Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN
使用四元InAlGaN开发紫外光亮发光二极管
基本信息
- 批准号:14205006
- 负责人:
- 金额:$ 34.11万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The demands for high-intensity ultraviolet(UV) laser diodes(LDs) and light-emitting diodes(LEDs) are increasing in the fields of high-density optical storage or high-efficiency lighting or biochemical and medical fields. GaN and III-nitride compound semiconductors are attracting considerable attention as candidate materials for the realization of UV-LDs and LEDs. The purpose of our work is to develop high-intensity UV-LEDs or LDs operating in the 250-350 nm wavelength range.We have demonstrated high-efficiency UV emission from quaternary InAlGaN-based quantum wells(QWs) in the wavelength range between 290-375 nm at room temperature(RT) using the In-segregation effect. Emission fluctuations in the submicron region due to In-segregation were clearly observed for quaternary InAlGaN epitaxial layers. An internal quantum efficiency as high as 15% was estimated for a quaternary InAlGaN-based single quantum well(SQW) at RT. Such high efficiency UV emission can even be obtained on high threading-dislocation density buffers. We fabricated 310 nm-band deep UV light-emitting diodes(LEDs) with quaternary InAlGaN active regions. We achieved sub-milliwatt output power under RT pulsed operation for 308-314 nm LEDs. We also demonstrated a high output power of 7.4 mW from a 352 nm quaternary InAlGaN-based LED fabricated on a GaN substrate under RT CW operation. The maximum external quantum efficiency(EQE) of the 352 nm InAlGaN-based LED was 1.1%, which is the highest EQE ever obtained for 350 nm-band UV LEDs with top-emission geometry. From these results, the advantages of the use of quaternary InAlGaN for 300-350nm-band UV emitters was revealed.
高密度光学存储或高效率照明或生化和医疗领域的领域,对高强度紫外线(UV)激光二极管(LDS)和发光二极管(LED)的需求正在增加。 GAN和III-氮化物化合物半导体作为实现UV-LDS和LED的候选材料引起了极大的关注。我们工作的目的是开发在250-350 nm波长范围内运行的高强度紫外线或LDS。我们已经在290-375 nm的波长范围内在290-375 nm的波长范围内使用室温(RT)在室温(RT)之间使用In-Secegrecation In-segrecation效应在290-375 nm的波长范围内表现出高效的UV UV紫外线。对于第四纪inalgan外延层,清楚地观察到了由于隔离而引起的亚微米区域的发射波动。估计RT的第四纪基于Inalgan的单量子井(SQW)的内部量子效率高达15%。甚至可以在高螺纹脱位密度缓冲液上获得如此高效率的UV发射。我们用第四纪inalgan活跃区域制造了310 nm带紫外线发光二极管(LED)。我们在308-314 nm LED下实现了RT脉冲操作下的亚毫米输出功率。我们还证明了从RT CW操作下的GAN基板上制造的基于352 nm的基于Inalgan的LED的高输出功率为7.4 MW。 352 nm基于Inalgan的LED的最大外部量子效率(EQE)为1.1%,这是具有最高发射几何形状的350 nm波段UV LED获得的最高EQE。从这些结果中,揭示了使用第四纪inalgan在300-350nm频段紫外发射器中的优势。
项目成果
期刊论文数量(59)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
InAlGaN4元混晶を用いた330nm帯高効率紫外LED
采用InAlGaN四元混晶的330nm波段高效紫外LED
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:H.Katayama-Yoshida;平山秀樹
- 通讯作者:平山秀樹
Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs
用于深紫外 LED 的高铝含量 p 型 AlGaN 的生长和退火条件
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:T.Obata
- 通讯作者:T.Obata
Quaternary InAlGaN based deep UV LED with high-Al-content P-type AlGaN
基于四元 InAlGaN 的高 Al 含量 P 型 AlGaN 深紫外 LED
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:T.Asano;B;-S.Song;Y.Akahane and S.Noda;Y.Kono;H.Hirayama
- 通讯作者:H.Hirayama
Marked enhancement of 320-360 nm UV emission in quaternary InxAlyGal-x-yN with In-segregation effect
具有 In 偏析效应的四元 InxAlyGal-x-yN 的 320-360 nm 紫外发射显着增强
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:H.Hirayama;T.Yamabi;A.Kinoshita;Y.Enomoto;A.Hirata;T.Araki;Y.Nanishi;Y.Aoyagi
- 通讯作者:Y.Aoyagi
LED最新技術動向〜性能向上・課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望
最新 LED 技术趋势 - 性能改进和问题解决方案合集 - 第 5 章,缩短紫外线 LED 波长和提高效率的问题和前景
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:H.Hirayama
- 通讯作者:H.Hirayama
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HIRAYAMA Hideki其他文献
HIRAYAMA Hideki的其他文献
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{{ truncateString('HIRAYAMA Hideki', 18)}}的其他基金
Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates
硅衬底垂直型大面积高功率深紫外LED研究
- 批准号:
24246010 - 财政年份:2012
- 资助金额:
$ 34.11万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Research for Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
使用氮化物半导体的太赫兹量子级联激光器的研究
- 批准号:
21246005 - 财政年份:2009
- 资助金额:
$ 34.11万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Research for Far-infrared-Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
使用氮化物半导体的远红外-太赫兹量子级联激光器的研究
- 批准号:
19206004 - 财政年份:2007
- 资助金额:
$ 34.11万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
交替xr掺杂技术制备高空穴密度p型氮化物半导体薄膜晶体及其应用
- 批准号:
13355001 - 财政年份:2001
- 资助金额:
$ 34.11万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
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