Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN

使用四元InAlGaN开发紫外光亮发光二极管

• 批准号: 14205006
• 负责人: HIRAYAMA Hideki
• 金额: $ 34.11万
• 依托单位: RIKEN
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205006/
• 关键词: Quaternary InAlGaN; Wide bandgap; MOCVD; In segregation; UV-LEDs; Threading dislocation density; Optical properties; Photoluminescence; 紫外半導体レーザ; 貫通転移密度; GaN基板; 交互供給成長法; 内部量子効率; MOCVD成長; Mgドーピング; 交互供給法; 深紫外LED; 電流注入; Quaternary InAlGaN; Wide bandgap; MOCVD; In segregation; UV-LEDs; Threading dislocation density; Optical properties; Photoluminescence; 紫外半導体レーザ; 貫通転移密度; GaN基板; 交互供給成長法; 内部量子効率; MOCVD成長; Mgドーピング; 交互供給法; 深紫外LED; 電流注入

The demands for high-intensity ultraviolet(UV) laser diodes(LDs) and light-emitting diodes(LEDs) are increasing in the fields of high-density optical storage or high-efficiency lighting or biochemical and medical fields. GaN and III-nitride compound semiconductors are attracting considerable attention as candidate materials for the realization of UV-LDs and LEDs. The purpose of our work is to develop high-intensity UV-LEDs or LDs operating in the 250-350 nm wavelength range.We have demonstrated high-efficiency UV emission from quaternary InAlGaN-based quantum wells(QWs) in the wavelength range between 290-375 nm at room temperature(RT) using the In-segregation effect. Emission fluctuations in the submicron region due to In-segregation were clearly observed for quaternary InAlGaN epitaxial layers. An internal quantum efficiency as high as 15% was estimated for a quaternary InAlGaN-based single quantum well(SQW) at RT. Such high efficiency UV emission can even be obtained on high threading-dislocation density buffers. We fabricated 310 nm-band deep UV light-emitting diodes(LEDs) with quaternary InAlGaN active regions. We achieved sub-milliwatt output power under RT pulsed operation for 308-314 nm LEDs. We also demonstrated a high output power of 7.4 mW from a 352 nm quaternary InAlGaN-based LED fabricated on a GaN substrate under RT CW operation. The maximum external quantum efficiency(EQE) of the 352 nm InAlGaN-based LED was 1.1%, which is the highest EQE ever obtained for 350 nm-band UV LEDs with top-emission geometry. From these results, the advantages of the use of quaternary InAlGaN for 300-350nm-band UV emitters was revealed.

高密度光学存储或高效率照明或生化和医疗领域的领域，对高强度紫外线（UV）激光二极管（LDS）和发光二极管（LED）的需求正在增加。 GAN和III-氮化物化合物半导体作为实现UV-LDS和LED的候选材料引起了极大的关注。我们工作的目的是开发在250-350 nm波长范围内运行的高强度紫外线或LDS。我们已经在290-375 nm的波长范围内在290-375 nm的波长范围内使用室温（RT）在室温（RT）之间使用In-Secegrecation In-segrecation效应在290-375 nm的波长范围内表现出高效的UV UV紫外线。对于第四纪inalgan外延层，清楚地观察到了由于隔离而引起的亚微米区域的发射波动。估计RT的第四纪基于Inalgan的单量子井（SQW）的内部量子效率高达15％。甚至可以在高螺纹脱位密度缓冲液上获得如此高效率的UV发射。我们用第四纪inalgan活跃区域制造了310 nm带紫外线发光二极管（LED）。我们在308-314 nm LED下实现了RT脉冲操作下的亚毫米输出功率。我们还证明了从RT CW操作下的GAN基板上制造的基于352 nm的基于Inalgan的LED的高输出功率为7.4 MW。 352 nm基于Inalgan的LED的最大外部量子效率（EQE）为1.1％，这是具有最高发射几何形状的350 nm波段UV LED获得的最高EQE。从这些结果中，揭示了使用第四纪inalgan在300-350nm频段紫外发射器中的优势。