Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices

超小型 IV 族半导体器件制造过程中的 Langmuir 吸附和反应控制

基本信息

批准号：
08405022
负责人：
MUROTA Junichi
金额：
$ 7.1万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08405022/
关键词：
Langmuir-type Adsorption and Reaction Group IV Semiconductor Ultrasmall Devices Atomic-Layer Growth Atomic-Layer Etching Impurity Doping Hydrogen Termination Low-Temperature Heteroepitaxial Growth 表面処理

项目摘要

In this scientific research, to establish fabrication process technology of ultrasmall group IVsemiconductor devices, extended researches have been carried out including fundamentals and applications of Langmuir-type adsorption/reaction process such as atomic-layer growth and etching. As to atomically controlled processing, by utilizing a low-temperature ultraclean reaction atmosphere, flash heating by Xe lamps, and low-energy ion irradiation by an ECR plasma, we have achieved atomic layer-by-layer growth of Si and Ge, atomic-layer nitridation of Si by NH_3 at 400ﾟC, atomic-layer carbonization of Si(100) by CH_4 at 500-600ﾟC, atomic-layer adsorption of SiH3CH3 on Si and Ge, atomic-layer doping of P on Si and Ge, fractional atomic-layer etching of a SiGe system, atomic-layer role-share etching of silicon nitride, etc. Adsorption and reaction process in low temperature selective deposition of W has been also investigated by alternate supply of WF6 and SiH_4. Each of these atomic-order processes has been described by Langmuir-type simple adsorption and reaction formalism, which contributes to establish a base of a high precision control of the process. As to device fabrication process, we have fabricated ultrasmall MOSFETs utilizing super-self-aligned ultrashallow junction formation in the source/drain region, and MOSFETs with a SiGe epitaxial layer as a channel. Also, we have developed each process such as selective epitaxy of SiGe and in-situ heavy doping with P and B, highly selective anisotropic etching of heavily doped polysilicon, reduction of source/drain resistance by selective growth of W, as well as a total ultrasmall device process by combination of these individual processes. These research results supply a fundamental key to ultrasmall device fabrication technology with group IVsemiconductors.

在这项科学研究中，为建立超大群IVSemicDuctor设备的制造过程技术，已经进行了扩展研究，包括Langmuir-Type的基本原理和应用，增加了吸附/反应过程，例如原子 - 层的生长和蚀刻。 As to atomically controlled processing, by utilizing a low-temperature ultraclean reaction atmosphere, flash heating by Xe lamps, and low-energy ion irradiation by an ECR plasma, we have achieved atomic layer-by-layer growth of Si and Ge, atomic-layer nitridation of Si by NH_3 at 400ﾟC, atomic-layer carbonization of Si(100) by ch_4在500-600 c c，si和ge对SiH3CH3的原子层吸附，p上的P上的原子层掺杂，对Si和ge上的P上的原子掺杂，SIGE系统的分数原子层蚀刻，原子层的作用避难所的硅质作用和反应的作用。 WF6和SIH_4。 Langmuir-type简单吸附和反应形式描述了这些原子阶过程中的每一个，这有助于建立对过程的高精度控制的基础。关于设备制造过程，我们已经制造了超质的MOSFET，该MOSFET利用源/排水区域中的超拟合超柔糖连接形成，以及带有sige外生层作为通道的MOSFET。此外，我们已经开发了每个过程，例如SIGE的选择性外观和P和B的原位重掺杂，高度选择性的各向异性蚀刻量高掺杂多掺杂的多型多硅烷，通过W W的选择性生长来降低源/漏极的抗性，以及通过这些单独的过程组合的总超级设备过程。这些研究结果提供了使用IVSemedDuctors组的Ultrasmall设备制造技术的基本密钥。