Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices

超小型 IV 族半导体器件制造过程中的 Langmuir 吸附和反应控制

基本信息

批准号：
08405022
负责人：
MUROTA Junichi
金额：
$ 7.1万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08405022/
关键词：
Langmuir-type Adsorption and Reaction Group IV Semiconductor Ultrasmall Devices Atomic-Layer Growth Atomic-Layer Etching Impurity Doping Hydrogen Termination Low-Temperature Heteroepitaxial Growth 表面処理

项目摘要

In this scientific research, to establish fabrication process technology of ultrasmall group IVsemiconductor devices, extended researches have been carried out including fundamentals and applications of Langmuir-type adsorption/reaction process such as atomic-layer growth and etching. As to atomically controlled processing, by utilizing a low-temperature ultraclean reaction atmosphere, flash heating by Xe lamps, and low-energy ion irradiation by an ECR plasma, we have achieved atomic layer-by-layer growth of Si and Ge, atomic-layer nitridation of Si by NH_3 at 400ﾟC, atomic-layer carbonization of Si(100) by CH_4 at 500-600ﾟC, atomic-layer adsorption of SiH3CH3 on Si and Ge, atomic-layer doping of P on Si and Ge, fractional atomic-layer etching of a SiGe system, atomic-layer role-share etching of silicon nitride, etc. Adsorption and reaction process in low temperature selective deposition of W has been also investigated by alternate supply of WF6 and SiH_4. Each of these atomic-order processes has been described by Langmuir-type simple adsorption and reaction formalism, which contributes to establish a base of a high precision control of the process. As to device fabrication process, we have fabricated ultrasmall MOSFETs utilizing super-self-aligned ultrashallow junction formation in the source/drain region, and MOSFETs with a SiGe epitaxial layer as a channel. Also, we have developed each process such as selective epitaxy of SiGe and in-situ heavy doping with P and B, highly selective anisotropic etching of heavily doped polysilicon, reduction of source/drain resistance by selective growth of W, as well as a total ultrasmall device process by combination of these individual processes. These research results supply a fundamental key to ultrasmall device fabrication technology with group IVsemiconductors.

在这项科学研究中，建立超毛组的制造过程IVSemicDuctor设备的制造技术是通过利用低敏感的重新摄影氛围的，进行了Langmuir型吸附/反应过程的基础。由Xe Lamps D原子d原子逐层生长，Si和GE的生长，NH_3在400 C时通过NH_3的原子层氮化物，CH_4在500-600°C下通过CH_4的原子层碳化（100），原子层吸附SIH3CH3在Si和Ge ctional Atomic-Layer等上的SIGE系统，氮化硅的原子层角色份额等。还通过这些原子级过程的替代供应来研究。 Langmuir型的吸附和反应形式主义，这是基于对过程的高精度控制的，我们使用了源/排水区的超级拟合超柔性交界器，并用Mosfets制造了超级摩托SIGE外延为一个通道。。