Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier Concentration

使用超高载流子浓度的半导体结构在金属和半导体之间形成非常低的接触电阻

• 批准号: 13355013
• 负责人: MUROTA Junichi
• 金额: $ 27.71万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355013/
• 关键词: IV group semiconductor; impurity doping; atomic layer; contact resistance; CVD; SiGeC; P; B; B; IV族半導体結晶; CDV

In this research, heavily impurities (B and P) were doped in SiGeC heterostructure using atomically controlled low-pressure chemical vapor deposition (LP-CVD) in order to form a very low contact resistance between metal and semiconductor.Formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (PH_3 and B_2H_6) on Si(100) and Ge(100) have been achieved using atomically controlled ultraclean LP-CVD. Heavily impurity doped epitaxial Si films with the impurity concentration of over 10^<21>cm^<-3> are formed by an atomic-layer doping technique. By growing the multi-layer P-doped epitaxial Si with a high carrier concentration at a very low temperature of 450℃ on the P-doped SiGe films, very low contact resistivity of 6.5x10^<-8>Ωcm^2 between W and the Si film has been obtained. For the B-doped SiGeC films with a high carrier concentration, very low contact resistivity is obtained to be 3.8x10^<-8>Ωcm^2 between W and the Si film, 3x10^8<-8>Ωcm^2 between Ti and the Si film.This heavily impurity-doping technique promises to achieve very low contact resistance between metal and semiconductor for high performance semiconductor devices.

在这项研究中，使用原子控制的低压化学蒸气（LP-CVD）在Sigec异质中掺杂了严重的杂质（B和P），以形成金属和半导体之间的非常低的接触性。在Si上的氢化物气体（pH_3和B_2H_6）中的IV层或相关原子的层（100）被原子控制的超细胞LP-CVD酸痛。 21> cm^<-3>是由原子层掺杂技术形成的接触电阻为6.5x10^2 ITH高载体浓度，在Ti和Si膜之间获得非常低的接触电阻率为3.8x10^<-8>ωCM^2。高性能导管设备的金属和半导体之间的接触电阻低。

项目成果

J.Noh et al.: "Contact Resistivity between W and Heavily Doped Si_<1-x-y>Ge_xC_y Epitaxial Film"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors. Abs.No.VI-07 (2002)

J.Noh 等人：“W 与重掺杂 Si_<1-x-y>Ge_xC_y 外延膜之间的接触电阻率”第二届新型 IV 族 (Si-Ge-C) 半导体国际研讨会。

J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors"Proceedings of the 6th Symp. on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science). 107-115 (2002)

J.Murota 等人：“IV 族半导体的原子控制处理”第 6 届 Symp 会议记录。

M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM 2003). 249-250 (2003)

M.Fujiu 等人：“碳对 Ge(100) 上硅原子层热稳定性的影响”第一届国际 SiGe 技术和器件会议 (ISTDM 2003)。

D.Muto et al.: "Atomically Controlled Silane Reaction on Si(100) Using Ar Plasma Irradiation without Substrate Heating"3rd Int.Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 59-61 (2003)

D.Muto 等人：“在不加热基材的情况下使用 Ar 等离子体辐射对 Si(100) 进行原子控制的硅烷反应”第 3 届国际会议。

J.Murota et al.: "Atomically Controlled Processing for SiGe-Based Ultimate-Small Devices (Invited Paper)"22nd Electronic Materials Symp. (EMS-22), Biwako, July 2-4. 39-42 (2003)

J.Murota 等人：“基于 SiGe 的终极小型器件的原子控制处理（特邀论文）”第 22 届电子材料研讨会。