Creation of High-Carrier-Concentration and High-Mobility Artificial Crystal of Group IV Semiconductors by Atomically Controlled CVD Processing

通过原子控制 CVD 工艺制备高载流子浓度和高迁移率的 IV 族半导体人造晶体

• 批准号: 19206032
• 负责人: MUROTA Junichi
• 金额: $ 30.45万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19206032/
• 关键词: 化学気相成長(CVD); IV族半導体; 原子層積層; 原子層ドーピング; 人工結晶

N atomic-layer doping in SiGe by SiGe deposition on a thermally nitrided SiGe surface and highly concentrated P atomic-layer doping by lowering temperature of Si deposition on a P atomic layer already formed strained SiGe surface were achieved. Moreover, by lowering temperature of B and subsequent Si depositions on a Si surface, B atomic-layer doped Si with higher carrier concentration was achieved. Additionally, it was clarified that suppression of intermixing and strain relaxation by C atomic-layer doping at a strained SiGe/Si heterointerface and that, in thermal CVD of SiGe and B doped Si epitaxial films, strain significantly influences upon surface reaction, segregation, solid solubility limit and electrical activity of impurity.

通过在热氮化的SiGe表面上沉积SiGe实现了SiGe中的N原子层掺杂，以及在已经形成应变的SiGe表面上通过降低Si沉积温度来实现了高浓度的P原子层掺杂。此外，通过降低B的温度以及随后在Si表面上沉积Si，获得了具有更高载流子浓度的B原子层掺杂Si。此外，还阐明了在应变 SiGe/Si 异质界面处通过 C 原子层掺杂抑制混合和应变弛豫，并且在 SiGe 和 B 掺杂 Si 外延膜的热 CVD 中，应变对表面反应、偏析、固体杂质的溶解度极限和电活性。

项目成果

Atomically Controlled Processing in Si-Based CVD Epitaxial Growth

硅基 CVD 外延生长中的原子控制处理

• 发表时间: 2008
• 作者: J.Murota、M.Sakuraba;B.Tillack
• 通讯作者: B.Tillack

Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth

硅基 CVD 外延生长中杂质掺杂的原子控制工艺

• 发表时间: 2008
• 作者: J.Murota、M.Sakuraba;B.Tillack
• 通讯作者: B.Tillack

Instability of a SiGe/Si-hetereo-interface in hetero-channel MOSFETs due to Joule heating(Invited Paper)

焦耳热导致异质沟道 MOSFET 中 SiGe/Si 异质界面的不稳定性（特邀论文）

• 发表时间: 2007
• 作者: P.Homhuan;T.Nabatame;T.Chikyow;S.Tungasmita;J.Ohta;T. Tsuchiya
• 通讯作者: T. Tsuchiya

Adsorption and Desorption of Hydrogen on Si(100) in H_2 or Ar Heat Treatment

H_2或Ar热处理中氢在Si(100)上的吸附与脱附

• 发表时间: 2010
• 作者: A.Uto、M.Sakuraba、M.Caymax;J.Murota
• 通讯作者: J.Murota

Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)(Invited Paper)

Si(100)上外延生长的Si/应变Si_<1-x>Ge_x纳米级异质结构空穴谐振隧道二极管的制备（特邀论文）

• 发表时间: 2007
• 期刊: ECS Trans. 11
• 作者: X. Zhou;K. Uchida;H. Mizuta;S. Oda;M. Sakuraba
• 通讯作者: M. Sakuraba