Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System

用于高集成通信系统制造的SiGe系统MOS-HBT技术的开发

• 批准号: 11694123
• 负责人: MUROTA Junichi
• 金额: $ 4.86万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11694123/
• 关键词: SiGe; MOS; HBT; CVD Low-Temperature Selective Growth; in-situ Impurity Doping; SiGeC; Impurity Diffusion; High Selective Anisotropic Etching

In this scientific research, in order to realize the high speed and large capacitance mobile communication system with low working voltage and low power consumption, a new mobile communication System-On-Chip which is mainly integrated by SiGe-based MOS and HBT have been developed under the 3-year-plan from 1999 with the co-work of the Innovation for High Performance Microelectronics (IHP), Germany. In the last year of the 3 years, the study on the ultra-small structure formation of SiGe and the ultra-high speed mobile-communication device fabrication was conducted. The study on the ultra-small SiGe structure formation includes the realization of the exact control of impurity-doped SiGe(C) thin film deposition, of the exact anisotropy etching control of ultra-small structure SiGe(C)-based semiconductor, of the integration of the adsorption/reaction constant for source gas molecules in CVD process, of the database development of the atomic layer growth and the atomic layer plasma process … More , of the heavily P-doped semiconductor, and of atomic order nitridation and atomic order nitrogen doping control. Moreover, the study on the ultra-high speed device fabrication includes the development and the investigation of highly controllable process technology, of ultra-large scale integrated circuit fabrication process, of the ultra-high speed device structure, and the evaluation of the fabricated devices. From these studies, especially, the CMOS applicability of 0.1-μm MOSFETs with super self-aligned ultra-shallow junction formed by selective B-doped SiGe epitaxy, the excellent low frequency noise characteristics of SiGe-channel pMOSFET, the device fabrication process and the structure of 100GHz-HBT, the metallization technology with ultra-low contact resistance, and the exact control of B- or P-doped SiGe(C) epitaxial growth have been reported. Furthermore, highly exact evaluation process of the ultra-small SiGe(C) structure, which is extremely important to device application, was developed. Less

在这项科学研究中，为了实现高速和大电容移动通信系统的工作电压低和低功耗，一种新的移动通信系统在芯片上主要由SIGE基于SIGE的MOS和HBT整合到1999年的3年计划下，从1999年开始，与高性能微型绩效的创新合作，用于高性能的微型绩效微电机（IHP）。在三年的最后一年中，进行了有关SIGE超小结构形成和超高速度移动通信装置制造的研究。 The study on the ultra-small SiGe structure formation includes the realization of the exact control of impurity-doped SiGe(C) thin film deposition, of the exact anisotropy etching control of ultra-small structure SiGe(C)-based semiconductor, of the integration of the addorption/reaction constant for source gas molecules in CVD process, of the database development of the atomic layer growth and the atomic layer血浆过程…更多的是p掺杂的半导体，以及原子阶氮和原子秩序氮掺杂控制。此外，对超高速度设备制造的研究包括高度控制过程技术的开发和投资，超大尺度集成电路制造工艺，超高速度设备结构以及制造设备的评估。 From these studies, especially, the CMOS applicationability of 0.1-μm MOSFETs with super self-aligned ultra-shallow junction formed by selective B-doped SiGe epitaxy, the excellent low frequency noise characteristics of SiGe-channel pMOSFET, the device fabrication process and the structure of 100GHz-HBT, the metallization technology with ultra-low contact resistance, and the exact control of B- or P-doped SiGe(C)已经报道了外延生长。此外，开发了对设备应用非常重要的超小SIGE（C）结构的高度精确评估过程。较少的

项目成果

D. Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys.. Vol. 40, No. 4B. 2697-2700 (2001)

D.Lee等人：“使用SiH_4GeH_4-CH_3SiH_3-PH_3-H_2气体系统通过低压化学气相沉积在Si_<1-x-y>Ge_xC_y外延生长中掺杂磷”Jpn。

Y. Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Proceedings of the 15th International Conference on Chemical Vapor Deposition: CVD XV, (M. D. Allendorf, T. M. Bessman, M. L. Hitchman, M. Robinson, Y. Shimogaki, F. Teyssa

Y. Yamamoto等人：“选择性W-CVD中Si和SiO_2上的WF_6的表面吸附”第15届化学气相沉积国际会议论文集：CVD XV，（M. D. Allendorf，T. M. Bessman，M. L. Hitchman，M. Robinson，

J. Murota et al.: "Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices"Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on De

J. Murota 等人：“用于制造硅基终极小型器件的原子控制处理”应用于 ULSI 技术的选择性和功能薄膜沉积技术研讨会（第 29 届 IUVSTA 研讨会），第二届国际研讨会

J. Murota et al.: "CVD Si_<1-x>Ge_x Epitaxial Growth and Its Application to MOS Devices (Invited paper)"Proceedings of the SPIE Conference on Microelectronic Device Technology III, The International Society for Optical Engineering, Santa Clara, California

J. Murota 等人：“CVD Si_<1-x>Ge_x 外延生长及其在 MOS 器件中的应用（特邀论文）”，国际光学工程学会微电子器件技术 III 会议论文集，圣克拉拉，

T. Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"197th Meeting of the Electrochemical Society, Toronto, Canada, May 14-18. Abs. No. 294. (2000)

T. Kanetsuna 等人：“使用 ECR 等离子体在杂质掺杂硅上进行氯的表面吸附和反应”电化学协会第 197 届会议，加拿大多伦多，5 月 14 日至 18 日。