A STUDY OF ULTRASMALL DEVICE CONTAINING NANOMETER-CONTROLLED Si-Ge HETEROLAYER

含纳米控制Si-Ge异质层的超小型器件的研究

基本信息

批准号：
04452167
负责人：
MUROTA Junichi
金额：
$ 3.71万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452167/
关键词：
Silicon Silicon-Germanium Heterostructure Heterodevice Ultrasmall Device CVD MOSFET

项目摘要

The object of this research is to construct the fabrication process of a high performance ultrasmall device containing nanometer controlled Si_<1-x>Ge_x heterolayr. The research results are summarized as follows.(1) A very low-temperature epitaxial growth process of the Si/Si_<1-x>Ge_x/Si heterostructure with atomically flat surfaces and interfaces for Ge fractions on Si(100) has been achieved under the cleanest possible reaction and interfaces for Ge fracions on Si(100) has been achieved under the cleanest possible reaction environment of SiH_4, GeH_4 and H_2 or Ar using an ultraclean hot-wall low-pressure CVD system. A relatively lower deposition temperatures were suitable for higher Ge fractions in order to prevent island growth of thelayrs during deposition. Atomically flat surfaces and interfaces for the heterostructure containing Si_<0.8>Ge_<0.2>, Si_<0.5>Ge_<0.5> and Si_<0.3>Ge_<0.7> layrs were obtained by deposition at 550, 500 and 450ﾟC, respectively.(2) MOSFET's were fabricated at temparetures below 700ﾟC on the 10nm-thick Si/7nm-thick Si_<1-x>Ge_x/Si heterostructure using a self-alligned Si gate process. A high performance Si_<0.5>Ge_<0.5>-channel MOSFET has been achieved with a large mobility enhancement of about 70% at 300K and over 150% at 77K compared with that of a MOSFET without SiGe-channel.(3) In-situ B doping control of Si_<1-x>Ge_x layr was achieved in the range of 3x10^<17>-2x10^<20>cm^<-3>. It was found that Hall mobility has a minimum value for Si_<0.75>Ge_<0.25> film, and the mobility of the strained Si_<0.75>Ge_<0.25> film is neary equal to that of the unstrained one.(4) In-sity B doped selective SiGe epitaxial growth were achieved at 550ﾟC.Using this selective film, high performance self-aligned ultrashallow junction was formed with a low level reverse current density, the range of 10^<-10>A/cm^2. As a result, the overlap control between gate and source/drain and suppression of short channel effects in ultrasmall MOSFET can be improved.

构造的对象fagh性能超级设备控制的Si_ <1-x> terolayr。在SIH_4，GEH_4和H_2的最清洁反应下，Si（100）上的GE缝隙的界面已被酸痛或AR UltraClean热壁低压CVD系统。沉积过程中的thelayr。低于10nm厚的Si/7nm厚的Si_ <1-X> GE_X/SI异源，使用自符号SI GATE在3x10^<20>的范围内，在300K时以300K和77K时的150％超过150％的增强了Si_ <1x> ge_x layr的兴奋剂（3）含量为si_ <1x> ge_x> ge_x> cm^<-3>。 - 与水平的电流密度形成一致的超柔性连接，将10> a/cm^2的范围作为结果。