Exploring the functionality of Al-catalyzed Si nanowires

探索铝催化硅纳米线的功能

• 批准号: 22K04885
• 负责人: J. Wipakorn
• 金额: $ 2.66万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2022
• 资助国家: 日本
• 起止时间: 2022-04-01 至 2025-03-31
• 项目状态: 未结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22K04885/
• 关键词: Nanowire; Nanostructure; Vapor-liquid-solid; CVD; Aluminum; Silicon; Nanowires; Germanium; Heterojunction

Al-catalyzed Si nanowires (NWs) formed by vapor-liquid-solid growth for high mobility field-effect transistor (HEMT) and photovoltaic cell applications were parallelly investigated. Successfully addressing the major challenge of rapid Al catalyst oxidation by ex-situ and uncomplicated growth conditions allows for the potential to scale up the process while preventing the formation of deep-level traps resulting from catalyst contamination.Al-catalyzed SiNWs grown on paper-thin polished and etched Si(111) wafers of 100 um- and 60 um-thick with high proficiency for minimizing interfacial defects and light absorption loss has been accomplished. Deep wet etching was observed as a simple technique for thin Si wafer preparation compared to the standard method of polishing by diamond slurry. Fabrication of thin Si NW solar cells with homojunction structure toward enhanced power conversion efficiency by hybrid nanostructures with Mn-doped CsPbCl3 perovskite nanocrystals using a simple drop-casting method has been optimized.Hole-gas accumulation of Si/Ge core-shell NW heterostructures using Al-catalyst for core SiNW synthesis was successfully demonstrated. Type-II band alignment of p-type Si and intrinsic Ge heterojunction has been designed for induced hole-gas accumulation in the Ge channel to suppress impurity and surface scattering. The unique characteristics of controllable vertical growth and smooth surface with automated Al doping in Al-catalyzed SiNWs grant major advantages for the application of vertical SiNW-based HEMT devices.

研究了高催化的SI纳米线（NWS），该溶液液生长为高迁移率晶体效应晶体管（HEMT）和光伏细胞的应用而形成。成功地解决了通过前置和简单生长条件快速催化剂氧化的主要挑战，可以使可能扩大该过程的扩展，同时防止由催化剂污染产生的深层陷阱形成。催化的sinws在纸张上生长的是在纸张上生长的，并在薄薄的抛光和蚀刻的si（111）中的较高的范围（111）的水平（111）的范围（111）的水平范围内，并相互挑战。吸收损失已实现。与通过钻石浆料的标准抛光方法相比，深湿蚀刻被视为一种简单的Si晶片制备技术的简单技术。使用简单的液压剂量使用简单的滴剂铸造方法优化了使用MN掺杂的CSPBCL3 perovskite纳米晶体，以杂交纳米结构来提高功率转化效率，以提高功率转化效率。使用简单的滴剂量铸造方法已优化。SI/GEERE CORE-SHELL NW NW杂物的核心合成器的成功积累。 P型Si的II型条带对齐和内在的GE异质结已设计用于在GE通道中诱导的孔气体积累，以抑制杂质和表面散射。可控制的垂直生长和光滑表面的独特特征，自动化的Al掺杂在Al催化的Sinws中授予了应用垂直SINW的HEMT设备的主要优势。

项目成果

Al-Catalyzed Si Nanowire Formation on Pre-Etched and Post-Polished Thin Si Substrates for Photovoltaic Application

用于光伏应用的预蚀刻和后抛光薄硅基板上铝催化硅纳米线的形成

• 发表时间: 2022
• 作者: 関戸竜也;麻田俊雄;小関史朗;Wipakorn Jevasuwan and Naoki Fukata
• 通讯作者: Wipakorn Jevasuwan and Naoki Fukata

Energy transfer performances of nanocrystal quantum-dots for Si nanowire-based photovoltaic applications

用于基于硅纳米线的光伏应用的纳米晶体量子点的能量传输性能

• 发表时间: 2022
• 作者: Wipakorn Jevasuwan;Mohammed Abdelhameed;Mostafa F. A. Abdelbar;Naoki Fukata
• 通讯作者: Naoki Fukata

Hybrid Nanostructures of Al-Catalyzed Si Nanowires and Mn-doped Perovskite CsPbCl3 Nanocrystals for Thin Si Nanowire-based Photovoltaic cells

用于薄硅纳米线光伏电池的铝催化硅纳米线和锰掺杂钙钛矿 CsPbCl3 纳米晶体的混合纳米结构

• 发表时间: 2022
• 作者: Wipakorn Jevasuwan;Bern Yu Jeco-Espaldon;Mostafa Abdelbar;Qinqiang Zhang;Mohammed Abdelhameed;Naoki Fukata
• 通讯作者: Naoki Fukata