Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor Heterostructures

用原子控制的 IV 族半导体异质结构制造人造晶体

基本信息

批准号：
15206031
负责人：
MUROTA Junichi
金额：
$ 31.87万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206031/
关键词：
group-IV semiconductor heterostructure atomic layer growth artificial crystal chemical vapor deposition epitaxial growth SiGeC 3-dimensional structure MBE

项目摘要

Purpose of this project is development of atomic layer-by-layer growth process for various kinds of hetero materials (e.g. Si, Ge, C and etc.) and creation of artificial crystal with atomically-controlled group-IV semiconductor heterostructures by using our established techniques of Langmuir-type adsorption and reaction control in chemical vapor deposition. It is found that atomic-order ultrathin film of C and N on Si-Ge group-IV semiconductor surface and subsequent Si epitaxial film on the surface at low temperature can be formed. This result enables to realize an atomic-layer doped group-IV semiconductor heterostructure. It is also found that, by C introduction, thermal stability of a Si atomic layer on Ge surface is improved and critical thickness of strained Si_<1-x>Ge_x epitaxial film on Si(100) is increased. In the case of Si epitaxial growth on the P atomic layer formed on strained Si_<1-x>Ge_x/Si(100), surface segregation phenomenon is effectively suppressed by use of Si_2H_6 instead of SiH_4 as a reactant gas, and maximum P atom concentration exceeds far above 10^<21>cm^<-3> at the heterointerface of Si_<1-x>Ge_x/Si. By using surface reaction enhancement under low-energy ECR Ar plasma irradiation, high quality epitaxial growth of atomic-order flat Si and strained Ge films without substrate heating is realized. Atomic-order nitridation control and subsequent Si epitaxial growth on the nitrided surface are also realized by the plasma process, and maximum N atom concentration reaches about 2x10^<21>cm^<-3> (atomic ratio of 4%) in the 2nm-thick ultrathin buried region. It is found that highly strained 1nm-thick Ge films can be epitaxially grown on Si(100). These results are very useful for realization of the high quality multilayer film with atomically-controlled group-IV semiconductor heterostructures.

该项目的目的是开发各种异质材料（如Si、Ge、C等）的原子逐层生长工艺，并利用我们已建立的IV族半导体异质结构制造具有原子控制的IV族半导体异质结构的人造晶体。化学气相沉积中朗缪尔型吸附和反应控制技术。发现可以在低温下在Si-Ge IV族半导体表面形成C和N的原子级超薄膜以及随后在表面形成的Si外延薄膜。这一结果使得能够实现原子层掺杂的IV族半导体异质结构。还发现，通过C的引入，提高了Ge表面Si原子层的热稳定性，并增加了Si(100)上应变Si_<1-x>Ge_x外延膜的临界厚度。在应变Si_<1-x>Ge_x/Si(100)上形成的P原子层上进行Si外延生长时,采用Si_2H_6代替SiH_4作为反应气体,有效抑制了表面偏析现象,且最大的P原子Si_<1-x>Ge_x/Si异质界面处的浓度远超过10^21cm^-3>。利用低能ECR Ar等离子体辐照下的表面反应增强，实现了无需衬底加热的原子级平坦Si和应变Ge薄膜的高质量外延生长。原子级氮化控制和后续氮化表面Si外延生长也通过等离子体工艺实现，2nm时最大N原子浓度达到约2x10^<21>cm^<-3>（原子比为4%） -厚超薄掩埋区域。研究发现，可以在Si(100)上外延生长高应变的1nm厚的Ge薄膜。这些结果对于实现具有原子控制的IV族半导体异质结构的高质量多层薄膜非常有用。