Development of Atomically Controlling CVD Apparatus for Fabrication of Si-Based Superlattice Devices

用于制造硅基超晶格器件的原子控制CVD设备的开发

基本信息

批准号：
07555409
负责人：
MUROTA Junichi
金额：
$ 2.11万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555409/
关键词：
Atomically Controlling CVD Si-Based Superlattice Devices Flash Heating CVD Plasma Surface Treatment Ultra small Devices Impurity Doping Low Temperature Selective Deposition of W Langmuir-type Adsorption 超微細MOSFET ド-ピング制御 Si極薄窒化膜

项目摘要

In this scientific research, to develop ultimate ultra small structure process technology, we have aimed at establishing the Si-based atomically controlling CVD technology which is applicable for device fabrication and in which atomic layr mixing is suppressed by combining a flash heating CVD method and surface treatment with plasma irradiation etc.Moreover, we have investigated elucidation and formulation of low temperature surface adsorption and reaction process of Si-Ge-C,Si-N and W systems.As to the Si-Ge system, we have achieved atomic layr-by-layr growth of Si and Ge, and fabricated double-barrier resonant tunneling diodes and observed negative resistance. Moreover, in high concentration impurity doping of P and B into SiGe, we have discussed and formulated the adsorption and reaction process by modified Langmuir-type equations considering the surface bond sites. As to the Si-C system, we have achieved atomic-layr carbonization of Si (100) by CH_4 at 500-600ﾟC and clarified that … More the carbon amount depends on the surface impinging CH_4 molecules based on Langmuir-type equations. As to the Si-N system, we have achieved atomic-layr nitridation of Si (100) by NH_3 at 400ﾟC and clarified that the nitrogen amount depends on Langmuir-type adsorption and reaction equations considering desorption. As to low temperature selective deposition mechanism of W is also discussed based on the surface treatment by a preheating method and alternating supply of WF_6 and SiH_4 Furthermore, by using an ECR plasma, we achieved atomic-layr etching of Si, Ge, SiGe and silicon nitride and analyzed the adsorption and reaction process by considering Langmuir-type simple formalism.Atomically controlling CVD of Si, Ge, etc., is increasingly important technology, because of compatibility with integrated circuits and also because it has potential application to create artificial atomic stacking structures similar to the compound semiconductor structure by using the group IV elements which have been used as an elemental semiconductor. The success of this research project supplies a fundamental key to ultra small device fabrication technology with group IV semiconductors. Less

在这项科学研究中，为了开发终极超微结构工艺技术，我们的目标是建立适用于器件制造的硅基原子控制CVD技术，通过将闪速加热CVD方法与表面相结合来抑制原子层混合。此外，我们还研究了Si-Ge-C、Si-N和W体系的低温表面吸附和反应过程的阐明和公式化。对于Si-Ge体系，我们实现了我们还研究了Si和Ge的原子层生长，制作了双势垒谐振隧道二极管并观察了负电阻，并且在SiGe中高浓度掺杂P和B时，我们讨论并制定了吸附和反应过程。考虑表面键位的修正Langmuir型方程对于Si-C体系，我们在CH_4下实现了Si（100）的原子层碳化。 500-600°C，并根据Langmuir型方程阐明了碳含量取决于表面撞击的CH_4分子。对于Si-N系统，我们在100℃下实现了NH_3对Si(100)的原子层氮化。 400℃，并阐明了氮量取决于考虑解吸的 Langmuir 型吸附和反应方程。还讨论了基于预热方法和WF_6和SiH_4交替供给的表面处理此外，利用ECR等离子体实现了Si、Ge、SiGe和氮化硅的原子层刻蚀，并分析了吸附和反应过程考虑到朗缪尔型简单形式主义。硅、锗等的原子控制 CVD 正变得越来越重要，因为它与集成电路兼容，也因为它具有创建人造原子的潜在应用该研究项目的成功为IV族半导体的超小型器件制造技术提供了基础关键。