Development of Atomically Controlling CVD Apparatus for Fabrication of Si-Based Superlattice Devices

用于制造硅基超晶格器件的原子控制CVD设备的开发

• 批准号: 07555409
• 负责人: MUROTA Junichi
• 金额: $ 2.11万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555409/
• 关键词: Atomically Controlling CVD; Si-Based Superlattice Devices; Flash Heating CVD; Plasma Surface Treatment; Ultra small Devices; Impurity Doping; Low Temperature Selective Deposition of W; Langmuir-type Adsorption; 超微細MOSFET; ド-ピング制御; Si極薄窒化膜

In this scientific research, to develop ultimate ultra small structure process technology, we have aimed at establishing the Si-based atomically controlling CVD technology which is applicable for device fabrication and in which atomic layr mixing is suppressed by combining a flash heating CVD method and surface treatment with plasma irradiation etc.Moreover, we have investigated elucidation and formulation of low temperature surface adsorption and reaction process of Si-Ge-C,Si-N and W systems.As to the Si-Ge system, we have achieved atomic layr-by-layr growth of Si and Ge, and fabricated double-barrier resonant tunneling diodes and observed negative resistance. Moreover, in high concentration impurity doping of P and B into SiGe, we have discussed and formulated the adsorption and reaction process by modified Langmuir-type equations considering the surface bond sites. As to the Si-C system, we have achieved atomic-layr carbonization of Si (100) by CH_4 at 500-600ﾟC and clarified that … More the carbon amount depends on the surface impinging CH_4 molecules based on Langmuir-type equations. As to the Si-N system, we have achieved atomic-layr nitridation of Si (100) by NH_3 at 400ﾟC and clarified that the nitrogen amount depends on Langmuir-type adsorption and reaction equations considering desorption. As to low temperature selective deposition mechanism of W is also discussed based on the surface treatment by a preheating method and alternating supply of WF_6 and SiH_4 Furthermore, by using an ECR plasma, we achieved atomic-layr etching of Si, Ge, SiGe and silicon nitride and analyzed the adsorption and reaction process by considering Langmuir-type simple formalism.Atomically controlling CVD of Si, Ge, etc., is increasingly important technology, because of compatibility with integrated circuits and also because it has potential application to create artificial atomic stacking structures similar to the compound semiconductor structure by using the group IV elements which have been used as an elemental semiconductor. The success of this research project supplies a fundamental key to ultra small device fabrication technology with group IV semiconductors. Less

在这项科学研究中，为了开发最终的超小结构过程技术，我们旨在建立基于SI的原子控制CVD技术，该技术适用于设备制造，并且通过将flash加热的CVD方法和表面处理结合使用，可以抑制原子LAYR混合，并与等离子体辐射等表面处理。系统。作为Si-GE系统，我们已经实现了Si和GE的原子序列生长，并制造了双屏障谐振隧道演讲并观察到负电阻。此外，在高浓度的杂质掺杂p和b中，我们已经通过改进的langmuir型方程来讨论并制定了添加吸附和反应过程，请考虑表面键位点。至于SI-C系统，我们在500-600 c c _4通过CH_4实现了Si（100）的原子 - layr碳化，并澄清了……更多的碳量取决于基于Langmuir型方程的CH_4分子的表面。至于Si-N系统，我们在400°C下通过NH_3实现了Si（100）的原子 - layr硝化化，并澄清了氮量取决于langmuir-type的吸附和反应方程，并考虑了考虑解吸的反应方程。关于低温选择性沉积机制，还基于表面处理来讨论WF_6和SIH_4的替代供应，此外，通过使用ECR血浆，我们实现了Si，ge，ge，sige和sige和silicon nitride的原子 - layr蚀刻，并通过添加了氮化和反应过程，并考虑了通过添加了反应。 SI，GE等的CVD是越来越重要的技术，因为与集成电路的兼容性，并且还具有潜在的应用来创建与复合半导体结构相似的人工原子堆叠结构，该结构通过使用已用作元素半导体的组IV元素。该研究项目的成功为超小型设备制造技术提供了IV组半导体的基本密钥。较少的

项目成果

C.J.Lee, at al: "Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD" CVD XIV. PV97-25. 1356-1363 (1997)

C.J.Lee 等人：“使用超净 LPCVD 的 SiH_4-GeH_4-PH_3 气体系统中的磷掺杂对 Si_<1-x>Ge_x 外延薄膜生长的影响”CVD XIV。

K. Goto, J. Murota, F. Honma, T. Matsuura, and Y. Sawada: "A Super Self-Aligned Ultrashallow Junction Formation Using Selective Si_<1-x>Ge_x CVD in Deep-Submicron MOSFET's Fabrication" Proceedings of the 5th International Symposium on Ultra Large Scale In

K. Goto、J. Murota、F. Honma、T. Matsuura 和 Y. Sawada：“在深亚微米 MOSFET 的制造中使用选择性 Si_<1-x>Ge_x CVD 形成超级自对准超浅结”论文集

T. Watanabe, M. Sakuraba, J. Murota, T. Matsuura and Y. Sawada: "Single Atomic-Layer Growth of Si on Ge Using SiH_4" 13th International Vaccum Congress(IVC-13), 9th International Conference on Solid Surfaces(ICSS-9). EM3-tuA-8 (1995)

T. Watanabe、M. Sakuraba、J. Murota、T. Matsuura 和 Y. Sawada：“使用 SiH_4 在 Ge 上单原子层生长 Si”第 13 届国际真空大会（IVC-13）、第 9 届国际固体表面会议（

Y. Yamamoto, J. Murota, K. Tsukahara and Y. Sawada: "Low-Temperature Selective Growth of W Using an LPCVD System" 13th International Vacum Congress(IVC-13), 9th International Conference on Solid Surfaces(ICSS-9). EM5-weA-6 (1995)

Y. Yamamoto、J. Murota、K. Tsukahara 和 Y. Sawada：“使用 LPCVD 系统进行 W 的低温选择性生长”第 13 届国际真空大会(IVC-13)、第 9 届国际固体表面会议(ICSS-9)

Y. Yamamoto, T. Matsuura, and J. Murota: "Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System" 13th International Conference on Chemical Vapor Deposition. (印刷中). (1996)

Y. Yamamoto、T. Matsuura 和 J. Murota：“使用 WF_6-SiH_4 气体系统在极低温度下选择性生长 W”第 13 届国际化学气相沉积会议（1996 年）。