Processins Technology of High Density Interconnection Bumps

高密度互连凸块加工技术

• 批准号: 09650773
• 负责人: KONDO Kazuo
• 金额: $ 2.18万
• 依托单位: Okayama University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650773/
• 关键词: Packaging; Electronics; High density interconnection; Current distribution; Electrodeposition; Bumpping

Packaging is the main technology to miniaturize the electronics devices such as personal computer and celler phone. Bump is indispensable interconnection method. The shape evolution mechanism of these bumps has been discussed based on the current distribution.1 Bump shapes with photo resist angle The mass transfer is controlled by diffusion for the Peclet number of 1.31. The mass transfer is concentrated at the cathode corner. The negative photo resist angle, 0, prevents this mass transfer and decrease current density at the cathode corner. The mass transfer is controlled by convection for the Peclet number of 1407. The vortices form both at upper and lower edge of the cathode corners. The negative 0 enlarges the vortices and decreases the current at the cathode corners.2 Bump shapes at high Peclet numbers The two vortices start to merge into one for Pe=73 11. A large single vortex form for P=44500. This large single vortex increases the current at the cathode center.3 Bump shapes with high aspect ratio The current distribution at diffusion control is analyzed with high aspect ratio cavity. The current distribution becomes symmetric with a sharp peak for larger aspect ratio. The convection outside of the cavity does not stir their inside.4 High aspect ratio bumps for CSP The lower edge of bump enlarges with increase of cathode placement angle for the cavity of 1.0 aspect ratio. A large vortex forms outside of the cavity because of the natural convection at the cathode. The vortex again flows into the cavity and collides with the bump lower edge.5 Bump shapes with additive and the application -The bumps with hump on the surroundings traps more number of conductive particles and increase the electric properties. An additive of selenic acid is effective and this additive can be explained by the Wagner number and secondary current distribution.

包装是将电子设备（例如个人计算机和Celler手机）微型化的主要技术。凹凸是必不可少的互连方法。这些凸起的形状演化机理已根据当前分布进行了讨论。1具有光抗角的凸起形状由质量转移的质量转移受到peclet数量为1.31的扩散。传质集中在阴极角。负照片阻力为0，防止了这种传质，并在阴极角下降了电流密度。传质通过对流的1407的对流控制。涡流在阴极角的上和下边缘形成。负0扩大了涡流并减少阴极角处的电流。2高脚的凹凸形状数字在PE = 73 11中开始合并为一个。p = 44500。这种大型的单个涡流增加了阴极中心处的电流。3具有高纵横比的凹凸形状用高纵横比腔分析扩散控制处的电流分布。电流分布变为对称，较大的纵横比具有尖峰。腔外部的对流不会搅动其内部。4高纵横比凸起CSP的凸起下边缘增大，而阴极的位置角度增加了1.0纵横比。由于阴极的自然对流，在腔外形成了大型涡流。涡流再次流入腔体，并与凸起的下边缘碰撞。5带添加剂和应用的凸起形状 - 周围环境上驼峰的颠簸陷阱捕获更多的导电颗粒并增加电特性。硒酸的添加剂是有效的，该添加剂可以用瓦格纳号和二次电流分布来解释。

项目成果

近藤和夫: "表面実装と微細電気化学工学" ケミカルエンジニヤリング. 1. 30-35 (1998)

Kazuo Kondo：“表面安装和微电化学工程”化学工程 1. 30-35 (1998)。

Kazuo Kondo: "Shape Evolution of Electrodeposited Bumps with Photo Resist Angle" Proc.ECS. PV-97-27. 346-351 (1997)

Kazuo Kondo：“具有光刻胶角度的电镀凸块的形状演变”Proc.ECS。

K.Kondo, K.Fukui, M.Yokoyama and K.Shinohara: "shape Evolution of Electrodeposited Copper Bumps with High Peclet Numbers" J.of Electrochem,Soc.144. 466-470 (1997)

K.Kondo、K.Fukui、M.Yokoyama 和 K.Shinohara：“高佩克莱特数电解铜凸块的形状演变”J.of Electrochem，Soc.144。

Kazuo Kondo and Keisuke Fukui: "Shape Evolution of Electrodeposited Bumps with Deep Cavity" Journal of the Electrochemical Society. 145. 3007-3011 (1998)

Kazuo Kondo 和 Keisuke Fukui：“深腔电镀凸块的形状演化”电化学学会杂志。

Kazuo Kondo and Keisuke Fukui: "Shape Evolution of Electrodeposited Bumps-Optimum Resist Angle to Prevent Side Bumping" IMC Proceedings. 209-214 (1997)

Kazuo Kondo 和 Keisuke Fukui：“电镀凸块的形状演变 - 防止侧面凸块的最佳电阻角度”IMC 会议记录。