A STUDY ON ELECTRIC CHARGE/LEVEL CHARACTERIZATION DEVICES FOR BIOLOGICAL MATERIALS WITH METAL/MICRO-GAP/SEMICONDUCTOR ARRAYS

金属/微间隙/半导体阵列生物材料电荷/液位表征装置的研究

基本信息

  • 批准号:
    22360125
  • 负责人:
  • 金额:
    $ 11.81万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2010
  • 资助国家:
    日本
  • 起止时间:
    2010-04-01 至 2014-03-31
  • 项目状态:
    已结题

项目摘要

The electrical sensing of deoxyribonucleic acid hybridization by capacitance-voltage measurements of metal/micro-gap/insulator/semiconductor structure devices has been demonstrated. The hybridization of deoxyribonucleic acid has been characterized from the shift of the capacitance-voltage curve for the sensing device. It has been demonstrated that a metal/micro-gap/insulator/semiconductor structure device can distinguish between deoxyribonucleic acid hybridization and un-hybridization. The electrical sensing operation of pure water by capacitance-voltage measurements of a metal/micro-gap/insulator/semiconductor array has been demonstrated.
已经证明了金属/微隙/绝缘子/半导体结构设备的电容 - 电压测量值对脱氧核糖核酸杂交的电感应。脱氧核糖核酸的杂交已从传感器的电容 - 电压曲线的变化中表征。已证明金属/微隙/绝缘子/半导体结构装置可以区分脱氧核糖核酸杂交和非杂交。已经证明了金属/微间隙/绝缘体/半导体阵列的电容 - 电压测量值的纯水传感操作。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Non-FET electrochemical DNA detection using metal-gap-oxide-silicon structures
使用金属间隙氧化物硅结构的非 FET 电化学 DNA 检测
  • DOI:
  • 发表时间:
    2012
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Kentaro Kawai;Yuichi Doi;Takashi Furukawa;Junichi Uchikoshi;Kenta Arima;and Mizuho Morita
  • 通讯作者:
    and Mizuho Morita
Sensing of DNA Solution by Silicon-Oxide-Gap-Oxide-Silicon Structure
通过二氧化硅-间隙-氧化物-硅结构传感 DNA 溶液
  • DOI:
  • 发表时间:
    2010
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Taiji Kamiya;Ryuta Yamada;Junichi Uchikoshi;Kenta Arima and Mizuho Morita
  • 通讯作者:
    Kenta Arima and Mizuho Morita
Efficient and Scalable Liquid Handling in Micro/Nano-fluidic System for biomedical applications
用于生物医学应用的微/纳米流体系统中的高效且可扩展的液体处理
  • DOI:
  • 发表时间:
    2013
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Kentaro Kawai;Junichi Uchikoshi;Kenta Arima;and Mizuho Morita
  • 通讯作者:
    and Mizuho Morita
Electrical Characteristics of Metal-Gap-Oxide-Silicon Structures
金属-间隙-氧化物-硅结构的电学特性
  • DOI:
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Yuichi Doi;Takashi Furukawa;Kentaro Kawai;Junichi Uchikoshi;Kenta Arima and Mizuho Morita
  • 通讯作者:
    Kenta Arima and Mizuho Morita
Electrical Characteristics of Metal-Gap-Silicon and Metal-Gap-Oxide-Silicon Structures
金属-间隙-硅和金属-间隙-氧化物-硅结构的电学特性
  • DOI:
  • 发表时间:
    2011
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Takashi Furukawa;Yuuichi Doi;Kentaro Kawai;Junichi Uchikoshi;Kenta Arima and Mizuho Morita
  • 通讯作者:
    Kenta Arima and Mizuho Morita
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MORITA Mizuho其他文献

MORITA Mizuho的其他文献

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{{ truncateString('MORITA Mizuho', 18)}}的其他基金

A STUDY OF TUNNEL ELECTRON INJECTION LIGHT-EMITTING DEVICES WITH A TWO-DIMENSIONAL QUANTUM STRUCTURE OF ULTRATHIN SILICON/SILICON DIOXIDE
超薄硅/二氧化硅二维量子结构隧道电子注入发光器件的研究
  • 批准号:
    26630130
  • 财政年份:
    2014
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
FORMATION OF THREE-DIMENSIONAL SHAPES IN SEMICONDUCTOR SURFACES FOR FUNCTIONAL DEVICES THROUGH PHOTOCHEMICAL REACTION WITH ELECTROPHILIC FLUORINATION AGENTS
通过与亲电氟化剂的光化学反应在功能器件的半导体表面形成三维形状
  • 批准号:
    26289017
  • 财政年份:
    2014
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY OF LIGHT-EMITTING DEVICES WITH AN ULTRATHIN SILICON/SILICON DIOXIDE TWO-DIMENSIONAL QUANTUM STRUCTURE
超薄硅/二氧化硅二维量子结构发光器件的研究
  • 批准号:
    23656217
  • 财政年份:
    2011
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
A STUDY ON ENERGY LEVEL CHARACTERIZATION DEVICES FOR BIOLOGICAL MATERIALS BY ELECTRON RESPONSE OF METAL/MICRO-GAP/SEMICONDUCTOR STRUCTURES
金属/微间隙/半导体结构电子响应生物材料能级表征装置的研究
  • 批准号:
    18360148
  • 财政年份:
    2006
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON TUNNELING-SPECTROSCOPIC DEVICES WITH NANO-GAP STRUCTURE USING ULTRATHIN SILICON DIOXIDE FILM AS A SPACER
超薄二氧化硅薄膜作为间隔物的纳米间隙结构隧道分光器件的研究
  • 批准号:
    14350166
  • 财政年份:
    2002
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON REACTION MECHANISM CONTROL UNDER LIGHT IRRADIATION IN ULTRACLEAN CLEANING OR HEATING PROCESSES OF SILICON SURFACES
硅表面超净清洗或加热过程中光照射反应机理控制研究
  • 批准号:
    13555007
  • 财政年份:
    2001
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON REACTION CONTROL BETWEEN SILICON SURFACES AND OXYGEN-FREE WATER/WATER-FREE OXYGEN IN COMPLETELY CLOSED SYSTEMS
全封闭系统中硅表面与无氧水/无水氧反应控制的研究
  • 批准号:
    10555009
  • 财政年份:
    1998
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
A STUDY ON SOI QUANTUM DEVICES WITH VARIABLE FUNCTION BY RESONANT/NON-RESONANT CONTROL IN VERTICAL RESONANT TUNNELING STRUCTURES
垂直谐振隧道结构中谐振/非谐振控制的可变功能SOI量子器件研究
  • 批准号:
    10450123
  • 财政年份:
    1998
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
A STUDY OF ANALYSIS AND CONTROL OF SEMICONDUCTOR SURFACE REACTION BY SURFACE CARRIER CONDUCTION MODULATION
表面载流子传导调制半导体表面反应分析与控制研究
  • 批准号:
    04452166
  • 财政年份:
    1992
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
A Development of Low-Temperature Silicon Oxidation Enhanced by Fluorine Catalysis
氟催化低温氧化硅的研究进展
  • 批准号:
    60850061
  • 财政年份:
    1985
  • 资助金额:
    $ 11.81万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

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