A STUDY ON REACTION CONTROL BETWEEN SILICON SURFACES AND OXYGEN-FREE WATER/WATER-FREE OXYGEN IN COMPLETELY CLOSED SYSTEMS

全封闭系统中硅表面与无氧水/无水氧反应控制的研究

基本信息

批准号：
10555009
负责人：
MORITA Mizuho
金额：
$ 8.19万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10555009/
关键词：
SEMICONDUCTOR SURFACE SEMICONDUCTOR PROCESS SILICON SURFACE REACTION

项目摘要

A combination method of heating-up process with cooling-down in thermal desorption spectroscopy has been proposed in order to reveal the chemical reaction of hydrogen-terminated Si surfaces with water at elevated temperatures. It has been found for the first time that an HF-cleaned Si (100) surface reacts with water at approximate 400℃ or higher. HF-cleaned Si (100) surfaces have been analyzed with a thermal desorption spectroscopy system under introducing oxygen gas into the analytical chamber so as to characterize chemical reactions of Si surfaces with oxygen. It has been demonstrated that the HF-cleaned Si (100) surface reacts with oxygen or water after the hydrogen desorption at approximate 510℃ under introducing oxygen gas. The thermal oxidation of HF-cleaned Si (100) surfaces in the heating-up has been characterized with an oxidation system. It has been demonstrated that the oxide film thickness grown during the heating-up in oxygen gas at an atmospheric pressure to 900℃ begins to increase beyond approximate 550℃. Metal-oxide-semiconductor (MOS) diode characteristics have shown that leak current densities through silicon dioxide films with thinner preoxide grown during the heating-up to thermal oxidation at 900℃ are lower than that with thicker preoxide for the film with the total thickness of approximate 3 nm. The preoxide with the thickness of 0.3-0.4 nm, which corresponds to one molecular layer of oxide, has been grown during the heating-up to 900℃ at the rate of 50 deg/sec in 0.3% oxygen gas diluted with nitrogen. It has been demonstrated for the first time that the electrical insulating performance and reliability of ultrathin silicon dioxide films depends on the ultrapure water cleaning time of silicon wafers before MOS diode fabrication because of atomic structure change of silicon surface by ultrapure water cleaning.

已经提出了一种与热降低光谱中冷却过程的加热方法的组合方法，以在较高的温度下用水在氢端的Si表面上为氢（100）表面（100）表面（100）表面在分析室中引入氧气下的Scopy System蜂蜜，以表征具有氧气的Si表面化学作用。氧气的氧气氧化在加热中的HF清洁Si（100）表面已通过氧化系统表征了。 C开始增加超过约550°C。金属氧化物 - 轴导剂（MOS（MOS））二极管特性通过在900°C下使用较薄的L氧化的硅化膜泄漏电流密度较低，而较厚的前氧化物总计较厚的总总氧化厚度为3 nm的总厚度。时间隔热和轻度性烯丙基硅化硅膜取决于超纯水在MOS二极管制造前清除我的硅晶片，因为通过超纯水清洗了硅表面的原子结构变化。