A STUDY ON REACTION CONTROL BETWEEN SILICON SURFACES AND OXYGEN-FREE WATER/WATER-FREE OXYGEN IN COMPLETELY CLOSED SYSTEMS

全封闭系统中硅表面与无氧水/无水氧反应控制的研究

基本信息

批准号：
10555009
负责人：
MORITA Mizuho
金额：
$ 8.19万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10555009/
关键词：
SEMICONDUCTOR SURFACE SEMICONDUCTOR PROCESS SILICON SURFACE REACTION

项目摘要

A combination method of heating-up process with cooling-down in thermal desorption spectroscopy has been proposed in order to reveal the chemical reaction of hydrogen-terminated Si surfaces with water at elevated temperatures. It has been found for the first time that an HF-cleaned Si (100) surface reacts with water at approximate 400℃ or higher. HF-cleaned Si (100) surfaces have been analyzed with a thermal desorption spectroscopy system under introducing oxygen gas into the analytical chamber so as to characterize chemical reactions of Si surfaces with oxygen. It has been demonstrated that the HF-cleaned Si (100) surface reacts with oxygen or water after the hydrogen desorption at approximate 510℃ under introducing oxygen gas. The thermal oxidation of HF-cleaned Si (100) surfaces in the heating-up has been characterized with an oxidation system. It has been demonstrated that the oxide film thickness grown during the heating-up in oxygen gas at an atmospheric pressure to 900℃ begins to increase beyond approximate 550℃. Metal-oxide-semiconductor (MOS) diode characteristics have shown that leak current densities through silicon dioxide films with thinner preoxide grown during the heating-up to thermal oxidation at 900℃ are lower than that with thicker preoxide for the film with the total thickness of approximate 3 nm. The preoxide with the thickness of 0.3-0.4 nm, which corresponds to one molecular layer of oxide, has been grown during the heating-up to 900℃ at the rate of 50 deg/sec in 0.3% oxygen gas diluted with nitrogen. It has been demonstrated for the first time that the electrical insulating performance and reliability of ultrathin silicon dioxide films depends on the ultrapure water cleaning time of silicon wafers before MOS diode fabrication because of atomic structure change of silicon surface by ultrapure water cleaning.

为了揭示氢终止的Si表面与水在升高温度下的水的化学反应，已经提出了一种在热解诉光谱中冷却的加热过程的组合方法。首次发现HF清洁的Si（100）表面与水大约400℃或更高时反应。在将氧气引入分析室中，已经用热解镜系统分析了HF清洁的Si（100）表面，以表征Si表面与氧的化学反应。已经证明，在引入氧气的氧气下，HF清洁的Si（100）表面在氢解吸后与氧气或水反应。加热中HF清洗的Si（100）表面的热氧化物已通过氧化系统表征。已经证明，在大气压力至900℃的氧气中生长的氧化物膜厚度开始增长超过550℃。金属 - 氧化物 - 二极管特征表明，在900层的热氧化加热至900时，通过二氧化硅的泄漏电流密度较薄，其较厚的前氧化物比较厚的前氧化物较厚，总厚度为3 nm。氧化厚度为0.3-0.4 nm，对应于一个分子氧化物，在加热期间已在900°℃中生长，在0.3％的氧气中用氮气稀释的0.3％氧气中的速率为900℃。首次证明，超薄二氧化硅膜的电绝缘性能和可靠性取决于MOS二极管制造前硅水的超纯水清洁时间，这是由于超纯净水的原子结构变化而导致的。