A Development of Low-Temperature Silicon Oxidation Enhanced by Fluorine Catalysis

氟催化低温氧化硅的研究进展

基本信息

批准号：
60850061
负责人：
MORITA Mizuho
金额：
$ 6.08万
依托单位：
TOHOKU UNIVERSITY (1986)Hiroshima University (1985)
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1986
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60850061/
关键词：
Low Temperature Oxidation Silicon Oxidation 弗素触媒光酸化

项目摘要

Low-temperature oxidation of silicon by using fluorine-enhanced oxidation is developed. The knowledge and results obtained through this research project are as follow: 1. A 50 A thick oxide layer is grown even at 400゜C for 30 min by fluorine-enhanced thermal oxidation using an <O_2> + <NF_3> gas mixture, when the <NF_3> concentration is about 10%.2. The enhancement of the oxidation rate originates in the catalytic effect of the fluorine radicals which enhance the oxidation reactions in the <SiO_2> -Si interface.3. An oxide layer of more than 60 A can be grown even at 400゜C for 20 min at <NF_3> concentration less than 0.5% under ArF excimer laser irradiation. Further lowering of the oxidation temperature to 300゜C would be possible in higher <NF_3> concentration range.4. Fluorine atoms incorporated in the oxide layer grown by the fluorine-enhanced oxidation are substituted by oxygen atoms through post-annealing in pure oxygen gas at the same temperature as oxidation, and can be effectively removed in wet oxygen.5. Annealing of the oxide in pure ammonia gas at the same temperature as oxidation results in the formation of nitrided oxide as a consequence that fluorine atoms incorporated in as-grown oxide are substituted by nitrogen atoms.6. The interface trap densities and the dielectric breakdown strength of the MOS structures are remarkably improved by the post-annealing in pure oxygen, wet oxygen, and pure ammonia gas.7. Thin gate oxide films with high-qualities can be formed by using an ultra clean oxidation technology. The interface trap densities of <SiO_2> -Si interface near midgap are of the order of <10^9> <cm^(-2)> <eV^(-1)> , and the dielectric breakdown strength of <SiO_2> is above 10 MV/cm.

通过使用氟增强的氧化对硅的低温氧化。通过该研究项目获得的知识和结果如下：1。当<NF_3>浓度为<NF_3>浓度时，使用<o_2> + <nf_3>气体混合物在400°C下厚氧化物也会在400°C下生长30分钟。氧化速率的增强起源于氟自由基的催化作用，从而增强了<sio_2> -SI接口中的氧化反应。3。在ARF准分子激光照射下，即使在400°C下的氧化层也可以在400°C下生长20分钟。在较高的<nf_3>浓度范围内将可能进一步降低氧化温度至300°C。4。通过氧化物在与氧化物相同的温度下在纯氧气中在纯氧气中在纯氧气中融合的氧化氧化氧化氧化物中掺入的氟原子被氧原子取代，并且可以在湿氧中有效去除。5。纯氨气中氧化物在与氧化物相同温度下的氧化物退火导致氧化氧化物的形成，因此，掺入氧化物中生长的氧化物中的氟原子被氮原子代替。6。通过纯氧气，湿氧和纯氨气中的禁令，界面陷阱密度和MOS结构的顽固分解强度显着改善。7。可以使用超干净的氧化技术形成具有高质量的薄门氧化物膜。 MIDGAP附近的<sio_2> -SI接口的界面陷阱密度为<10^9> <cm^（ - 2）> <ev^（ - 1）>，<sio_2>的饮食分解强度高于10 mV/cm。