A STUDY ON REACTION MECHANISM CONTROL UNDER LIGHT IRRADIATION IN ULTRACLEAN CLEANING OR HEATING PROCESSES OF SILICON SURFACES

硅表面超净清洗或加热过程中光照射反应机理控制研究

基本信息

批准号：
13555007
负责人：
MORITA Mizuho
金额：
$ 8.51万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2004
项目状态：
已结题

项目摘要

Ultrathin silicon dioxide films have been formed on silicon wafers in ultrapure oxygen gas by the heating with infrared light irradiation, and tunneling current through the ultrathin silicon dioxide films or the dielectric breakdown voltage has been demonstrated to depend on the silicon wafer rinsing time with ultrapure water under megasonic irradiation before thermal oxidation. Ultrapure water rinsing with megasonic irradiation for 10 min is optimal to form ultrathin silicon dioxide films with high dielectric performances. The dielectric characteristics of ultrathin silicon dioxide films are sensitive to the microroughness of the silicon wafer surface determined by the rising process. The silicon wafer on which the ultrathin silicon dioxide film is formed by thermal oxidation has been exposed to air, and organic species adsorbed on the silicon dioxide surface have been identified. The organic species removed by ozonized ultrapure water rinsing of the silicon wafer or the organic species which are not efficiently removed have been determined. It has been found that the etching rate becomes low and the etched surface becomes flat by the irradiation of the ultraviolet light including the light with the energy higher than that of the silicon bandgap on a silicon wafer during wet etching. A silicon dioxide film has been found to be formed by the irradiation of the semiconductor laser light with the energy higher than that of the silicon bandgap on a hydrogen-terminated silicon wafer dipped in ultrapure water. This suggests that the silicon surface can be patterned by etching the silicon dioxide film.

通过红外光照射加热，在超纯氧气中在硅片上形成了超薄二氧化硅薄膜，并且通过超薄二氧化硅薄膜的隧道电流或介电击穿电压已被证明取决于用超纯水冲洗硅片的时间热氧化前在兆频超声波照射下。兆频超声波照射超纯水冲洗 10 分钟是形成具有高介电性能的超薄二氧化硅薄膜的最佳选择。超薄二氧化硅薄膜的介电特性对由上升过程决定的硅片表面的微观粗糙度很敏感。将通过热氧化在其上形成超薄二氧化硅膜的硅晶片暴露于空气中，并且已鉴定出吸附在二氧化硅表面上的有机物质。已经确定了通过臭氧化超纯水漂洗硅片去除的有机物或未有效去除的有机物。已经发现，在湿法蚀刻期间，通过照射包括能量高于硅晶片上的硅带隙的光的紫外光，蚀刻速率变低并且蚀刻表面变得平坦。已经发现，通过用高于硅带隙能量的半导体激光照射浸入超纯水中的氢封端硅晶片，可以形成二氧化硅膜。这表明可以通过蚀刻二氧化硅膜来对硅表面进行图案化。

项目成果

期刊论文数量（54）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Yasushi AZUMA, Isao KOJIMA: "The Influence of Organic Contamination on Ultrathin Silicon Dioxide Film Thickness Measured by Ellipsometry"Extended Abstracts of the 8th Workshop on FORMATION, CHARACTERIZATION A

Akihito SHINOZAKI、Kenta ARIMA、Mizuho MORITA、Yasushi AZUMA、Isao KOJIMA：“有机污染对椭圆光法测量的超薄二氧化硅薄膜厚度的影响”第八届形成、表征 A 研讨会的扩展摘要

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Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Isao KOJIMA, Yasushi AZUMA: "FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO2 Surfaces"ANALYTICAL SCIENCES. 19. 1557-1559 (2003)

Akihito SHINOZAKI、Kenta ARIMA、Mizuho MORITA、Isao KOJIMA、Yasushi AZUMA：“SiO2 表面有机污染物清洁方法的 FTIR-ATR 评估”分析科学。

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Atsushi OKUYAMA, Kazuo NISHIMURA, Satoru MORITA, Kenta ARIMA, Mizuho MORITA: "Effects of Wafer Cleaning with Ultrapure Water on Tunneling Current through Ultra-Thin Silicon Dioxide Films"Extended Abstracts of the 7th Workshop on FORMATION, CHARACTERIZATIO

Atsushi OKUYAMA、Kazuo NISHIMURA、Satoru MORITA、Kenta ARIMA、Mizuho MORITA：“Effects of Wafer Cleaning with Ultrapure Water on Tunneling Current through Ultra-Thin Silica Diodes Film”第七届 FORMATION、CHARACTERIZATIO 研讨会的扩展摘要