A STUDY OF ANALYSIS AND CONTROL OF SEMICONDUCTOR SURFACE REACTION BY SURFACE CARRIER CONDUCTION MODULATION

表面载流子传导调制半导体表面反应分析与控制研究

• 批准号: 04452166
• 负责人: MORITA Mizuho
• 金额: $ 4.29万
• 依托单位: TOHOKU UNIVERITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452166/
• 关键词: Semiconductor Surface; Oxidation; Thin Film Growth; 半導体薄膜成長

Metal-gap-semiconductor diode structures have been fabricated to demonstrate that the termination of dangling bonds at semiconductor surfaces can be analyzed by observing capture and emission of carriers by surface states. It has been demonstrated that the termination level of dangling bonds at semiconductor surfaces can be evaluated by measuring high-frequency capacitance-voltage characteristics of the diode structure. The high-frequency capacitance-voltage measurements of metal-gap-semiconductor diode structures with hydrogen-terminated and oxygen-terminated silicon surfaces indicate that the surface state density reflects process conditions of silicon surfaces. Furthermore, process determining MOS device performances have been ascertained. The reliability of MOSFET devices depends on the quality of the preoxide which is grown on the silicon surface during the temperature ramp-up in the gate oxide formation process. High reliable MOSFET devices can be fabricated by thinning the preoxide. The contac resistance of metal(tungsten)-semiconductor(silicon) contacts depends on the amount of native oxide grown on the silicon surface during from cleaning the silicon surface to the metal film deposition. The low resistance contacts can be formed by suppressing the native oxide growth.

金属带隙半导体二极管结构的制造表明，可以通过观察表面态载流子的捕获和发射来分析半导体表面悬空键的终止。已经证明，可以通过测量二极管结构的高频电容电压特性来评估半导体表面悬空键的终止水平。具有氢端接和氧端接硅表面的金属间隙半导体二极管结构的高频电容电压测量表明，表面态密度反映了硅表面的工艺条件。此外，决定 MOS 器件性能的工艺也已确定。 MOSFET 器件的可靠性取决于栅极氧化物形成过程中温度升高期间在硅表面生长的预氧化物的质量。通过减薄预氧化物可以制造高可靠性 MOSFET 器件。金属（钨）-半导体（硅）接触的接触电阻取决于从清洁硅表面到金属膜沉积期间硅表面上生长的自然氧化物的量。低电阻接触可以通过抑制自然氧化物生长来形成。

项目成果

K.Makihara,A.Teramoto,K.Nakamura,M.Y.Kwon,M.Morita and T.Ohmi: "Preoxide-Controlled Oxidation for Very Thin Oxide Films" Japanese Journal of Applied Physics. 32. 294-297 (1993)

K.Makihara、A.Teramoto、K.Nakamura、M.Y.Kwon、M.Morita 和 T.Ohmi：“极薄氧化膜的预氧化物控制氧化”日本应用物理学杂志。

K.Yamadam, M.Morita, C.M.Soh, H.Suzuki, and T.Ohmi: "Low-Temperature Silicon Epitaxy Using Gas Molecular-Flow Preshowering" Journal of Electrochemical Society. 140. 371-377 (1993)

K.Yamadam、M.Morita、C.M.Soh、H.Suzuki 和 T.Ohmi：“使用气体分子流预喷的低温硅外延”电化学学会杂志。

K.Makihara, A.Teramoto, K.Nakamura, M.Y.Kwon, M.Morita and T.Ohmi: "Preoxide-Controlled Oxidation for Very Thin Oxide Films" Japanese Journal of Applied Physics. 32. 294-297 (1993)

K.Makihara、A.Teramoto、K.Nakamura、M.Y.Kwon、M.Morita 和 T.Ohmi：“极薄氧化膜的预氧化物控制氧化”日本应用物理学杂志。

Y.Maeda,H.Suzuki,T.Sakoh,K.Morita,M.Morita,and T.Ohmi: "High-Selectivity and High Deposition Rate Tungsten CVD Freed from Chamber Cleaning" Journal of Electrochemical Society. 141. 566-571 (1994)

Y.Maeda、H.Suzuki、T.Sakoh、K.Morita、M.Morita 和 T.Ohmi：“高选择性和高沉积速率钨 CVD 无需清洁室”电化学学会杂志。

H.Suzuki, Y.Maeda, K.Morita, M.Morita, and T.Ohmi: "Selective Tungsten Chemical Vaper Deposition with High Deposition Rate for ULSI Application" Japanese Journal of Applied Physics. 33. 451-454 (1994)

H.Suzuki、Y.Maeda、K.Morita、M.Morita 和 T.Ohmi：“用于 ULSI 应用的高沉积速率的选择性钨化学气相沉积”日本应用物理学杂志。