A STUDY ON ENERGY LEVEL CHARACTERIZATION DEVICES FOR BIOLOGICAL MATERIALS BY ELECTRON RESPONSE OF METAL/MICRO-GAP/SEMICONDUCTOR STRUCTURES

金属/微间隙/半导体结构电子响应生物材料能级表征装置的研究

基本信息

  • 批准号:
    18360148
  • 负责人:
  • 金额:
    $ 11.2万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2006
  • 资助国家:
    日本
  • 起止时间:
    2006 至 2009
  • 项目状态:
    已结题

项目摘要

The sensing of deoxyribonucleic acid solutions by capacitance-voltage measurements of a metal/micro-gap/semiconductor structure device has been demonstrated. The different concentrations of deoxyribonucleic acid solutions have been characterized from the change of the capacitance-voltage curve for the sensing device. A metal/insulator/gap/insulator/semiconductor structure device was sensitive to the ion concentration of the solution and had high sensitivity. It has been suggested that the change of capacitance-voltage characteristics reflects the change of the charge on the sensing silicon dioxide surface.
已经证明了通过金属/微间隙/半导体结构装置的电容 - 电压测量测量来传感脱氧核糖核酸溶液。从传感设备的电容 - 电压曲线的变化中,已经表征了不同浓度的脱氧核糖核酸溶液。金属/绝缘子/间隙/绝缘子/半导体结构设备对溶液的离子浓度敏感,并且具有高灵敏度。已经提出,电容 - 电压特性的变化反映了传感二氧化硅表面电荷的变化。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Sensing of DNA solution with Metal-Gap-Insulator-Semiconductor Device
使用金属间隙绝缘体半导体器件感测 DNA 溶液
  • DOI:
  • 发表时间:
    2009
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Takaaki Hirokane;Daisuke Kanzaki;Hideaki Hashimoto;Shinichi Urabe Kenta Arima;Junichi Uchikoshi;Mizuho Morita
  • 通讯作者:
    Mizuho Morita
Metal-Gap-Semiconductor Sensing Devices for DNA Solutions
用于 DNA 解决方案的金属间隙半导体传感器件
Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method
不同金属栅极法表征穿过超薄二氧化硅薄膜的隧道电流
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Takaaki HIROKANE;Naoto YOSHII;Tatsuya OKAZAKI;Shinichi URABE;Kazuo NISHIMURA;Satoru MORITA;Kenta ARIMA;Junichi UCHIKOSHI;Mizuho MORITA
  • 通讯作者:
    Mizuho MORITA
Current-Voltage Characteristics of Gap Electrodes with ExtendedλDNA Molecules
具有扩展λDNA分子的间隙电极的电流-电压特性
  • DOI:
  • 发表时间:
    2006
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Katsuhiro Hashimoto;Takamichi Hanada;Yasuhumi Ochi;Takaaki Hirokane;Shigeki Kawakami;Susumu Uchiyama;Kiichi Fukui;Kenta Arima;Junichi Uchikoshi;Mizuho Morita
  • 通讯作者:
    Mizuho Morita
Sensing ofλDNA solutions by metal-gap-semiconductor devices
通过金属间隙半导体器件感测λDNA溶液
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Takaaki Hirokane;Daisuke Kanzaki;Hideaki Hashimoto;Shinichi Urabe;Kenta Arima;Junichi Uchikoshi;Mizuho Morita
  • 通讯作者:
    Mizuho Morita
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MORITA Mizuho其他文献

MORITA Mizuho的其他文献

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{{ truncateString('MORITA Mizuho', 18)}}的其他基金

A STUDY OF TUNNEL ELECTRON INJECTION LIGHT-EMITTING DEVICES WITH A TWO-DIMENSIONAL QUANTUM STRUCTURE OF ULTRATHIN SILICON/SILICON DIOXIDE
超薄硅/二氧化硅二维量子结构隧道电子注入发光器件的研究
  • 批准号:
    26630130
  • 财政年份:
    2014
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
FORMATION OF THREE-DIMENSIONAL SHAPES IN SEMICONDUCTOR SURFACES FOR FUNCTIONAL DEVICES THROUGH PHOTOCHEMICAL REACTION WITH ELECTROPHILIC FLUORINATION AGENTS
通过与亲电氟化剂的光化学反应在功能器件的半导体表面形成三维形状
  • 批准号:
    26289017
  • 财政年份:
    2014
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY OF LIGHT-EMITTING DEVICES WITH AN ULTRATHIN SILICON/SILICON DIOXIDE TWO-DIMENSIONAL QUANTUM STRUCTURE
超薄硅/二氧化硅二维量子结构发光器件的研究
  • 批准号:
    23656217
  • 财政年份:
    2011
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
A STUDY ON ELECTRIC CHARGE/LEVEL CHARACTERIZATION DEVICES FOR BIOLOGICAL MATERIALS WITH METAL/MICRO-GAP/SEMICONDUCTOR ARRAYS
金属/微间隙/半导体阵列生物材料电荷/液位表征装置的研究
  • 批准号:
    22360125
  • 财政年份:
    2010
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON TUNNELING-SPECTROSCOPIC DEVICES WITH NANO-GAP STRUCTURE USING ULTRATHIN SILICON DIOXIDE FILM AS A SPACER
超薄二氧化硅薄膜作为间隔物的纳米间隙结构隧道分光器件的研究
  • 批准号:
    14350166
  • 财政年份:
    2002
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON REACTION MECHANISM CONTROL UNDER LIGHT IRRADIATION IN ULTRACLEAN CLEANING OR HEATING PROCESSES OF SILICON SURFACES
硅表面超净清洗或加热过程中光照射反应机理控制研究
  • 批准号:
    13555007
  • 财政年份:
    2001
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON REACTION CONTROL BETWEEN SILICON SURFACES AND OXYGEN-FREE WATER/WATER-FREE OXYGEN IN COMPLETELY CLOSED SYSTEMS
全封闭系统中硅表面与无氧水/无水氧反应控制的研究
  • 批准号:
    10555009
  • 财政年份:
    1998
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
A STUDY ON SOI QUANTUM DEVICES WITH VARIABLE FUNCTION BY RESONANT/NON-RESONANT CONTROL IN VERTICAL RESONANT TUNNELING STRUCTURES
垂直谐振隧道结构中谐振/非谐振控制的可变功能SOI量子器件研究
  • 批准号:
    10450123
  • 财政年份:
    1998
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
A STUDY OF ANALYSIS AND CONTROL OF SEMICONDUCTOR SURFACE REACTION BY SURFACE CARRIER CONDUCTION MODULATION
表面载流子传导调制半导体表面反应分析与控制研究
  • 批准号:
    04452166
  • 财政年份:
    1992
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
A Development of Low-Temperature Silicon Oxidation Enhanced by Fluorine Catalysis
氟催化低温氧化硅的研究进展
  • 批准号:
    60850061
  • 财政年份:
    1985
  • 资助金额:
    $ 11.2万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

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