Generation methods for high pressure plasmas to be operated in wide parameter ranges and their applications.

在宽参数范围内运行的高压等离子体的产生方法及其应用。

• 批准号: 15340198
• 负责人: TACHIBANA Kunihide
• 金额: $ 10.62万
• 依托单位: Graduate School of Engineering, Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15340198/
• 关键词: Plasma surface treatment; Atmospheric pressure plasma; Microplasma integrated type; Dielectric barrier discharge; Plasma CVD; SiO_2 film; 誘電体バリア放電

Plasma sources which can be operated at atmospheric pressure range are of much interest for applications to various surface treatment technologies. Therefore, the methods for realizing stable glow discharges over larger areas or volumes have been investigated enthusiastically. The aim of our research is to develop a new plasma source which can be operated stably in a wide pressure range including the atmospheric pressure with higher plasma density.In the first step, we have designed a new type of plasma source with an integrated structure of microplasmas arranged in a plane, which is categorized as a dielectric barrier discharge (DBD) scheme. Then, its characteristics have been investigated in a comparison with a conventional parallel-plate system. On the way, we developed a method for the quantitative measurement of metastable He^*(2^3S_1) atoms by using a laser absorption technique at the wavelength of 1.08 μm. We developed also a unique method for the measurement of plasma density with the transmittance characteristics of microwaves of mm-range, by which the electron densities were measured not only in He plasmas but also in N_2 and air plasmas. As the results of those diagnostics, it has been clarified that the plasma density obtained in our new plasma source is higher than that in a conventional source by about an order of magnitude even though the operating voltage is much smaller and also the stability range is wider.In the second step, the source has been applied to the chemical vapor deposition of SiO_2 films by using TEOS as the source material. It turned out that the flows of the diluent and source gases strongly influence the deposition rate and the uniformity under the atmospheric condition. We are trying to optimize the deposition condition by using a simulation tool for the gas flow to realize better results.

可以操作大气压力范围的血浆来源对于各种表面处理技术的应用引起了很多关注。因此，热情地研究了在较大区域或批量上实现稳定发光的方法。我们研究的目的是开发一种新的等离子体源，该源可以在宽的压力范围内进行操作，包括具有较高等离子体密度的大气压。在第一步中，我们设计了一种新型的等离子源，该等离子源具有排列在平面中的微质体结构，该结构被排列在平面中，该结构被分类为顽固的屏障排放（DBD）。然后，在与常规平行板系统的比较中研究了其特征。在途中，我们开发了一种通过在1.08μm的波长下使用激光抽象技术来定量测量亚稳态^*（2^3S_1）原子的方法。我们还开发了一种独特的方法来测量血浆密度，并具有MM范围的微波的传输特性，该方法不仅在HE等离子体中，而且在N_2和空气等离子体中测量了电子密度。作为这些诊断的结果，已经澄清的是，即使操作电压要小得多，并且稳定性范围也很宽，但在第二步中，该源已应用于SIO_2膜的化学蒸气膜，即使使用TEOS将teos应用于teos，即使操作电压较小，而且稳定性范围也很广。事实证明，在大气条件下，稀释剂和源气体的流量强烈影响沉积速率和均匀性。我们正在尝试通过使用模拟工具来实现更好的结果来优化沉积条件。

项目成果

Integrated coaxial-hollow micro dielectric-barrier-discharges for a large-area plasma source operating at around atmospheric pressure

• DOI: 10.1088/0022-3727/38/3/012
• 发表时间: 2005-02
• 期刊: Journal of Physics D: Applied Physics
• 作者: O. Sakai;Y. Kishimoto;K. Tachibana

K.Tachibana: "Spatiotemporal Diagnostics of Excited and Reactive Species in High Pressure Discharges"Bulletin of the American Physical Society. 48(6). 75-76 (2003)

K.Tachibana：“高压放电中激发和反应物质的时空诊断”美国物理学会公报。

プラズマ処理方法およびプラズマ処理技術

等离子体处理方法及等离子体处理技术

• 发表时间: 2003

Diagnostics of microdischarge-integrated plasma sources for display and materials processing

• DOI: 10.1088/0741-3335/47/5a/012
• 发表时间: 2005-05
• 期刊: Plasma Physics and Controlled Fusion
• 影响因子: 2.2
• 作者: K. Tachibana;Y. Kishimoto;S. Kawai;T. Sakaguchi;O. Sakai

Measurement of metastable He^*(2^3S_1) density in dielectric barrier discharges with two different configurations operating at around atmospheric pressure

在大气压附近使用两种不同配置测量介质阻挡放电中的亚稳态 He^*(2^3S_1) 密度

• 发表时间: 2005
• 期刊: Journal of Applied Physics 97(to be published)
• 作者: M.Annaka;C.Tanaka;T.Nakahira;M.Sugiyama;T.Aoyagi;T.Okano;Takaya Nagai;K.Tachibana
• 通讯作者: K.Tachibana