INTERACTION OF FREE-RADICALS WITH SOLID SURFACES AS STUDIED BY FLUORESCENCE-IMAGING METHOD WITH CROSSED BEAMS

交叉光束荧光成像法研究自由基与固体表面的相互作用

• 批准号: 03452079
• 负责人: TACHIBANA Kunihide
• 金额: $ 3.9万
• 依托单位: KYOTO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452079/
• 关键词: Surface Reaction; Radical Beam; Laser Induced Fluorescence Spectroscopy; Si-Containing Radicals; Atomic Radicals; Hydrogenated Amorphous Silicon; Oxidation Reaction of Silicon; 電子ビーム励起蛍光法; ラジカルビ-ム; 電子ビ-ム; 蛍光励起分光法; 水素原子; メタン系ラジカル; 表面反応; 付着係数

In order to understand the kinetics of neutral radical reactions in plasma-and photo-excited material processing, we performed in-situ diagnostics of their reactions on the solid surfaces. As the first step, we built suitable radical sources driven by RF- and MW-discharges. We established also highly-sensitive methods to measure the densities and fluxes of effused radicals from these sources by using laser induced fluorescence spectroscopy (LIF), intra-cavity laser absorption spectroscopy (ICLAS) and so on. Among the successfully detected radicals are Si-containing radicals such as Si, SiH and SiH_2 and atomic radicals such as H, O and N.Firstly, the reactions of SiH_n(n=0-2) have been studied in the deposition of hydrogenated amorphous silicon (a-Si:H). From a comparison of characterized incident flux of these radicals and the measured optical and electrical proper-ties of the deposited films the reaction mechanisms involved in the deposition have been discussed. The obtained result is also consistent with a computer simulation of our proposed surface reaction model. Secondly, the mechanism of low temperature oxidation of silicon wafer surface has been studied using an oxygen radical source, in which the enhancement of oxidation has been correlated with the flux of oxygen atoms and electronically excited oxygen molecules.

为了了解等离子体和光激发材料加工中中性自由基反应的动力学，我们对其在固体表面上的反应进行了原位诊断。第一步，我们构建了由射频和微波放电驱动的合适的自由基源。我们还利用激光诱导荧光光谱（LIF）、腔内激光吸收光谱（ICLAS）等建立了高灵敏度的方法来测量这些来源流出自由基的密度和通量。成功检测到的自由基包括Si、SiH、SiH_2等含硅自由基和H、O、N等原子自由基。首先研究了SiH_n(n=0-2)在氢化非晶沉积中的反应。硅（a-Si:H）。通过比较这些自由基的特征入射通量和测量的沉积薄膜的光学和电学特性，讨论了沉积中涉及的反应机制。获得的结果也与我们提出的表面反应模型的计算机模拟一致。其次，利用氧自由基源研究了硅片表面低温氧化的机理，其中氧化的增强与氧原子和电子激发氧分子的通量相关。

项目成果

W. Chen: "Surface Reaction Modeling in an RF Plasma CVD of a-Si:H" Proc. 10th Symposium on Plasma Processing. 215-218 (1993)

W. Chen：“a-Si:H 的射频等离子体 CVD 中的表面反应建模”Proc。

K.Tachibana: "Detection of H Atoms in RF-Discharge CH_4,SiH_4 and H_2 Plasmas by Two-Photon Absorption Laser Induced Fluorescence(TALIF)Spectroscopy" Proceedings of the 10th Symposium on Plasma Processing(応用物理学会プラズマエレクトロニクス分科室). 48-52 (1993)

K. Tachibana：“通过双光子吸收激光诱导荧光(TALIF)光谱检测RF放电CH_4、SiH_4和H_2等离子体中的H原子”第10届等离子体加工研讨会论文集（日本应用物理学会等离子体电子分会） ）48-52（1993）。

橘 邦英: "中性原子ラジカル源とレーザー誘起蛍光法による評価" 第3回粒子線の先端的応用技術に関するシンポジウムプロシーディングス(粒子線技術懇談会). 151-158 (1992)

Kunihide Tachibana：“中性原子自由基源和激光诱导荧光的评估”第三届粒子束先进应用技术研讨会论文集（粒子束技术会议）151-158（1992）。

K. Tachibana: "Detection of H Atoms in RF-Discharge CH_4, SiH_4, and H_2 Plasmas by Two-Photon Absorption Laser-Induced Fluorescence (TALIF) Spectroscopy" Proc. 10th Symposium on Plasma Processing. 49-52 (1993)

K. Tachibana：“通过双光子吸收激光诱导荧光 (TALIF) 光谱检测 RF 放电 CH_4、SiH_4 和 H_2 等离子体中的 H 原子”Proc。

Kunihide Tachibana: "In Situ Investigations of Radical Kinetics in the Deposition of Amorphous Silicon Films" Proceedings of Europian Material Research Society 1922 Spring Meeting. (1992)

Kunihide Tachibana：“非晶硅薄膜沉积中自由基动力学的原位研究”欧洲材料研究学会 1922 年春季会议论文集。