Analysis of Interfacial Phenomena between Plasmas and Solid Surfaces with Microstructure

等离子体与固体表面界面现象的微观结构分析

基本信息

批准号：
06452422
负责人：
TACHIBANA Kunihide
金额：
$ 4.35万
依托单位：
KYOTO UNIVERSITY (1995)Kyoto Institute of Technology (1994)
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

Firstly, fluxes of radicals transported from plasmas to substrates were measured as the boundary condition for surface reactions. The radicals measured are including atomic species such as H,O and N,and molecular species such as SiH_2 and CF_2. Secondly, a new method named FT-IR phase modulated spectroscopic ellipsometry (PMSE) has been developed for in-situ surface diagnostics By this method chemical bonding states on the surface are detected with a high sensitivity.By using these method, surface reactions in the etching of Si wafer was investigated as the first example. A thin fluorinated overlayr was detected on a substrate placed on the self-biased RF electrode, which was irradiated by ions bombarding with appreciable energy in addition to neutral radicals. On the other hand, polymer formation was observed on a substrate placed on the grounded electrode with less ion bombardment. These phenomena are suggested to occur at the bottom and the side wall, respectively, of a micro-trench on a patterned substrate. The effect of ion bombardment are going to be investigated in detail by using a mass spectrometer placed at the bottom of a substrate with micro channels of high aspect ratios.In the other example, roles of SiH_2 and H radicals were studied in the deposition of amorphous and polycrystalline Si films. The characteristics of deposited films were analyzed by in-situ spectroscopic ellipsometry. As an important conclusion, it has been recognized that hydrogen atoms work both in the etching of amorphous tissue and in the chemical annealing of stressed structures for enhancing the crystal growth.Through these studies some methods have been considered for increasing the spatial resolution in the gas-phase and surface diagnostics. With the improved resolution this project has been continued for better understandings of the interaction of plasmas with micro-structured substrates.

首先，将从等离子体传输到底物的自由基的通量测量为表面反应的边界条件。所测量的自由基包括原子种类，例如H，O和N，以及SIH_2和CF_2等分子物种。其次，一种称为FT-IR期调制的新方法通过这种方法检测到表面上的化学键合态，以高灵敏度检测到现场表面诊断。研究了Si晶片的蚀刻作为第一个例子。在放置在自偏的RF电极上的底物上检测到氟化的覆盖物，除了中性自由基外，还通过离子轰击的离子轰炸，该副电极被辐照。另一方面，在放置在接地电极上的基板上观察到聚合物形成，离子轰击较少。这些现象被认为分别发生在图案化底物上的微型沟槽的底部和侧壁。通过使用放置在基板底部的质谱仪，具有高纵横比的微通道，将对离子轰击的效果进行详细研究。在另一个例子中，SIH_2和H自由基的作用在无定形的沉积中进行了研究。和polycrystalline si膜。通过原位光谱椭圆法分析了沉积膜的特征。作为一个重要的结论，人们已经认识到，氢原子在蚀刻无定形组织和应力结构的化学退火方面都起作用，以增强晶体生长。通过这些研究，已经考虑了一些方法来增加气体的空间分辨率 - 相和表面诊断。随着分辨率的改进，该项目已继续进行，以更好地理解等离子体与微结构底物的相互作用。