Process Diagnostics in High-Aspect-Ratio Patterns by Microscopic Interferometry

通过显微干涉测量法对高纵横比图案进行过程诊断

• 批准号: 10555022
• 负责人: TACHIBANA Kunihide
• 金额: $ 6.91万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10555022/
• 关键词: Plasma Processing; Microstructure Etching; Microscopic Interferometry; In-process Monitoring; Two-dimensional Shape Monitoring; Two-dimensional Rate Monitoring

In ULSI (ultra large scale integration) fabrication, an in-situ monitoring tool for high-aspect-ratio pattern processing is required. In this work we have aimed the development and its performance characterization of a new diagnostic method based on an interferometric technique combined with an optical microscope. In the first year, we developed the basic construction of two-dimensional interferometric microscopy by using a monochromatic laser source, a Michelson interferometer and a high sensitive CCD (charge coupled device) camera. In the second year, we put much effort to solve a tough problem due to the disturbance by mechanical vibrations by adopting a mechanically stiff structure and a computational technique for compensating the distortion.In the latter half of this project, we tried to apply this technique to a realistic problem. One of the urgent problem in the currently used plasma etching process of SiO2 is the improvement of etching selectivity to underlying or protecting materials such as Si, SiィイD23ィエD2 NィイD24ィエD2 and photo-resist. We used this method in the precise in-situ measurement of etching rates for these materials under various plasma conditions of fluorocarbon gases. From the results the reactions in the gas phase and on the substrate surface and their controlling methods are argued for realizing better selectivity.

在ULSI（超大规模集成）制造中，需要一种用于高光谱比率处理的原位监视工具。在这项工作中，我们针对的是基于干涉技术与光学显微镜结合的新诊断方法的开发及其性能表征。在第一年，我们通过使用单色激光源，米歇尔森干涉仪和高灵敏的CCD（电荷耦合设备）摄像头开发了二维干涉显微镜的基本结构。在第二年，我们通过采用机械僵硬的结构和一种补偿失真的计算技术来解决由于灾难而解决的艰难问题。在该项目的后半部分，我们试图将此技术应用于现实问题。 SIO2当前使用的等离子蚀刻过程中的紧迫问题之一是提高对基础或保护材料（例如Si，SII D23 E D2 NY E D24 E D2）的选择性的蚀刻性，并提高了抑制作用。我们在各种氟化合物气体的等离子体条件下对这些材料的蚀刻速率进行了准确的原位测量。从结果来看，气相和底物表面及其控制方法的反应是为了实现更好的选择性的主张。

项目成果

Hideki Motomura: "Analysis for Chemical Bonds Formed on SiO_2 and Si_3N_4 Surfaces in C_4F_8 and C_5F_8 Plasmas for Selective Etching Processes"Extended Abstracts of International Workshop on Basic Aspects of Non-equilibrium Plasmas Interacting with Surfa

本村秀树：“Analysis for Chemical Bonds Formed on SiO_2 and Si_3N_4 Surfaces in C_4F_8 and C_5F_8 Plasmas for Selective Etching Processes”非平衡等离子体与表面相互作用基本方面国际研讨会扩展摘要

Kunihide Tachibana, Kazuo Takahashi, Takeshi Kawasaki and Shin-ich Imai: "Reactions of Perfluoro-Compound Alternatives in SiOィイD22ィエD2 Plasma Etching Studied by Laser Spectroscopic and Mass Spectrometric Techniques"Proc. 14ィイD1thィエD1 Int. Symposium on Pla

Kunihide Tachibana、Kazuo Takahashi、Takeshi Kawasaki 和 Shin-ich Imai：“通过激光光谱和质谱技术研究 SiOiD22D2 等离子体蚀刻中全氟化合物替代品的反应”研讨会论文集。

Shin-ichi Imai: "Analysis of Product Species in Capacitively Coupled C_5F_8 Plasma by Electron Attachment Mass Spectroscopy"Jpn. J. Appl. Phys.. 38.8A. L888-L891 (1999)

Shin-ichi Imai：“通过电子附着质谱分析电容耦合 C_5F_8 等离子体中的产物种类”Jpn。

Kunihide Tashibana: "Behavior of F Atoms and CF_2 Radicals in Fluorocarbon Plasmas for SiO_2/Si Etching"Jpn. J. Appl. Phys.. 38.7B. 4367-4372 (1999)

Kunihide Tashibana：“F原子和CF_2自由基在氟碳等离子体中用于SiO_2/Si蚀刻的行为”Jpn。

Kunihide Tachibana: "Reactions of Perfluoro-Compound Alternatives in SiO_2 Plasma Etching Studied by Laser Spectroscopic and Mass Spectrometric Techniques"Proc.14^<th> International Symposium on Plasma Chemistry. Vol.3. 1149-1153 (1999)

Kunihide Tachibana：“通过激光光谱和质谱技术研究SiO_2等离子体蚀刻中全氟化合物替代品的反应”Proc.14^<th>国际等离子体化学研讨会。