A Study of High-Functional Material System for Opto-Electronic Integrated Devices with Metal/Insulator Heterostructure Superlattices

金属/绝缘体异质结构超晶格光电集成器件高性能材料体系研究

基本信息

批准号：
11555084
负责人：
ASADA Masahiro
金额：
$ 8.26万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

项目摘要

This project aimed at constructing high-functional integrated circuits composed of electron devices, optical devices, and opto-electronic devices utilizing metal/insulator/semiconductor superlattices on silicon substrates. In order to realize such integrated circuits, we achieved well controlled epitaxial growth of CaF_2/CdF_2 and Si/CaF_2 superlattices which are suitable for high-functional devices due to their very high band offsets resulting in remarkable quantum effects. We then fabricated resonant tunneling devices with these superlattices, and ultra-short channel Schottky source/drain MOSFETs to be integrated with the resonant tunneling devices.For the epitaxial growth and its application to resonant tunneling devices, we established the growth condition by using ionized beam epitaxial technique, and obtained resonant tunneling diodes with the peak-to-valley ratio of the negative differential resistance as high as 10^5. The crystalline quality of the epitaxial layers were further … More improved by a selective growth into windows with a few hundred nanometer size made on silicon substrate by SiO_2 masks. By this method resonant tunneling diodes with high uniformity, reproducibility, and large peak-to-valley ratio were obtained at room temperature.Ultra-short channel MOSFETs with Schottky sources and drains were fabricated with PtSi for p-type and ErSi_2 for n-type devices. Room-temperature operation of the devices with the channel length as short as 25nm was achieved. On/off ratio was shown to be increased by the use of SOI substrates with the thin silicon layers. As a transistor structure suitable for integration with the resonant tunneling diodes, vertical Schottky source/drain p-MOSFETs were fabricated, and transistor action was achieved at room temperature for the devices with channel width 8nm and channel length 50nm. By these results, we believe that fabrication process and fundamental operation of the basic elements for high-functional quantum-effect devices and their integrated circuits on silicon substrates were established. Less

该项目旨在利用硅衬底上的金属/绝缘体/半导体超晶格构建由电子器件、光学器件和光电器件组成的高功能集成电路。为了实现这种集成电路，我们实现了CaF_2的良好控制外延生长。 /CdF_2 和 Si/CaF_2 超晶格由于其非常高的能带偏移导致显着的量子效应，因此适用于高性能器件。具有这些超晶格的隧道器件，以及与谐振隧道器件集成的超短沟道肖特基源极/漏极MOSFET。对于外延生长及其在谐振隧道器件中的应用，我们利用离子束外延技术建立了生长条件，并获得了负微分电阻峰谷比高达10^5的谐振隧道二极管，外延层的结晶质量进一步提高。通过SiO_2掩模在硅衬底上选择性生长数百纳米尺寸的窗口，在室温下获得了具有高均匀性、重复性和大峰谷比的谐振隧道二极管。具有肖特基源极和漏极的沟道 MOSFET 采用 PtSi（用于 p 型）和 ErSi_2（用于 n 型器件）制造，器件的沟道长度短至室温。通过使用具有薄硅层的 SOI 衬底，可以实现 25nm 的开/关比，作为适合与谐振隧道二极管集成的晶体管结构，制造了垂直肖特基源极/漏极 p-MOSFET。沟道宽度8nm、沟道长度50nm的器件在室温下实现了晶体管动作。通过这些结果，我们相信高功能量子效应基本元件的制造工艺和基本操作。在硅衬底上建立的器件及其集成电路较少。