A Study of High-Functional Material System for Opto-Electronic Integrated Devices with Metal/Insulator Heterostructure Superlattices

金属/绝缘体异质结构超晶格光电集成器件高性能材料体系研究

基本信息

批准号：
11555084
负责人：
ASADA Masahiro
金额：
$ 8.26万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

项目摘要

This project aimed at constructing high-functional integrated circuits composed of electron devices, optical devices, and opto-electronic devices utilizing metal/insulator/semiconductor superlattices on silicon substrates. In order to realize such integrated circuits, we achieved well controlled epitaxial growth of CaF_2/CdF_2 and Si/CaF_2 superlattices which are suitable for high-functional devices due to their very high band offsets resulting in remarkable quantum effects. We then fabricated resonant tunneling devices with these superlattices, and ultra-short channel Schottky source/drain MOSFETs to be integrated with the resonant tunneling devices.For the epitaxial growth and its application to resonant tunneling devices, we established the growth condition by using ionized beam epitaxial technique, and obtained resonant tunneling diodes with the peak-to-valley ratio of the negative differential resistance as high as 10^5. The crystalline quality of the epitaxial layers were further … More improved by a selective growth into windows with a few hundred nanometer size made on silicon substrate by SiO_2 masks. By this method resonant tunneling diodes with high uniformity, reproducibility, and large peak-to-valley ratio were obtained at room temperature.Ultra-short channel MOSFETs with Schottky sources and drains were fabricated with PtSi for p-type and ErSi_2 for n-type devices. Room-temperature operation of the devices with the channel length as short as 25nm was achieved. On/off ratio was shown to be increased by the use of SOI substrates with the thin silicon layers. As a transistor structure suitable for integration with the resonant tunneling diodes, vertical Schottky source/drain p-MOSFETs were fabricated, and transistor action was achieved at room temperature for the devices with channel width 8nm and channel length 50nm. By these results, we believe that fabrication process and fundamental operation of the basic elements for high-functional quantum-effect devices and their integrated circuits on silicon substrates were established. Less

该项目旨在构建由电子设备，光学设备和光电设备组成的高功能集成电路，利用金属/绝缘体/半导体超级晶格在硅底物上。为了实现这种集成的电路，我们实现了CAF_2/CDF_2和SI/CAF_2超级晶格的良好控制的外延生长，由于其非常高的频带偏移，它们适用于高功能设备，从而产生了显着的量子效应。 We then fabricated resonant tunneling devices with these superlattices, and ultra-short channel Schottky source/drain MOSFETs to be integrated with the resonant tunneling devices.For the epitaxial growth and its application to resonant tunneling devices, we established the growth condition by using ionized beam epitaxial technique, and obtained resonant tunneling diodes with the peak-to-valley ratio of the negative differential resistance高达10^5。外延层的结晶质量进一步……通过SIO_2口罩在硅底物上制造的几百个纳米尺寸的窗户的选择性增长更加改善。通过这种方法，在室温下获得了具有高均匀性，可重复性的谐振隧道演讲，并且在室温下获得了具有schottky源的欧拉河偏 - 短通道MOSFET，并用PTSI用于P-Type和ERSI_2的PTSI，用于N型Depices。通道长度短至25nm的设备的室温操作已实现。通过使用薄硅层的SOI底物，表明ON/OFF比率可以增加。作为适合与谐振隧道二极管集成的晶体管结构，制造了垂直的Schottky源/排水p-mosfets，并在室温下在室温下，通道宽度为8nm和通道长度为50nm的设备可实现晶体管动作。通过这些结果，我们认为建立了高功能量子效应设备的基本要素的制造过程和基本操作，并建立了它们在硅底物上的集成电路。较少的