Fundamental Research for Three-Terminal Amplifier Device in the Terahertz Range Using Photon-Assisted Tunneling

利用光子辅助隧道效应的太赫兹三端放大器装置的基础研究

基本信息

批准号：
09450139
负责人：
ASADA Masahiro
金额：
$ 7.87万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450139/
关键词：
Terahertz Device Metal Insulator Super lattice Cobalt silicide Calcium Fluoride Ionized-Beam Epitaxy Resonant Tunneling Structure Photon-Assisted Tunneling Planar Patch Antenna テラヘルツ検波テラヘルツ用平面パッチアンテナ電子波ビート絶緑体多層構造 GalnAs lnAl

项目摘要

This project was performed aiming at realization of a new three-terminal device which we proposed for an amplifier in the terahertz range. The device is based on a combination of photon-assisted tunneling and beating of electron waves in metal/insulator multilayer structures. As a fundamental research on this device, (i)establishment of the fabrication process for a small planar antenna with a ultrafine resonant tunneling structure as the input part of the device, and (ii)observation of the photon-assisted tunneling were done.Ultrafine resonant tunneling diodes with metal (CoSi_2) and insulator (CaF_2) were fabricated using our original ionized-beam epitaxy and electron-beam lithography. The characteristics with negative differential resistance were obtained at room temperature with the peak-to-valley ratio of 2.8. An integration of this diode with a high-directivity planar patch antenna was proposed. Properties of this antenna was measured using a SiO_2 single-barrier diode for the te … More rahertz detection, and it was shown that the antenna can provide the device with induced voltage enough for the observation of photon-assisted tunneling.The photon-assisted tunneling was observed in the terahertz detection properties of ultrafine GaInAs/InAlAs triple-barrier resonant tunneling diodes integrated with planar patch antennas. It was also found from the frequency dependence that the terahertz detection of the diodes is in an intermediate situation between the classical square-law detection and the pure photon-assisted tunneling. From this result, it could be recognized that the proposed device is a new type including in its operation both the electron transit as a transistor and the electron transition as a laser. The amplitude of the propagating charge wave generated from the beating of tunneling electron wave, which is the other principle of the device, was also estimated to be large enough for amplification. Consequently, it was concluded that the realization of the proposed device will be possible by an optimized design of the input/output structures. Less

该项目是在重新辅助调谐和金属/绝缘体多层结构中的电子波的结合下实现的，（i）建立具有小平面天线的制造过程的基础研究。作为设备的输入部分，（ii）使用金属（COSI_2）的紫trafine谐振隧道（CAF_2）进行了观察在室温下获得负差分，峰值与谷化的比率为2.8。在Terahertz的检测性能中观察到具有光子辅助的隧穿的设备，以观察到与平面贴片天线的Terahertz检测性能可以确定所提出的设备是新型的，包括IS运行，电子晶体管和电子过渡均为该设备的隧穿电子原理产生的传播电荷波。。