Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves

开发太赫兹波实现大容量无线通信的设备和系统

• 批准号: 21226010
• 负责人: ASADA Masahiro
• 金额: $ 136.53万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009-05-11 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21226010/
• 关键词: 電子デバイス・集積回路; テラヘルツデバイス; 大容量無線通信; 共鳴トンネルダイオード; 微細スロットアンテナ; テラヘルツ波の変調; テラヘルツ波; テラヘルツ発振デバイス; 集積スロットアンテナ; 室温テラヘルツ発振; 直接変調; 周波数変調

Toward realization of high-capacity wireless communications in the undeveloped terahertz frequency region, we investigated oscillation and modulation of terahertz waves, and wireless data transmission. For the oscillation device, we achieved room-temperature oscillation at 1.55 THz using resonant tunneling diodes with reduced electron delay, which is the highest frequency of semiconductor electron devices. High-power oscillation and high-speed direct modulation of these oscillators were achieved with the structure optimization of the integrated micro-antennas. Modulators for terahertz waves with optical signal and transistors with high current drivability for modulation were also obtained. Wireless data transmission was demonstrated with the resonant- tunneling-diode transmitter and Schottky-barrier-diode receiver, and feasibility of high-capacity communication was obtained.

为了实现未开发的Terahertz频率区域中高容量无线通信，我们研究了Terahertz波的振荡和调制，以及无线数据传输。对于振荡装置，我们使用具有减少电子延迟的谐振隧道二极管在1.55 THz时实现了室温振荡，这是半导体电子设备的最高频率。通过综合微型安妮纳斯的结构优化，实现了这些振荡器的高功率振荡和高速直接调制。还获得了具有光学信号的Terahertz波的调节剂和具有高电流驱动性调制的晶体管的调节器。无线数据传输通过谐振 - 隧道 - 二极管发射器和Schottky-Barrier-Diode接收器，并获得了高容量通信的可行性。

项目成果

Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness

• DOI: 10.1007/s10762-014-0058-z
• 发表时间: 2014-02
• 期刊: Journal of Infrared, Millimeter, and Terahertz Waves
• 作者: H. Kanaya;R. Sogabe;T. Maekawa;S. Suzuki;M. Asada

Theoretical analysis of spectral linewidth of terahertz oscillators using resonant tunneling diodes and their coupled arrays

• DOI: 10.1063/1.3460642
• 发表时间: 2010-08-01
• 期刊: JOURNAL OF APPLIED PHYSICS
• 影响因子: 3.2
• 作者: Asada, Masahiro

Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay

具有高铟成分传输层的谐振隧道二极管的基波振荡高达 1.08THz，可减少传输延迟

• DOI: 10.1587/elex.9.385
• 发表时间: 2012
• 期刊: IEICE Electronics Express
• 影响因子: 0.8
• 作者: A.Teranishi;K.Shizuno;S.Suzuki;M.Asada;H.Sugiyama;H. Yokoyama
• 通讯作者: H. Yokoyama

Theoretical analysis of the damping effect on a transistor laser

晶体管激光器阻尼效应的理论分析

• DOI: 10.1587/elex.9.1792
• 发表时间: 2012
• 期刊: IEICE Electronics Express
• 影响因子: 0.8
• 作者: Eiji Iwata;Yuki Ohara;Takafumi Fukushima;Kang-Wook Lee;Mitsumasa Koyanagi;Tetsu Tanaka;M. Shirao
• 通讯作者: M. Shirao

Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires

埋入 SiO2 线的 InP/InGaAs DHBT 的制造

• DOI: 10.1587/transele.e94.c.830
• 发表时间: 2011
• 期刊: IEICE Transactions on Electronics
• 影响因子: 0.5
• 作者: N.Takebe;T.Kobayashi;H.Suzuki;Y.Miyamoto;K.Furuya
• 通讯作者: K.Furuya