Research on Wave Phenomena of Hot Electron at the Insulator Interface and Its Application to Functional Electron Devices
绝缘体界面热电子波动现象研究及其在功能电子器件中的应用
基本信息
- 批准号:07455132
- 负责人:
- 金额:$ 3.84万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1995
- 资助国家:日本
- 起止时间:1995 至 1996
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This research was done aiming at the observation of new quantum-size effect at the interfaces in metal-insulator multilayred heterstructures, which effect can be very little observed in conventional semiconductor heterostructures, and its application to functional electron devices. The results are summarized as follows.Metal (CoSi_2) -insulator (CaF_2) ultrathin multilayred structures were grown on silicon substrate using low-temperature ion-beam epitaxial growth technique for the insulator and the two-step epitaxy of silicon and cobalt for the silicide metal. Using these strucures, a transistor composed of resonant tunneling emitter and electron interferometer was fabricated for the observation of quantum interference at the metal-insulator interface of hot electrons injected into the insulator conduction band. Multiple negative resistance which can be attributed to the interference of hot electrons was observed at the liquid nitrogen temperature. The observed characteristics were in reasonable agreement with theoretical expectation in terms of the voltage interval between the negative differential resistance and also with the circuit simulation results including parasitic elements. It is shown theoretically that the parasitic resistance and leak current considerably degrade the peak-to-valley ratio of the negative differential resistance. In order to suppress the influence of the parasitic resistance, the reduction of the in-plane device size using electron-beam lithography was proposed, and related fabrication process was established. According to this process, a small-size transistor was fabricated and the multiple negative differential resistance was observed at room temperature. For the leak current, which is the other factor degrading the transistor characteristics, several origins and their relation to fabrication process were discussed considering the size dependence of the device characteristics.
这项研究是针对观察新的量子大小效应的金属构造器多层heterstructures中的界面的,在常规半导体异质结构中几乎没有观察到效果,以及其在功能性电子设备中的应用。结果总结如下。Metal(COSI_2) - 绝缘子(CAF_2)超薄多层结构在硅底物上使用低温离子束外延生长技术以及硅硅金属的硅和二氧化合物的两步外观外观和二氧化物的两步性外观外观生长技术生长。使用这些结构,制造了由共振隧穿的发射极和电子干涉仪组成的晶体管,以观察注入绝缘体传导带的热电子的金属胰素界面上的量子干扰。在液氮温度下观察到可归因于热电子干扰的多种负电阻。观察到的特征与理论期望是合理的,就负差分电阻之间的电压间隔以及包括寄生元件在内的电路仿真结果之间的电压间隔而言。从理论上讲,寄生的电阻和泄漏电流大大降低了负差分电阻的峰值与谷化的比率。为了抑制寄生抗性的影响,提出了使用电子束光刻的平面内装置大小的减少,并确定了相关的制造过程。根据此过程,制造了小型晶体管,并在室温下观察到了多个负差分电阻。对于泄漏电流,这是晶体管特征下降的另一个因素,考虑了设备特性的尺寸依赖性,讨论了几个起源及其与制造过程的关系。
项目成果
期刊论文数量(24)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M. Watanabe: "Formation of Silicon and Cobalt Silicide Nanoparticles in CaF_2" Japan. J. Appl. Phys.34. 4380-4383 (1995)
M. Watanabe:“CaF_2 中硅和硅化钴纳米粒子的形成”,日本。
- DOI:
- 发表时间:
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- 影响因子:0
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Wataru SAITOH,et al: "Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon" Japanese Journal of Applied Physics. 35[9A]. L1104-L1106 (1996)
Wataru SAITOH 等人:“采用硅上新型异质结构垂直隧道技术的极短沟道场效应晶体管的建议和分析”日本应用物理学杂志。
- DOI:
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- 影响因子:0
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K. Mori: "Room Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi_2)/Insulator(CaF_2) Quantum Interference Transistor" Physica B. (掲載予定). (1996)
K. Mori:“金属(CoSi_2)/绝缘体(CaF_2)量子干涉晶体管中多个负微分电阻的室温观察”Physica B.(即将出版)。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
Masahiro ASADA: "A Possible Three-Terminal Amplifier Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling" Japanese Journal of Applied Physics. 35[6A]. L685-L687 (1996)
Masahiro ASADA:“使用光子辅助隧道技术的太赫兹频率范围内可能的三端放大器装置”日本应用物理学杂志。
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- 发表时间:
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- 影响因子:0
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Masahiro ASADA: "Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range" IEICE Transaction on Electronics. vol.E79-C. 1537-1542 (1996)
Masahiro ASADA:“太赫兹频率范围内运行的三端光子辅助隧道装置的提议和分析”IEICE Transaction on Electronics。
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- 影响因子:0
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ASADA Masahiro其他文献
Phase Locking and Frequency Tuning of Resonant-Tunneling-Diode Terahertz Oscillators
谐振隧道二极管太赫兹振荡器的锁相和频率调谐
- DOI:
10.1587/transele.e101.c.183 - 发表时间:
2018 - 期刊:
- 影响因子:0.5
- 作者:
OGINO Kota;SUZUKI Safumi;ASADA Masahiro - 通讯作者:
ASADA Masahiro
ASADA Masahiro的其他文献
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{{ truncateString('ASADA Masahiro', 18)}}的其他基金
Analysis of Molecular Mechanisms of Apert Syndorme
阿佩尔综合征的分子机制分析
- 批准号:
21590088 - 财政年份:2009
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves
开发太赫兹波实现大容量无线通信的设备和系统
- 批准号:
21226010 - 财政年份:2009
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (S)
Study of terahertz electron devices with high power in wide frequency range using quantum nanostructures
利用量子纳米结构研究宽频率范围高功率太赫兹电子器件
- 批准号:
18206040 - 财政年份:2006
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
A Fundamental Study of Triode Amplifier Devices in the Optical Range
光范围内三极管放大器器件的基础研究
- 批准号:
13450137 - 财政年份:2001
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
A Study of Metal/Insulator/Semiconductor Super-Heterostructure Material Systems for Multifunctional Electron Devices
多功能电子器件金属/绝缘体/半导体超异质结构材料体系研究
- 批准号:
13555089 - 财政年份:2001
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
A Study of High-Functional Material System for Opto-Electronic Integrated Devices with Metal/Insulator Heterostructure Superlattices
金属/绝缘体异质结构超晶格光电集成器件高性能材料体系研究
- 批准号:
11555084 - 财政年份:1999
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Beating Effect of Traveling Electron Waves bv Terahertz Electromagnetic Wave and Its Application to Ultra-High Speed Three-Terminal Devices
太赫兹电磁波行波电子波的拍频效应及其在超高速三端器件中的应用
- 批准号:
11450136 - 财政年份:1999
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Fundamental Research for Three-Terminal Amplifier Device in the Terahertz Range Using Photon-Assisted Tunneling
利用光子辅助隧道效应的太赫兹三端放大器装置的基础研究
- 批准号:
09450139 - 财政年份:1997
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fundamental Study of Ultra-High Speed Electron Devices with Metal-Insulator Single-Crystalline Ultra-Thin Layrs
金属-绝缘体单晶超薄层超高速电子器件的基础研究
- 批准号:
03452179 - 财政年份:1991
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Research of Ultra-High-Speed Optical Devices Using Multi Dimensional Quantum-Well Structure
多维量子阱结构超高速光器件研究
- 批准号:
63850059 - 财政年份:1988
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B).
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Understanding of growth mechanism of cobalt silicide thin films bysputtering method and its application for electron devices.
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Grant-in-Aid for Scientific Research (B)
THE METHODS TO AVOID THE FORMATION OF METALLIC SILICIDE AT THE INTERFACE OF METAL/SILICON NITRIDE, AND THEIR APPLICATION FOR JOININGS
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03650562 - 财政年份:1991
- 资助金额:
$ 3.84万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)