Research on Wave Phenomena of Hot Electron at the Insulator Interface and Its Application to Functional Electron Devices

绝缘体界面热电子波动现象研究及其在功能电子器件中的应用

基本信息

批准号：
07455132
负责人：
ASADA Masahiro
金额：
$ 3.84万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

This research was done aiming at the observation of new quantum-size effect at the interfaces in metal-insulator multilayred heterstructures, which effect can be very little observed in conventional semiconductor heterostructures, and its application to functional electron devices. The results are summarized as follows.Metal (CoSi_2) -insulator (CaF_2) ultrathin multilayred structures were grown on silicon substrate using low-temperature ion-beam epitaxial growth technique for the insulator and the two-step epitaxy of silicon and cobalt for the silicide metal. Using these strucures, a transistor composed of resonant tunneling emitter and electron interferometer was fabricated for the observation of quantum interference at the metal-insulator interface of hot electrons injected into the insulator conduction band. Multiple negative resistance which can be attributed to the interference of hot electrons was observed at the liquid nitrogen temperature. The observed characteristics were in reasonable agreement with theoretical expectation in terms of the voltage interval between the negative differential resistance and also with the circuit simulation results including parasitic elements. It is shown theoretically that the parasitic resistance and leak current considerably degrade the peak-to-valley ratio of the negative differential resistance. In order to suppress the influence of the parasitic resistance, the reduction of the in-plane device size using electron-beam lithography was proposed, and related fabrication process was established. According to this process, a small-size transistor was fabricated and the multiple negative differential resistance was observed at room temperature. For the leak current, which is the other factor degrading the transistor characteristics, several origins and their relation to fabrication process were discussed considering the size dependence of the device characteristics.

本研究旨在观察金属-绝缘体多层异质结构界面处传统半导体异质结构中很少观察到的新量子尺寸效应，及其在功能电子器件中的应用。主要研究结果如下：绝缘体采用低温离子束外延生长技术，硅化物采用硅钴两步外延技术，在硅衬底上生长了金属(CoSi_2)-绝缘体(CaF_2)超薄多层结构。金属。利用这些结构，制作了由谐振隧道发射极和电子干涉仪组成的晶体管，用于观察注入绝缘体导带的热电子在金属-绝缘体界面处的量子干涉。在液氮温度下观察到可归因于热电子干扰的多重负电阻。观察到的特性与负微分电阻之间的电压间隔方面的理论预期以及包括寄生元件的电路仿真结果相当一致。理论上表明，寄生电阻和漏电流会显着降低负微分电阻的峰谷比。为了抑制寄生电阻的影响，提出了利用电子束光刻来减小面内器件尺寸，并建立了相关的制造工艺。根据该工艺，制作了小尺寸晶体管，并在室温下观察到多个负微分电阻。对于漏电流（这是降低晶体管特性的另一个因素），考虑到器件特性的尺寸依赖性，讨论了漏电流的几个根源及其与制造工艺的关系。