Research of Ultra-High-Speed Optical Devices Using Multi Dimensional Quantum-Well Structure

多维量子阱结构超高速光器件研究

基本信息

批准号：
63850059
负责人：
ASADA Masahiro
金额：
$ 17.79万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B).
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63850059/
关键词：
Multidimensional quantum-well laser Ultra-high-speed optical device GaInAs InP Quantum wire Quantum box Epitaxial Growth Low-damage dry etching GaInAs 多次元量子井戸構造屈折率反射型光スイッチ

项目摘要

Multidimensional quantum-well structures, such as quantum wire and quantum box, are expected to operate with high speed due to their material properties different from conventional bulk crystals. The main purpose of this research is the development of fabrication technique of multidimensional quantum well structures and the application of these structures to devices for ultra-high capacity optical communication. Results obtained are summarized as follows.Optimal device structures were found theoretically for laser and optical switch/modulator with multidimensional quantum well structures by analyzing the structure dependence of the laser threshold and the insertion loss of optical switch/modulator precisely.Lasing action was obtained for the first time at 77K with pulsed current injection in GaInAs/GaInAsP/InP quantum-wire laser with 10nm-thick 30nm-wide wires fabricated by newly developed nanometer fabrication technology viz. Electron beam lithography for pattern writing, wet chemical etching and OMVPE regrowth for embedding process.GaInAs/GaInAsP/InP multi-quantum-film lasers with wire-like active region, Which were fabricated by two step OMVPE growth and wet chemical etching, operated at room temperature for the first time, An increase in the threshold current density in such lasers was drastically reduced by using a preheating process in hydrogen atmosphere and a thin InP covering layer growth prior to the regrowth of a GaInAsP optical confinement layer.A GaInAsP/InP quantum wire structure was fabricated by using a high vacuum electron-cyclotron-resonance reactive-ion-beam-etching system with very low acceleration voltage. Large refractive index variation (-4%) and low optical absorption under electric field application was observed in this structuure. This result indicates that multidimensional quantum well structures are suitable for high performance optical switches/modulators.

多维量子阱结构，如量子线和量子盒，由于其材料特性不同于传统的块状晶体，有望实现高速运行。本研究的主要目的是发展多维量子阱结构的制造技术以及这些结构在超高容量光通信器件中的应用。所得结果总结如下：通过精确分析激光阈值和光开关/调制器插入损耗的结构依赖性，从理论上找到了具有多维量子阱结构的激光器和光开关/调制器的最佳器件结构。首次在 77K 温度下在 GaInAs/GaInAsP/InP 量子线激光器中进行脉冲电流注入，采用新开发的纳米制造技术即 10nm 厚、30nm 宽的线制造。用于图案写入的电子束光刻、湿法化学蚀刻和用于嵌入过程的 OMVPE 再生长。具有线状有源区的 GaInAs/GaInAsP/InP 多量子薄膜激光器，通过两步 OMVPE 生长和湿法化学蚀刻制造，操作温度首次在室温下，通过在氢气氛中使用预热工艺和在激光器之前生长薄的 InP 覆盖层，大大降低了此类激光器中阈值电流密度的增加。采用极低加速电压的高真空电子回旋共振反应离子束刻蚀系统制备了GaInAsP/InP量子线结构。在该结构中观察到在电场施加下大的折射率变化（-4%）和低的光吸收。该结果表明多维量子阱结构适合高性能光开关/调制器。