STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVICES

超薄膜/超细结构器件的研究

基本信息

批准号：
10044138
负责人：
ODA Shunri
金额：
$ 5.31万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10044138/
关键词：
Untrahigh Speed Devices Superconducting Devices Nanofabrications Electron Beam Lithography Thinfilm Crystal Growth Quantum Effect Devices Atomic Layer Epitaxy Single Electron Transistors 量子効果デバイス

项目摘要

1. Nanocrystalline silicon with diameter 8nm has been prepared by pulsed plasma processes. Nanotransistor with a 15nm-gap fabricated by EB lithography and vertical transistor having wrap-around gate were employed for transport measurement of nc-Si. Single electron tunneling characteristics were obtained.2. Atomic layer epitaxy of Si and Ge on Si and Ge substrates were investigated. Process windows doe monoatomic layer growth with self-limiting growth mechanism were found through the study of thermal decomposition and adsorption characteristics of precursors.3. A new fabrication method of source/drain contact of InSb ultrahigh speed MISFET was investigated based on adsorption of sulphur and photo irradiated annealing.4. Ion implantation was applied YBCO superconductors to form Josephson junctions. Focused ion beam tuning of in-plane vibrating micromechanical resonators was developed. FIB process was also employed for the fabrication of optical fiber connectors made from silicon nitride microclips.5. Work on diamond like carbons has expanded for nanolithographic applications. Structure, electric properties and optical properties of tetrahedrally-bonded amorphous carbon were investigated.6. Fluctuations of Coulomb-blockade peak positions of a silicon quantum dot were investigated.7. International workshop on future nanoscale electron devices were held in Berlin and in Tokyo.

1。纳米晶体硅具有直径8nm的硅，是通过脉冲血浆过程制备的。用EB光刻制造的15nm腔和具有包裹式隔离门的垂直晶体管制造的纳米递质用于NC-SI的运输测量。获得了单电子隧道特性。2。研究了SI和GE在Si和GE底物上的原子层外延。通过研究前体的热分解和吸附特征，可以发现窗户窗户的单原子层生长，并具有自限制生长机制。3。基于硫和照片照射的退火，研究了一种新的INSB超高速度失误源/排水接触的方法。4。将离子植入用于YBCO超导体形成约瑟夫森连接。开发了平面振动微力谐振器的聚焦离子束调节。 FIB工艺还用于制造由氮化硅微胶合物制成的光纤连接器5。像碳这样的钻石上的工作已扩展为纳米笔迹应用。研究了四面体键的无定形碳的结构，电性能和光学性质。6。研究了硅量子点的库仑阻滞峰位置的波动。7。关于未来纳米级电子设备的国际研讨会在柏林和东京举行。