Single Electron Devices Based on NeoSilicon Materials

基于新硅材料的单电子器件

基本信息

批准号：
11355014
负责人：
ODA Shunri
金额：
$ 23.12万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11355014/
关键词：
nanocrystalline silicon pulsed plasma processing interface nano-technology single electron tunneling single electron memory ballistic transport surface electron emitter

项目摘要

A novel man-made material, NeoSilicon, is proposed. In NeoSilicon, both particle size and interparticle distance of nanocrystalline silicon quantum dots are precisely controlled. New functions in electron transport, photon emission and electron emission are expected due to quantum effect at room temperature and large interaction between dots. The bandgap is determined by the particle size. The conductivity is controlled mainly by tunneling distance. The transport characteristics are also controlled by charge quantization effect.NeoSilicon is expected to be widely applicable to the key devices in electronics, including ultra-large-scale-integrated circuits, thin-film-transistors for liquid crystal displays and solar cells. Moreover, new field in electronics by using single electron devices, light emitting diodes, laser diodes, flat field-emission-devices and quantum cellular automata would be realized by NeoSilicon.In order to implement NeoSilicon, precise control of particle size of 3- … More 5 nm and interparticle distance of 1-2 nm is essential. Using pulsed plasma processes, we have successfully prepared nanocrystalline silicon particles of 8 nm in diameter with size dispersion of 1nm, whose surfaces are covered by naturally formed oxide of 1.5 nm thickness. Major challenges include reduction of particle size by means of variation of pulsed-plasma processing conditions. Direct nitridation would be a promising method for the formation of tunneling barrier, since lower barrier height for nitride allows larger tunneling probability and self-limiting mechanism of nitride formation provides high accuracy control of interparticle distance.Electrical properties of nanocrystalline silicon particles have been investigated by employing nanoscale electrodes, both planar and vertical configurations, prepared by electron-beam lithography. Coulomb blockade and Coulomb oscillations predominantly due to a single quantum dot are readily modeled as well as interactions of electrons between neighboring dots. Less

提出了一种新型人造材料NeoSilicon，在NeoSilicon中，纳米晶硅量子点的颗粒尺寸和颗粒间距离都受到精确控制，由于室温下的量子效应，有望在电子传输、光子发射和电子发射方面发挥新的功能。点之间的大相互作用由颗粒尺寸决定，传输特性也由电荷量子化效应控制。广泛应用于电子学的关键器件，包括超大规模集成电路、液晶显示器的薄膜晶体管和太阳能电池，以及利用单电子器件、发光二极管、激光器等电子学的新领域。二极管、平场发射器件和量子细胞自动机将由 NeoSilicon 实现。为了实现 NeoSilicon，精确控制 3-… 更多 5 nm 的颗粒尺寸和使用脉冲等离子体工艺，我们成功制备了直径为 8 nm、尺寸分散为 1 nm 的纳米晶硅颗粒，其表面被自然形成的厚度为 1.5 nm 的氧化物覆盖。主要挑战包括减小颗粒尺寸。通过改变脉冲等离子体处理条件，直接氮化将是形成隧道势垒的一种有前途的方法，因为氮化物的势垒高度较低，可以实现更大的隧道概率和自限制机制。氮化物的形成提供了对粒子间距离的高精度控制。通过使用通过电子束光刻技术制备的平面和垂直配置的纳米级电极，研究了纳米晶硅粒子的电学性质，主要是由于单个量子点引起的库仑振荡。易于建模以及相邻点之间的电子相互作用。