Self-assembled integration technologies of silicon quantum dots toward future NeoSilicon quantum information devices

面向未来NeoSilicon量子信息器件的硅量子点自组装集成技术

基本信息

批准号：
16206030
负责人：
ODA Shunri
金额：
$ 32.28万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16206030/
关键词：
Nanocrystalline silicon Nanodots integration Dispersion solution Langmuir-Blodgett (LB) technique Quantum information device Lateral capillary meniscus force Double nc-Si dots charge qubit Charge polarization detection 2重nc-Si量子ドット RF-SE

项目摘要

Nanocrystalline Si dots with a diameter of -8 nm were fabricated by using pulsed gas VHF plasma process and deposited on the substrate. We have successfully prepared the nc-Si dot dispersion solution by immersing the deposited wafer into alcohols with ultra sonic treatment. We then dropped a small volume of the solution onto other substrates and dried it. During the evaporation of alcohols the nc-Si dots were assembled in the solution via the lateral capillary meniscus force. Two-dimensional assembly of the dots was obtained by this method. Furthermore, we developped a new bottom-up technique for high-density assembly of the nc-Si quantum dots based on the Langmuir-Blodgett (LB) technique. We found that the solvent consists of chloroform (CHCl_3) and HMDS ([(CH_3)_3Si]_2NH) was suitable to the LB method for nc-Si. High density assembly of dots was obtained by using the LB method.We examined the assembly of the nc-Si dots on the silicon-on-insulator substrates with nanoscale patterning and succeeded in making the nc-Si dots cluster bridging between the nano-electrodes with a gap of as small as 20 nm. Combining the top-down nanolithography and bottom-up self-assembly may provide a new method to fabricate nanoscale Si structures for the future quantum information device applications. We also tried to integrate of nc-Si quantum dots with the single electron transistor (SET) A resist hole was prepared in the narrow region between the SET island and gate electrodes using the electron beam lithography. After the nc-Si deposition and lift-off processes, we observed that nc-Si QDs contacted directly to the substrate only in the resist hole area. From the equivalent circuit simulation and 3D capacitance analysis, we found that nc-Si QDs help to shift the Coulomb oscillation peak lines effectively and subtle charge polarization can be sensed as their remarkable shift.

采用脉冲气体VHF等离子体工艺制备了直径为-8 nm的纳米晶硅点，并将其沉积在基板上。我们通过将沉积的晶圆浸入酒精中并进行超声波处理，成功制备了 nc-Si 点分散溶液。然后，我们将少量溶液滴到其他基材上并将其干燥。在醇的蒸发过程中，NC-Si 点通过横向毛细管弯月面力在溶液中组装。通过这种方法获得了点的二维组装。此外，我们还基于 Langmuir-Blodgett (LB) 技术开发了一种新的自下而上技术，用于 nc-Si 量子点的高密度组装。我们发现由氯仿(CHCl_3)和HMDS([(CH_3)_3Si]_2NH)组成的溶剂适合NC-Si的LB方法。采用LB方法获得了高密度的点组装。我们通过纳米级图案化研究了绝缘体上硅基板上的NC-Si点的组装，并成功地使NC-Si点簇桥接在纳米电极之间间隙小至20 nm。将自上而下的纳米光刻和自下而上的自组装相结合可能为未来量子信息器件应用提供一种制造纳米级硅结构的新方法。我们还尝试将 nc-Si 量子点与单电子晶体管 (SET) 集成，使用电子束光刻在 SET 岛和栅电极之间的狭窄区域中制备抗蚀剂孔。在 nc-Si 沉积和剥离过程之后，我们观察到 nc-Si QD 仅在抗蚀剂孔区域直接接触衬底。通过等效电路模拟和3D电容分析，我们发现NC-Si QD有助于有效地移动库仑振荡峰值线，并且可以通过其显着的移动来感知微妙的电荷极化。