STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVEICES

超薄膜/超细结构器件的研究

基本信息

批准号：
08044134
负责人：
ODA Shunri
金额：
$ 6.4万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08044134/
关键词：
Ultrahigh Speed Devices Superconducting DEvices Nanofabrications Electron Beam Lighography Ultrathinfilm Crystal Growth Quantum Effect Devices Atomic Layr Epitaxy Thinfilm Transistors

项目摘要

1.Silicon quantum dots with size less than 10nm were prepared by plasma processes. Uniform dot size was obtained based on the idea of the separation of nucleation and crystal growth using pulsed gas methods and understanding of the crystal growth mechanisms. Oxidation of nanocrystalline silicon was also investigated.2.Ultrasmall-gap polisilicon electrodes were fabricated by electron beam lithography and electron cyclotron resonance plasma reactive ion etching methods. 10-20nm gap electrodes were successfully prepared by the two-step exposere method. Single electron transport characteristics were observed in samples with deposited nanocrystalline silicon.3.Ultrathin films of oxide superconductors and insulator heterostructures were prepared by the atomic layr metalorganic chemical vapor deposition method. Reproducibility of thinfilms gabrication was enhanced by using in situ monitoring based on ultrasonic transducers and spectroscopic ellisonetry.4.Superconducting field effect was enhanced by the combination of Josephson junctions and planar type devices.5.Anomolous current voltage characteristics due to intrinsic Josephson junctions were observed in YBCO thinfilm deveices fabricated by scanning probe microscopy lithography.6.Atomic layr epitaxy of silicon on Si (100) was investigated. Self-limiting growth conditions were clarified on the basis of formation of SiHCl due to reaction in the gas phase.

1.尺寸小于10nm的silicon量子点通过血浆过程制备。根据使用脉冲气体方法的成核和晶体生长分离的概念以及对晶体生长机制的理解，获得了均匀的点大小。还研究了纳米晶硅的氧化。2。通过电子束光刻和电子循环共振等离子体等离子反应性离子蚀刻方法制造了粉状质量间隙polisilicon电极。 10-20nm的间隙电极通过两步式exposere方法成功制备。在沉积的纳米晶硅样品中观察到单电子传输特性。3。氧化物超导体的硫酸膜膜和绝缘体异质结构由原子层金属有机化学蒸气沉积法制备。 Reproducibility of thinfilms gabrication was enhanced by using in situ monitoring based on ultrasonic transducers and spectroscopic ellisonetry.4.Superconducting field effect was enhanced by the combination of Josephson junctions and planar type devices.5.Anomolous current voltage characteristics due to intrinsic Josephson junctions were observed in YBCO thinfilm deveices fabricated by scanning探针显微镜光刻。6。研究了硅在Si（100）上的原子外部外观。由于气相中的反应而导致的SIHCL形成，阐明了自限制的生长条件。