Formation of dislocation-free germanium on strain-induced silicon substrate

在应变诱导硅衬底上形成无位错锗

• 批准号: 23656208
• 负责人: ISHIKAWA Yasuhiko
• 金额: $ 2.5万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656208/
• 关键词: 結晶成長; エピタキシャル; 格子欠陥; 電子・電気材料; 半導体物性; ゲルマニウム; シリコン; シリコンフォトニクス; MBE、エピタキシャル; 結晶成長; エピタキシャル; 格子欠陥; 電子・電気材料; 半導体物性; ゲルマニウム; シリコン; シリコンフォトニクス; MBE、エピタキシャル

A method to decrease the dislocation density in Ge grown on Si substrate was examined. Introducing a tensile lattice strain at the Si surface with a stressor of patterned SiN_x film, the lattice mismatch between Ge and Si was reduced, leading to a possible decrease of the dislocation density in Ge. Using a double layer mask of a SiO_2 layer on the SiN_x stressor, a perfect selective growth of Ge was realized on the exposed region of Si surface, although the threading dislocation density was10^9 cm^-2, being similar to those for the growth with SiO_2 masks.

检查了一种降低Si底物上GE中脱位密度的方法。用图案化的SIN_X膜的应力源在Si表面引入拉伸晶格菌株，GE和Si之间的晶格不匹配减少，从而导致GE中的脱位密度可能降低。在SIO_X应力源上使用SIO_2层的双层掩模，在Si表面的暴露区域中实现了GE的完美选择性生长，尽管螺纹位错密度为10^9 cm^-2，与SIO_2蒙版的生长相似。