Study on extremely thin barriers in low-resistivity against Cu interconnect on field oxide layer of SiO_2

SiO_2场氧化层上低阻Cu互连极薄势垒的研究

• 批准号: 12650299
• 负责人: NOYA Atsushi
• 金额: $ 2.3万
• 依托单位: Kitami Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650299/
• 关键词: Integrated Circuits; Interconnects; Barrier; nano-crystal; フィールド酸化膜; Cu; SiO_2; VN; Ta-W

In the interconnecting technology for system-ULSI's in future, extremely thin barriers in low-resistivity acceptable to the 65nm rule were desired for reducing the RC signal delay in the system. We examined the possible barrier materials from the points of view of (1) low-resistive barrier, (2) barrier for Cu[111] preferred orientation and (3) extremely thin barrier in the model system of Cu/barrier/SiO_2/Si. We proposed the use of Ta-W alloy to avoid the high-resistive tetragonal polymorphic phase in Ta, and confirmed the low-resistive barrier on which Cu[111] texture was formed. From this result, Nb as a bcc metal was examined as the barrier on which Cu[111] texture was obtained, and the successful formation of preferentially oriented Cu[111]/Nb[110]/SiO_2/Si system was confirmed. We also applied a nano-crystalline VN film to a barrier as thin as 〜10nm against Cu on SiO_2. The excellent barrier performance without any diffusion of Cu through the thin VN barrier due to annealing at 600℃ for 1h was obtained. Furthermore, the high performance of 〜5nm thick VN barrier was also suggested.

在未来系统ULSI的互连技术中，需要65nm规则可接受的极薄的低电阻率屏障，以减少系统中的RC信号延迟。我们从(1)的角度研究了可能的屏障材料。在Cu/势垒/SiO_2/Si模型系统中，我们提出使用Ta-W合金来避免低电阻势垒、(2)Cu[111]择优取向势垒和(3)极薄势垒。 Ta中的高电阻四方多晶相，并确认了其上形成Cu[111]织构的低电阻势垒根据该结果，研究了作为bcc金属的Nb作为其上获得Cu[111]织构的势垒。 ，并证实了择优取向的Cu[111]/Nb[110]/SiO_2/Si体系的成功形成。我们还将纳米晶VN薄膜用作势垒。 SiO_2上的Cu厚度为〜10nm，由于在600℃退火1h，Cu没有任何扩散，因此获得了优异的阻挡性能。此外，还表明〜5nm厚的VN阻挡层具有高性能。

项目成果

武山, 糸井, 梁田, 佐藤, 野矢: "Cu/SiO_2間の極薄VNバリヤの劣化メカニズム"電子情報通信学会技術研究報告. CPM2003(発表予定). (2003)

Takeyama、Itoi、Yanada、Sato、Noya：“Cu/SiO_2间超薄VN势垒的劣化机理”IEICE技术研究报告（待提交）。

武山, 佐藤, 糸井, 野矢: "Cu配線への極薄ナノクリスタルVNバリヤの適用"第49回応用物理学関係連合講演会講演論文集. (発表予定). (2002)

Takeyama、Sato、Itoi、Noya：“超薄纳米晶体 VN 阻挡层在铜布线中的应用”第 49 届应用物理协会会议论文集（待提交）（2002 年）。

榊,武山,野矢: "Cu/SiO_2間に介在させたTa-W合金薄膜のバリヤ特性"電子情報通信学会技術研究報告. CPM2000-84. 1-6 (2000)

Sakaki，Takeyama，Noya：“Cu/SiO_2之间插入的Ta-W合金薄膜的阻挡性能” IEICE技术研究报告CPM2000-84（2000）。

榊, 武山, 野矢: "Cu/SiO_2間に介在させたTa-W合金膜のバリヤ特性"電子情報通信学会技術研究報告. CPM2000-84. 1-6 (2000)

Sakaki、Takeyama、Noya：“Cu/SiO_2间插入的Ta-W合金薄膜的阻挡性能” IEICE技术研究报告CPM2000-84（2000）。

M.B. Takeyama, K. Satoh, T. Itoi, M. Sakagami, A. Noya: "Failure mechanism of thin VN barrier between Cu and SiO_2"Technical Report of IEICE. CPM2003-00 to be presented. (2003)

M.B.