Preparation of preferentially oriented thin film interconnect on SiOィイD22ィエD2

SiO2D22 上择优取向薄膜互连的制备

• 批准号: 10650300
• 负责人: NOYA Atsushi
• 金额: $ 1.92万
• 依托单位: Kitami Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650300/
• 关键词: LSI; Preferential orientation; interconnect; diffusion barrier; Cu; Nb; V; Ta-W alloy; 集積回路; 高配向薄膜

The Cu interconnect in Si-LSI has been fabricated with a diffusion barrier in the ditch of SiOィイD22ィエD2 by the so-called damascene process. For the Cu interconnect technology, (1) a preferential orientation of Cu (111) plane is desired for suppressing an electromigration failure, and (2) an effective diffusion barrier is also desired as thin as possible. The diffusion barrier materials, which satisfy these issues, are examined in the present study. Transition metal of Nb or V, which is in the bcc structure, is applied as a diffusion barrier between Cu and SiOィイD22ィエD2. The results show that the preferential orientation of Cu (111) is obtained onto the Nb or V(110) oriented barrier formed on the amorphous SiOィイD22ィエD2 layer. The interconnect system with these barriers is found to be difficult to form the thin barrier due to the diffusion of barrier materials through the Cu layer and the reaction at the barrier/SiOィイD22ィエD2 interface. For the formation of thin barrier, NbN or VN is applied to the diffusion barrier. Thermally stable thin barrier is obtained in the Cu/VN(10 nm)/SiOィイD22ィエD2 system, however, Cu(111) orientation in the system is inferior to that using a Nb or V barrier. The barrier of Ta-W solid solution maintaining a bcc structure is then applied as a barrier in the above-mentioned system. This system configuration realizes the Cu (111) preferential orientation on the Ta-W (110) barrier, and shows an excellent thermal stability suppressing the diffusion and reaction observed in the system with Nb or V barrier even at a barrier of 20 nm thick. We can achieve the formation of thermally stable thin barrier layer between Cu and SiOィイD22ィエD2 by using Ta-W alloy films with a suitable composition.

Si-LSI中的互连已通过所谓的Damascene工艺在SIO D2沟中的扩散屏障。 2）在本研究中，还需要将有效的扩散作为rrier材料（满足这些问题）。 Cu D22在无定形的SIO D22层上形成的NB或V（110）屏障。在Cu/vn（10 nm）O -I D22较高的D2系统中，获得了薄屏障的界面。屏障。在系统中观察到的反应，即使在20 nm厚的屏障中，我们也可以通过使用合适的组成来实现Cu和Sio II D22之间的热稳定屏障层的形成。

项目成果

H. Sakaki, M.B. Takeyama and A. Noya: "Influence of alloy compoasition of Ta-W alloy for the stability of Cu/Ta-W/Si02 structure"The Hokkaido Chapters of the Institutes of Electrical and Information Engineers, Japan. 143 (1999)

H.坂木，M.B.

坂上正和ら: "Cu/V-N/SiO_2/Si構造の拡散・反応挙動" 1998年 秋季応用物理学会講演予稿集. (1998)

Masakazu Sakagami等：“Cu/V-N/SiO_2/Si结构的扩散和反应行为”日本应用物理学会1998年秋季会议论文集（1998）。

榊 他: "Ta-W合金を用いたCu(111)配線"電子情報通信学会技術研究報告. (予定). (2000)

Sakaki 等人：“使用 Ta-W 合金的 Cu(111) 布线”IEICE 技术研究报告（计划）。

榊、武山、野矢: "Cu(111)/Ta-W(110)/SiO^2/Si構造における界面反応"1999秋季応用的物理学会講演会論文集. 718-718 (1999)

Sakaki、Takeyama、Noya：“Cu(111)/Ta-W(110)/SiO^2/Si 结构中的界面反应”日本应用物理学会 1999 年秋季会议记录 718-718 (1999)。

佐藤和美 他: "Cu/VN/SiO_2/Si系におけるNV介在層の膜厚依存性"電気関係学会北海道支部連合大会. (1999)

Kazumi Sato 等：“Cu/VN/SiO_2/Si 系统中 NV 介入层的厚度依赖性”电气相关协会北海道分会 (1999)。