Basic study on the nano-contact formation at the metal/SiGe semiconductor Interface

金属/SiGe半导体界面纳米接触形成的基础研究

基本信息

批准号：
17560276
负责人：
NOYA Atsushi
金额：
$ 2.43万
依托单位：
Kitami Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560276/
关键词：
nano-contact NISI NISIGe uniform solid-phase reaction コンタクト界面 SIGe Niシリサイド均一シリサイド SiGe

项目摘要

MOS devices in ultra-large-scaled integrated systems are continuously scaled-down, resulting in a speed-up device by decreasing the time required for electrons to pass through the channel. In addition to this, if the mobility of electrons passing through the channel is raised, we can obtain more high performance devices. Thus, semiconductor materials with high mobility are the demand for applying to the channel. Strained Si and SiGe are candidates of such materials having higher electron mobility than that of Si. In the devices using these materials, low resistive ohmic contacts are required on the 'source' and 'drain' electrodes. As the basic technology to develop the scaled-down electrode formation, uniform solid-phase reaction to obtain the low-resistive nano-contact is necessary. Thus, we examined the uniform solid-phase reaction of silicidation of Ni on Si and Ni on SiGe by applying Ni with nano-grains. The results revealed that uniform reaction between nano Ni grains and Si results In the formation of NISi phase well stable due to annealing at 700 ℃ for 30 min. On the SiGe substrate, uniform formation of NISIGe almost the same composition as that of substrate is formed by the uniform solid-phase reaction in this study. The obtained results reveals that our proposal is effective for the uniform nano-contact formation. The concluding results will presented in the publications in future.

超大规模集成系统中的MOS器件不断缩小尺寸，通过减少电子通过沟道所需的时间来实现器件的加速。除此之外，如果电子通过沟道的迁移率也提高了。因此，需要具有高迁移率的半导体材料来应用于沟道，而在使用这些材料的器件中，应变Si和SiGe是具有更高电子迁移率的材料的候选。材料，低电阻欧姆接触作为开发缩小电极形成的基础技术，均匀固相反应以获得低电阻纳米接触是必要的。因此，我们研究了均匀固体。通过将 Ni 与纳米颗粒一起施加，Si 上的 Ni 和 SiGe 上的 Ni 硅化物的相反应结果表明，由于 100 ℃ 退火，纳米 Ni 颗粒和 Si 之间的均匀反应导致形成非常稳定的 NISi 相。在SiGe衬底上700 ℃ 30 min，通过均匀固相反应形成了与衬底几乎相同成分的NISIGe，所获得的结果表明我们的建议对于均匀纳米-SiGe是有效的。结论结果将在未来的出版物中公布。