Basic study on the nano-contact formation at the metal/SiGe semiconductor Interface

金属/SiGe半导体界面纳米接触形成的基础研究

• 批准号: 17560276
• 负责人: NOYA Atsushi
• 金额: $ 2.43万
• 依托单位: Kitami Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560276/
• 关键词: nano-contact; NISI; NISIGe; uniform solid-phase reaction; コンタクト界面; SIGe; Niシリサイド; 均一シリサイド; SiGe; nano-contact; NISI; NISIGe; uniform solid-phase reaction; コンタクト界面; SIGe; Niシリサイド; 均一シリサイド; SiGe

MOS devices in ultra-large-scaled integrated systems are continuously scaled-down, resulting in a speed-up device by decreasing the time required for electrons to pass through the channel. In addition to this, if the mobility of electrons passing through the channel is raised, we can obtain more high performance devices. Thus, semiconductor materials with high mobility are the demand for applying to the channel. Strained Si and SiGe are candidates of such materials having higher electron mobility than that of Si. In the devices using these materials, low resistive ohmic contacts are required on the 'source' and 'drain' electrodes. As the basic technology to develop the scaled-down electrode formation, uniform solid-phase reaction to obtain the low-resistive nano-contact is necessary. Thus, we examined the uniform solid-phase reaction of silicidation of Ni on Si and Ni on SiGe by applying Ni with nano-grains. The results revealed that uniform reaction between nano Ni grains and Si results In the formation of NISi phase well stable due to annealing at 700 ℃ for 30 min. On the SiGe substrate, uniform formation of NISIGe almost the same composition as that of substrate is formed by the uniform solid-phase reaction in this study. The obtained results reveals that our proposal is effective for the uniform nano-contact formation. The concluding results will presented in the publications in future.

超大尺度集成系统中的MOS设备连续缩放，从而通过减少电子通过通道所需的时间来加速设备。除此之外，如果提高了通过通道的电子的迁移率，我们可以获得更多的高性能设备。这是迁移率高的半导体材料的需求。 SI和SIGE紧张的是具有比SI高的电子迁移率的候选物。在使用这些材料的设备中，“源”和“排水”电极上需要低抗性欧姆接触。作为开发缩小降低电极形成的基本技术，需要均匀的固相反应以获得低抗性的纳米接触。这是，我们通过将Ni与纳米粒涂在SIGE上的Ni和Ni上的Ni对Ni和Ni的均匀固相反应。结果表明，纳米Ni晶粒与SI之间的均匀反应导致Nisi相的形成稳定，这是由于700℃退火30分钟。在SIGE底物上，Nisige的均匀形成与底物几乎相同的组成是由均匀的固相反应形成的。获得的结果表明，我们的建议对于均匀的纳米接触形成有效。将来的出版物将在出版物中提出结论结果。