Deposition of High Quality Diamond Film on Beam-Irradiated Surface Using ECR Plasma

使用 ECR 等离子体在光束照射表面沉积高质量金刚石薄膜

• 批准号: 62460059
• 负责人: HIRAKI Akio
• 金额: $ 3.65万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-62460059/
• 关键词: Diamond Films; ECR Plasma; Low Pressure Deposition; 半導体; エレクトロルミネッセンス; 核形式の位置制御; ビーム照射; 界面評価; カソードルミネッセンス

Large-area chemical vapour deposition of diamond has become feasible using magneto-microwave plasma. The important point of the deceloped system is to set the electron cyclotron resonance (ECR) condition at the deposition area. The high plasma density necessary for diamond formation can be obtained at the area. Under a pressure of 0.1 Rorr, where ample gyrations occurs, the plasma density has been increased by the effective microwave absorption in a magnetic field higher than ECR cndition, i.e. in the so-called off-resonance mode. In the low pressure diamond has been formed on positively, but not on negatively biased substrates. accelerated ions are not suitable for diamond formations. Aomic carbon or a radical having a simple form, containing one carbon atom, might be a candidate for the acitive species to form diamond from the vapour phase.High quality diamond particles have been selectively formed on SiO_2 dot-patterned Si substrate. To form nuclei at desired sites, such as the edges of SiO_2 dots, Ar beam is used to irradiate obliquely the patterned substrates. After deposition using plasma CVD, diamond particles selectively grow on the edges of SiO_2 dots according to the pattern. This selective growth of diamond have realized polycrstals with the same grain size.

使用磁微波等离子体进行大面积金刚石化学气相沉积已变得可行。开发系统的重点是在沉积区域设置电子回旋共振（ECR）条件。在该区域可以获得金刚石形成所需的高等离子体密度。在 0.1 Rorr 的压力下，发生充分的回转，等离子体密度通过在高于 ECR 条件的磁场中的有效微波吸收而增加，即在所谓的偏共振模式下。在低压中，金刚石已在正偏压基底上形成，但不在负偏压基底上形成。加速离子不适合金刚石地层。原子碳或含有一个碳原子的简单形式的自由基可能是气相形成金刚石的活性物质的候选者。在SiO_2点状图案的Si基底上选择性地形成了高质量的金刚石颗粒。为了在所需位置（例如 SiO_2 点的边缘）形成核，使用 Ar 束倾斜照射图案化基板。使用等离子体CVD沉积后，金刚石颗粒根据图案选择性地生长在SiO_2点的边缘上。金刚石的这种选择性生长实现了具有相同晶粒尺寸的多晶体。

项目成果

Hiroshi KAWARADA;King Sheng MAR;Akio HIRAKI: Jpn.J.APPL.Phys.26. L1032-L1034 (1987)

Hiroshi KAWARADA；King Shen MAR；Akio HIRAKI：Jpn.J.APPL.Phys.26。

川原田洋,西村一仁,馬京昇,平木昭夫: "第4章II 電子顕微鏡法およびカソードルミネッセンスによるダイヤモンド薄膜の評価「人造ダイヤモンド技術ハンドブック」" サイエンス・フォーラム, 232-242 (1989)

Hiroshi Kawarada、Kazuhito Nishimura、Noboru Bakyo 和 Akio Hiraki：《第 4 章 II 电子显微镜和阴极发光对金刚石薄膜的评估》《人造金刚石技术手册》科学论坛，232-242 (1989)

H.,kawarada;K.,Nishimura;T.,Ito;J.,Suzuki;K.,Mar;Y.,Yokota;A.,Hiraki: Jpn.J.Appl.Phys.27. L683-L686 (1988)

H.，河田；K.，西村；T.，伊藤；J.，铃木；K.，Mar；Y.，横田；A.，Hiraki：Jpn.J.Appl.Phys.27。

Hiroshi,Kawarada;King-Sheng,Mar;Jun-ichi,Suzuki;Toshimichi,Ito;Hirotaro,Mori;Hiroshi,Fujita;Akio,Hiraki: Jpn.J.Appl.Phys.26. L1903-1906 (1987)

Hiroshi，Kawarada；King-Sheng，Mar；Jun-ichi，Suzuki；Toshimichi，Ito；Hirotoro，Mori；Hiroshi，Fujita；Akio，Hiraki：Jpn.J.Appl.Phys.26。

H.Kawarada; K.Nishimura; T.Ito; J.Suzuki; K.Mar; Y.Yokota; A.Hiraki: "Blue and Green Cathodoluminescence of Diamond Films Formed by Plasma-Assisted Chemical Vapour Deposition" Jpn. J. Appl. Phys.27. 683-686 (1988)

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