Application ot blue light-emeitting diods of zns films unsing new epitaxial growth methof

蓝光发光二极管在ZnS薄膜中的应用开创外延生长新方法

• 批准号: 61850004
• 负责人: HIRAKI Akio
• 金额: $ 4.22万
• 依托单位: oSaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61850004/
• 关键词: MOCVD; ZnS青色LED; ドナー; アクセプター; XnS:I膜; ヨウ素添加ZnS; 青色発光ダイオード

We have developed a new epitaxial gorwth system of metalorganic chemical-bopur-deposition (MOCVD) for the prepatation of Zns thin films with either high-resistivity (above 10 ohn.cm) ot low-resistivity ( below 10 och.cm) at room temprature by doping I. This system supplies dimethlzine (DMZn) diluted in He and H_2 S gases at low pressure of about 0.3 Torr as source mateerials. The obtained Zns films with and withoutr Im impurity were characterised by the Hall ecect and photoluminescence measutements The two types of blue light-emitting diodes have been fabricated;(1) Ht MOCVD Zns fdilms as an insulator larte.Am MIS structure consisting of Au- nMOCVD layer-n-bulk Zns:I crystal was fabvricted under a forward bias condition, the luminesecnce emission band around 2.7 ev at foom remperature apperst and is external qugntum eficincey was estimated to be about 0.1 %, when the insulator layer thixkenss was 500 A. wtith decreasign the thickness, the effieciency was slightly improved.(ii) the MOCVD insullator andl low-resistivity active Zns:I MOVCD layedLow-resistrivity Znd.: I films orto (100) GaSa substrtes were obtaind using HI gas at 300 ゜C. This leyer exnibited a strong blue enission band in the vivinity of 2.65 ev. As same as (i), by depositing the insulator layer of the MOVCD Zns onto low-resistrivity ZnS:I films, the MIS diode was fabricated and exhibited ble emission under a forward bias condition at room remperature.

我们已经开发了一种新的金属有机 - 玻璃沉积（MOCVD）的新型外延，用于在掺杂剂量（10 ohn.cm）ot低耐药性（低于10 och.cm）的Zns thins thins thins thins thins thins thins thins thins thins thins thins thins thins thins thins thins thins thins thins thins tin I.这种供应在HE和H_2 S稀释的Dimethlzine（DMZN），在低含量为0.3托雷斯的源材料下，获得了Zns fithoutr im杂质。已经制造了； -n -bulk Zns：i Crystal在向前的偏置条件下，luminesecnce发射带约为2.7 ev foom remperst，估计约0.1％NSS为500 A.略有改进。约束性ZNS：我在房间恢复处拍摄了前向偏置条件。

项目成果

T.tAcushi, As. Sawada and A. Hiraki: "Excitonic and adge emissions in MOCVD homoepixatizlly-grown zns crtstalline films" Journal of Leectiocal Society. (1988)

T.tAcushi，As。

沢田昭弘,川上養一,川津善平,栗巣賢一,田口常正,平林昭夫: 電子情報通信学会技術研究報告. 86. 65-71 (1987)

Akihiro Sawada、Yoichi Kawakami、Zenpei Kawazu、Kenichi Kurisu、Tsunemasa Taguchi、Akio Hirabayashi：IEICE 技术研究报告。86. 65-71 (1987)。

Y.Kawakami;T.Taguchi;and A.Hiraki: Jourral of Vacvvm Science and Technology. B5. 1171-1178 (1987)

Y.Kawakami；T.Taguchi；和 A.Hiraki：《Vacvvm 科学与技术杂志》。

Y.Kawakami;A.Sawada;K.Kurisu;Z.Kawazu;T.Taguchi and A.Hiraki: Journal of Luminescesns. (1988)

Y.Kawakami；A.Sawada；K.Kurisu；Z.Kawazu；T.Taguchi 和 A.Hiraki：发光杂志。

T.Taguchi: "Japan Annual Reviews in Electronics,Computers & Telecommunications,Semiconductor Technologies,ZnS blue light-emitting diode" OHM,North-Holland, 15 (1986)

T.Taguchi：“日本电子、计算机年度评论