Fabrication of High-Power Blue Emission Diveces Using Chemical Vapor Deposition Diamond
使用化学气相沉积金刚石制造高功率蓝色发射钻石
基本信息
- 批准号:63850008
- 负责人:
- 金额:$ 12.67万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Developmental Scientific Research (B).
- 财政年份:1988
- 资助国家:日本
- 起止时间:1988 至 1990
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
High quality diamond films have been fabricated by employing a magneto-activated plasma chemical vapor deposition system (ECR Plasma CVD system) and a conventional plasma CVD system. Studies on emission centers, emission mechanism of the CVD diamond films, which are undoped, B- or N-doped, irradiated by electron or neutron, annealed, have been carried out using cathodolumionescence (CL).A variety of CL depending on crystal perfection, impurities and defects such as vacancies and interstials have been observed. Undoped CVD diamond has an emission peak at blue region (2.8-2.9eV) in its CL spectra, the same as that obtained from natural IIa diamond. From the particles of 4-5mum in size, the free exciton recombination radiation equivalent to that of natural IIb diamond has been observed. It indicates extremely high crystallinity and purity of CVD diamonds formed by plasma CVD. The recombination radiation of bound excitons due to nuetral acceptors has been observed in boron-doped CVD diamon … More ds. The luminescence intensity increases as the amount of boron in diamonds increases. The emissions from color centers are prominent after the high-energy electron or thermal neutron irradiation and subsequent annealing. The 5RL center (the zero-phonon line at 4.58eV) originated from intrinsic defects has been observed prominently in undoped CVD diamonds. In nitrogen-doped diamonds, the 3.19eV center due to nitrogen-vacancy complex has appeared after the annealing subsequent to the electron irradiation. Moreover, from the CL imaging, the intrinsic luminescence such as free exciton recombination radiation is found to be located in [100] sectors and the extrinsic luminescence such as the 2.16eV center is located in [111] sectors.In this work, an electro-luminescence has been observed, for the first time, from a Schottky diode formed by p-type diamond and Al structure. A well understanding on optical behavior of CVD diamond and a great approach to electro-luminscence devices using of CVD diamond have been contributed in this study Less
高质量的钻石膜HABE是磁激活的等离子体化学蒸气沉积系统(ECR等离子体CVD系统)和常规的等离子体CVD系统。已经使用阴极的完美量,杂质和缺陷(例如空位和intersies),在蓝色区域(2.8-2.9ev)中,与自然相同IAMOND。已经观察到与天然IIB钻石的辐射相等,它表明在硼掺杂的CVD diamon中,观察到了血浆CVD的CVD钻石的纯度和纯度。钻石中的硼量增加。 。扇区和外部发光(例如2.16EV中央)位于[111]扇区中。在这项工作中,已经观察到电致发光或第一次是从p型钻石形成的Schottky二极管和Al结构的井结构。了解CVD钻石的光学行为和使用钻石的电渗透剂的方法的理解,这项研究较少
项目成果
期刊论文数量(39)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H.Kawaraka,Y.Yokota,T.Sogi,H.Matusyawa and A.Hiraki: "Cathodo Luminescence of Exciton Recombinations and Vibronic Color Centers in Undoped,Boronーcloped CVD Diamonds." SPIEーDiamond Optics. 1325. 152-159 (1990)
H.Kawaraka、Y.Yokota、T.Sogi、H.Matusyawa 和 A.Hiraki:“未掺杂硼掺杂 CVD 钻石中的激子重组和振动色心的阴极发光。”1325。 (1990)
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H. Kawarada, Y. Yokota, T. Sogi, H. Matusyama and A. Hiraki: "Cathodoluminescence of Exciton Recombination and Vibronic Color Centers in Undoped and Boron-Doped CVD Diamonds" SPIE-Diamond Optics. 1325. 152-159 (1990)
H. Kawarada、Y. Yokota、T. Sogi、H. Matusyama 和 A. Hiraki:“未掺杂和掺硼 CVD 钻石中激子复合和振动色心的阴极发光”SPIE-金刚石光学。
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- 影响因子:0
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H.Kawarada,Y.Yokota,and A.Hiraki: "Intrinsic and Extrinsic Recombination Radiation from Undoped and Boronーdoped Diamonds Formed by Plasma Chemical Vapor Depostion" Applied Physics Letters.57. 1889-1891 (1990)
H. Kawarada、Y. Yokota 和 A. Hiraki:“等离子体化学气相沉积形成的未掺杂和硼掺杂钻石的内在和外在复合辐射”《应用物理快报》,1889-1891 年(1990 年)。
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Y.Yokota,H.Kawarada,J.S.Ma,K.Nishimura and A.Hiraki: "Cathodo Luminescence imaglug of semiconducting diamond formed by plasma CVD" Journal of Crystal Growth. 103. 65-70 (1990)
Y.Yokota、H.Kawarada、J.S.Ma、K.Nishimura 和 A.Hiraki:“等离子体 CVD 形成的半导体金刚石的阴极发光图像”晶体生长杂志。
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Y.Yokota,H.Kawarada,J.S.Ma,K.Nishimuraand A.Hiraki: "Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD" Journal of Crystal Growth. 103. 65-70 (1990)
Y.Yokota、H.Kawarada、J.S.Ma、K.Nishimura 和 A.Hiraki:“等离子体 CVD 形成的半导体金刚石的阴极发光成像”晶体生长杂志。
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HIRAKI Akio其他文献
HIRAKI Akio的其他文献
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{{ truncateString('HIRAKI Akio', 18)}}的其他基金
Gene-gene and gene-environment interactions between polymorphisms in alcohol-metabolizing enzyme genes and the risk of gastric cancer
酒精代谢酶基因多态性与胃癌风险之间的基因-基因和基因-环境相互作用
- 批准号:
20590624 - 财政年份:2008
- 资助金额:
$ 12.67万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Heteroepitaxial Nucleation and Growth of Diamond
金刚石的异质外延成核与生长
- 批准号:
07044312 - 财政年份:1995
- 资助金额:
$ 12.67万 - 项目类别:
Grant-in-Aid for International Scientific Research.
Development of Diamond Film Synthesis at Room Temperature
室温金刚石薄膜合成研究进展
- 批准号:
05555087 - 财政年份:1993
- 资助金额:
$ 12.67万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Deposition of High Quality Diamond Film on Beam-Irradiated Surface Using ECR Plasma
使用 ECR 等离子体在光束照射表面沉积高质量金刚石薄膜
- 批准号:
62460059 - 财政年份:1987
- 资助金额:
$ 12.67万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Application ot blue light-emeitting diods of zns films unsing new epitaxial growth methof
蓝光发光二极管在ZnS薄膜中的应用开创外延生长新方法
- 批准号:
61850004 - 财政年份:1986
- 资助金额:
$ 12.67万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
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