Heteroepitaxial Nucleation and Growth of Diamond

金刚石的异质外延成核与生长

• 批准号: 07044312
• 负责人: HIRAKI Akio
• 金额: --
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for International Scientific Research.
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 无数据
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07044312/
• 关键词: diamond thin film; heteroepitaxial growth; semiconductor material; electron emitter device; bias enhanced nucleation; nanocrystal seeding; silicon substrate; electrode

Prof. Hiraki and Dr. Hatta visited Korea from Oct. 16 to 21, 1995. They visited ETRI to discuss about the Korean project aiming at flat display panel of diamond. Because some interesting results about electron emission from diamond had been already reported by Hiraki's group in Osaka university, some collaborations were proposed from both country. After that, they moved to Seoul to attend the 3rd IUMRS International Conference in Asia, in which some papers about diamond and its related materials were presented. They went to Inchon city to visit Inha university. Basing on the recent results in Korea and Japan, they discussed with Prof. Lee about their collaboration project in this fiscal year.From March 1 to 5, 1996, Prof. Hiraki, Prof. Ito, Dr. Hatta, and Dr. Mori visited Korea with Prof. Murakami and Prof. Koide of Kyoto university. They visited Cheju National university, where one of the biggest project for diamond electronics device was starting. The researchers in Cheju National University were very interested in the diamond growth at low temperature by ECR plasma CVD method which would be an important technique for their goal of SOD device. After that, they moved to Inchon to visit Inha university for discussion about experimental results obtained in the research project in this fiscal year. Prof. Murakami and Prof. Koide were also invited to have presentations about their recent works on metal electorodes on diamond.In Osaka university, studies on the following topics were carried out ; low temperature synthesis of diamond films with nanocrystal seeding, bias enhanced nucleation by microwave plasma CVD, charactrization of highly oriented diamond films, high speed deposition of diamond at low temperature by pulse modulated plasma, high speed deposition of highly oriented diamond films on silicon by DC arc plasma jet CVD, and nucleation of diamond on silicon over large area by ECR plasma CVD.

Hiraki教授和Hatta博士于1995年10月16日至21日访问了韩国。他们访问了Etri，讨论了针对Diamond平面展示板的韩国项目。由于大阪大学的希拉基小组已经报道了关于钻石电子排放的一些有趣结果，因此两国提出了一些合作。之后，他们搬到首尔参加了亚洲第三届IUMRS国际会议，其中一些有关钻石及其相关材料的论文。他们去了吉贡城去伊哈大学。根据韩国和日本的最新成绩，他们与李教授讨论了他们在本财政年度的合作项目。他们访问了Cheju国立大学，那里是钻石电子设备最大的项目之一。 Cheju国立大学的研究人员对通过ECR血浆CVD方法在低温下的钻石生长非常感兴趣，这将是其SOD设备目标的重要技术。之后，他们搬到Inchon访问Inha大学，讨论本财政年度研究项目中获得的实验结果。穆拉卡米教授和科德教授还被邀请对他们最近在钻石上的金属选举作品进行演讲。在大阪大学，对以下主题进行了研究；低温与纳米晶种子的钻石膜合成，微波血浆CVD的成核增强了成核，高度方向的钻石膜的特征，低温通过脉冲调节等离子体在低温下对钻石的高速沉积，高速度的高速度沉积在高度方向上，由硅质层次上的硅质层次置于硅胶上，并置于硅质层次上，并置于硅质层次上，并置于硅胶层面上。等离子体CVD。

项目成果

H.M.Jeon, C.M.Lee, A.Hatta, T.Ito, T.Sasaki and A.Hiraki: "Diamond nucleation on Si substrate over large area by ECR plasma CVD" Diamond Films and Technol.(submitted).

H.M.Jeon、C.M.Lee、A.Hatta、T.Ito、T.Sasaki 和 A.Hiraki：“通过 ECR 等离子体 CVD 在大面积 Si 衬底上成核”金刚石薄膜和技术（已提交）。

Fabrication of diamond films at low temperature by pulse modulated magnetoactive microwave plasma CVD: "A.Hatta,H.Suzuki,K.Kadota,H.Makita,T.Ito and A.Hiraki" Plasma Sources Sci.and Technol.,. 5(in press). (1996)

通过脉冲调制磁活性微波等离子体 CVD 低温制备金刚石薄膜：“A.Hatta、H.Suzuki、K.Kadota、H.Makita、T.Ito 和 A.Hiraki” Plasma Sources Sci.and Technol.,。