Development of Low-Temperature Epitaxy of Silicon by Photo-Chemical Vapor Deposition

光化学气相沉积硅低温外延技术的进展

• 批准号: 62850053
• 负责人: KONAGAI Makoto
• 金额: $ 3.71万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-62850053/
• 关键词: Photo-Chemical Vapor Deposition; Low-Temperature Epitaxy; Strainde-Layer Superlattices; Si; SiGe; 超高濃度ドーピング

The necessary dimension of an epitaxial layer under typical high-temperature processing conditions are limited by the diffusion length of dopants out of the substrate. Therefore, it has become essential to develop low-temperature silicon epitaxy to reduce further the dimensions of high-performance integrated circuitry.With these backgrounds, the purpose of this research has been developments of low-temperature epitaxy of silicon using photo-chemical vapor deposition technique. Using the photo-CVD technique, the growth temperature could be drastically reduced, because the reactant gases are not decomposed thermally but photochemically. We have obtained following results.1. It was shown that the plasma-etching prior to the growth using SiF_4 gas was very effective to reduce the pileup of impurities as a cleaning method for Si substrates at low-temperature of 250゜c.2. From the experiments, it was found that the presence of SiH_2F_2 and H_2 in the gas phase was essential for the growth of Si epitaxy at this low-temperature.On the basis of these results, we have fabricated both Si/SiGe strained-layer superlattices (SLSS) and heavily P-doped silicon thin films to clarify the merits of photo-assisted chemical vapor deposition.3. The Si/SiGe superlattices were grown by photo-CVD at a very low-temperature of 250゜c. The superlattice structures were directly observed by transmission electron microscopy (TEM) measurements and it seems likely that SLSs could be useful as a buffer layer for silicon epitaxial technology.4. Heavily P-doped silicon films was successfully grown by the photo-CVD technique at 250゜c. The best values of carrier concentration and resistivity were 1.7x10^<21>cm^<-3> and 3.2x10^<-4> cm, respectively.From above mentioned results, it was shown that the photo-chemical vapor deposition technique has been the best candidate for future epitaxial technology of silicon.

在高温处理条件下的必要尺寸层受到HE基板的扩散限制，这是发展低温硅外部的必不可少的。这是使用蒸气沉积技术的硅的发展。低温为250゜c.2的底座是从实验中发现的 - 超级晶格（SLS）和po型硅的固定，澄清了光化学蒸气沉积的优点。3通过透射电子显微镜（TEM）测量直接观察到，SLSS可能像硅外延技术一样像缓冲层一样。4。载体浓度的最佳值为1.7x10^<21> cm^-3>和3.2x10^<-4> Bove心理 - 化学蒸气沉积技术一直是硅的未来外恋技术的最佳候选者。

项目成果

山田明: "American Vacuum Society Series 4" American Institute of Physics, 222-236 (1988)

Akira Yamada：《美国真空学会系列 4》美国物理研究所，222-236 (1988)

永峰邦浩: Japanese Journal of Applied Physics. 26. L951-L953 (1987)

Kunihiro Nagamine：日本应用物理学杂志。26.L951-L953（1987）

小長井誠: Extended Abstract No.424,Electrochemical Society Fall Meeting. 87ー2. 595-596 (1987)

Makoto Konagai：扩展摘要第 424 号，电化学学会秋季会议 87-2（1987）。

a.Yamada; A.Satoh; M.Konagai; K.Takahashi: Low Temperature Silicon Epitaxy by Photo- and Plasma-CVD. American Institute of Physics Conference Proceedings, 222 (1987)

a.山田；

K.Baert; A.Yamada; M.Konagai; K.Takahashi: "Si Epitxial Growth by RF Plasma-CVD at 200-300゜C" Digest of Paper 1988 1st MicroProcess Conference. 124-125 (1988)

K.Baert；A.Yamada；M.Konagai；K.Takahashi：“在 200-300゜C 下进行硅外延生长”1988 年第一届微工艺会议文摘。